| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
|
Wang, Yinglei
|
|
2010
|
54 |
8 |
p. 791-795
5 p.
|
article
|
| 2 |
Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric
|
Basu, Sarbani
|
|
2010
|
54 |
8 |
p. 763-768
6 p.
|
article
|
| 3 |
Al2O3 tunnel barrier as a good candidate for spin injection into silicon
|
Benabderrahmane, R.
|
|
2010
|
54 |
8 |
p. 741-744
4 p.
|
article
|
| 4 |
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
|
Zhang, Lining
|
|
2010
|
54 |
8 |
p. 806-808
3 p.
|
article
|
| 5 |
Direct measurement of electron beam induced currents in p-type silicon
|
Han, Myung-Geun
|
|
2010
|
54 |
8 |
p. 777-780
4 p.
|
article
|
| 6 |
Editorial Board
|
|
|
2010
|
54 |
8 |
p. IFC-
1 p.
|
article
|
| 7 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part II – Dynamic analysis
|
Russo, Salvatore
|
|
2010
|
54 |
8 |
p. 754-762
9 p.
|
article
|
| 8 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I – Static analysis
|
Russo, Salvatore
|
|
2010
|
54 |
8 |
p. 745-753
9 p.
|
article
|
| 9 |
Inhomogeneous injection in polar and nonpolar III-nitride light-emitters
|
Kisin, Mikhail V.
|
|
2010
|
54 |
8 |
p. 801-805
5 p.
|
article
|
| 10 |
Light-emitting diode quality investigation via low-frequency noise characteristics
|
Palenskis, Vilius
|
|
2010
|
54 |
8 |
p. 781-786
6 p.
|
article
|
| 11 |
Statistical modeling of inter-device correlations with BPV
|
Stevanović, Ivica
|
|
2010
|
54 |
8 |
p. 796-800
5 p.
|
article
|
| 12 |
Studies on vacuum deposited p-ZnTe/n-ZnSe heterojunction diodes
|
Rao, Gowrish K.
|
|
2010
|
54 |
8 |
p. 787-790
4 p.
|
article
|
| 13 |
Thermal analysis of short wavelength InGaAs/InAlAs quantum cascade lasers
|
Lee, H.K.
|
|
2010
|
54 |
8 |
p. 769-776
8 p.
|
article
|
Journal description