| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures
|
Deen, D.A.
|
|
2010
|
54 |
6 |
p. 613-615
3 p.
|
article
|
| 2 |
DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT
|
Bawedin, M.
|
|
2010
|
54 |
6 |
p. 616-620
5 p.
|
article
|
| 3 |
Editorial Board
|
|
|
2010
|
54 |
6 |
p. IFC-
1 p.
|
article
|
| 4 |
Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation
|
Veirman, J.
|
|
2010
|
54 |
6 |
p. 671-674
4 p.
|
article
|
| 5 |
Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors
|
Cheng, C.H.
|
|
2010
|
54 |
6 |
p. 646-649
4 p.
|
article
|
| 6 |
Impact of parameter extraction methodology on variances of extracted parameter values
|
Milovanović, Vladimir
|
|
2010
|
54 |
6 |
p. 665-670
6 p.
|
article
|
| 7 |
Limits on vanadium oxide Mott metal–insulator transition field-effect transistors
|
Hormoz, S.
|
|
2010
|
54 |
6 |
p. 654-659
6 p.
|
article
|
| 8 |
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics
|
Alatise, Olayiwola
|
|
2010
|
54 |
6 |
p. 628-634
7 p.
|
article
|
| 9 |
Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates
|
Satter, Md. Mahbub
|
|
2010
|
54 |
6 |
p. 621-627
7 p.
|
article
|
| 10 |
Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage
|
Kambayashi, Hiroshi
|
|
2010
|
54 |
6 |
p. 660-664
5 p.
|
article
|
| 11 |
Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure
|
Ortiz-Conde, A.
|
|
2010
|
54 |
6 |
p. 635-641
7 p.
|
article
|
| 12 |
Temperature influence on photo-leakage-current characteristics of a-Si:H thin-film transistor
|
Tsao, S.W.
|
|
2010
|
54 |
6 |
p. 642-645
4 p.
|
article
|
| 13 |
Tungsten-dual polymetal technology for low resistive gate electrode
|
Kim, Yong Soo
|
|
2010
|
54 |
6 |
p. 650-653
4 p.
|
article
|
Journal description