| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Charge cross talk in sub-lithographically shrinked 32nm Twin Flash™ memory cells
|
Beug, M.F.
|
|
2008
|
52 |
4 |
p. 571-576
6 p.
|
artikel
|
| 2 |
3D nanowire gate-all-around transistors: Specific integration and electrical features
|
Dupré, C.
|
|
2008
|
52 |
4 |
p. 519-525
7 p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
2008
|
52 |
4 |
p. IFC-
1 p.
|
artikel
|
| 4 |
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics
|
Mantegazza, D.
|
|
2008
|
52 |
4 |
p. 584-590
7 p.
|
artikel
|
| 5 |
Foreword
|
Van Houdt, Jan
|
|
2008
|
52 |
4 |
p. 549-
1 p.
|
artikel
|
| 6 |
Foreword
|
Ponomarev, Youri V.
|
|
2008
|
52 |
4 |
p. 488-
1 p.
|
artikel
|
| 7 |
Impact of channel orientation on ballistic current of nDGFETs with alternative channel materials
|
Rafhay, Quentin
|
|
2008
|
52 |
4 |
p. 540-547
8 p.
|
artikel
|
| 8 |
In-depth electrical characterization of sub-45nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack
|
Feruglio, S.
|
|
2008
|
52 |
4 |
p. 489-497
9 p.
|
artikel
|
| 9 |
Mobility in graphene double gate field effect transistors
|
Lemme, M.C.
|
|
2008
|
52 |
4 |
p. 514-518
5 p.
|
artikel
|
| 10 |
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain
|
Braccioli, M.
|
|
2008
|
52 |
4 |
p. 506-513
8 p.
|
artikel
|
| 11 |
Multi-layer high-κ interpoly dielectric for floating gate flash memory devices
|
Zhang, Lu
|
|
2008
|
52 |
4 |
p. 564-570
7 p.
|
artikel
|
| 12 |
Novel concepts for improved communication between nerve cells and silicon electronic devices
|
Huys, Roeland
|
|
2008
|
52 |
4 |
p. 533-539
7 p.
|
artikel
|
| 13 |
On the electron mobility enhancement in biaxially strained Si MOSFETs
|
Driussi, F.
|
|
2008
|
52 |
4 |
p. 498-505
8 p.
|
artikel
|
| 14 |
Performance and reliability of HfAlO x -based interpoly dielectrics for floating-gate Flash memory
|
Govoreanu, B.
|
|
2008
|
52 |
4 |
p. 557-563
7 p.
|
artikel
|
| 15 |
Physical understanding and modeling of SANOS retention in programmed state
|
Furnémont, Arnaud
|
|
2008
|
52 |
4 |
p. 577-583
7 p.
|
artikel
|
| 16 |
Theoretical foundations of the quantum drift-diffusion and density-gradient models
|
Baccarani, Giorgio
|
|
2008
|
52 |
4 |
p. 526-532
7 p.
|
artikel
|
| 17 |
Use of Al2O3 as inter-poly dielectric in a production proven 130nm embedded Flash technology
|
Kakoschke, R.
|
|
2008
|
52 |
4 |
p. 550-556
7 p.
|
artikel
|
| 18 |
Writing current reduction and total set resistance analysis in PRAM
|
Jeong, C.W.
|
|
2008
|
52 |
4 |
p. 591-595
5 p.
|
artikel
|
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