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Journal description
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Details for article 8 of 18 found articles
| Title: |
In-depth electrical characterization of sub-45nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack |
| Author: |
Feruglio, S. Andrieu, F. Faynot, O. Ghibaudo, G. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 52 (2008) nr. 4 pages 9 p. |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 8 of 18 found articles
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