| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
|
de Souza, Michelly
|
|
2008
|
52 |
12 |
p. 1933-1938
6 p.
|
artikel
|
| 2 |
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
|
Pavanello, Marcelo Antonio
|
|
2008
|
52 |
12 |
p. 1904-1909
6 p.
|
artikel
|
| 3 |
Analysis of STI-induced mechanical stress-related Kink effect of 40nm PD SOI NMOS devices biased in saturation region
|
Lin, I.S.
|
|
2008
|
52 |
12 |
p. 1884-1888
5 p.
|
artikel
|
| 4 |
Building ultra-low-power high-temperature digital circuits in standard high-performance SOI technology
|
Bol, David
|
|
2008
|
52 |
12 |
p. 1939-1945
7 p.
|
artikel
|
| 5 |
Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs
|
Moldovan, Oana
|
|
2008
|
52 |
12 |
p. 1867-1871
5 p.
|
artikel
|
| 6 |
Editorial Board
|
|
|
2008
|
52 |
12 |
p. IFC-
1 p.
|
artikel
|
| 7 |
Electron subband structure and controlled valley splitting in silicon thin-body SOI FETs: Two-band k·p theory and beyond
|
Sverdlov, Viktor
|
|
2008
|
52 |
12 |
p. 1861-1866
6 p.
|
artikel
|
| 8 |
Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate
|
Ogura, A.
|
|
2008
|
52 |
12 |
p. 1845-1848
4 p.
|
artikel
|
| 9 |
Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors
|
Ruddell, F.H.
|
|
2008
|
52 |
12 |
p. 1849-1853
5 p.
|
artikel
|
| 10 |
Foreword
|
Lederer, Dimitri
|
|
2008
|
52 |
12 |
p. 1839-
1 p.
|
artikel
|
| 11 |
Germanium on sapphire by wafer bonding
|
Baine, P.T.
|
|
2008
|
52 |
12 |
p. 1840-1844
5 p.
|
artikel
|
| 12 |
High-temperature DC and RF behaviors of partially-depleted SOI MOSFET transistors
|
Emam, Mostafa
|
|
2008
|
52 |
12 |
p. 1924-1932
9 p.
|
artikel
|
| 13 |
How crucial is back gate misalignment/oversize in double gate MOSFETs for ultra-low-voltage analog/rf applications?
|
Kranti, Abhinav
|
|
2008
|
52 |
12 |
p. 1895-1903
9 p.
|
artikel
|
| 14 |
Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs
|
Guo, W.
|
|
2008
|
52 |
12 |
p. 1889-1894
6 p.
|
artikel
|
| 15 |
Modeling the equivalent oxide thickness of Surrounding Gate SOI devices with high-κ insulators
|
Tienda-Luna, I.M.
|
|
2008
|
52 |
12 |
p. 1854-1860
7 p.
|
artikel
|
| 16 |
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations
|
Yan, Ran
|
|
2008
|
52 |
12 |
p. 1872-1876
5 p.
|
artikel
|
| 17 |
Substrate bias and operating temperature effects on the performance of Schottky-barrier SOI nMOSFETs
|
Ka, Dae Hyun
|
|
2008
|
52 |
12 |
p. 1910-1914
5 p.
|
artikel
|
| 18 |
Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology
|
El Kaamouchi, M.
|
|
2008
|
52 |
12 |
p. 1915-1923
9 p.
|
artikel
|
| 19 |
Threshold voltages of SOI MuGFETs
|
de Andrade, Maria Glória Caño
|
|
2008
|
52 |
12 |
p. 1877-1883
7 p.
|
artikel
|
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