| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new analytical model for the energy dispersion in two-dimensional hole inversion layers
|
De Michielis, Marco
|
|
2007
|
51 |
4 |
p. 598-603
6 p.
|
artikel
|
| 2 |
A perspective on today’s scaling challenges and possible future directions
|
Dennard, Robert H.
|
|
2007
|
51 |
4 |
p. 518-525
8 p.
|
artikel
|
| 3 |
Capacitance measurements in nanometric silicon devices using Coulomb blockade
|
Hofheinz, M.
|
|
2007
|
51 |
4 |
p. 560-564
5 p.
|
artikel
|
| 4 |
CMOS 6-T SRAM cell design subject to “atomistic” fluctuations
|
Cheng, B.
|
|
2007
|
51 |
4 |
p. 565-571
7 p.
|
artikel
|
| 5 |
Combined sources of intrinsic parameter fluctuations in sub-25nm generation UTB-SOI MOSFETs: A statistical simulation study
|
Samsudin, K.
|
|
2007
|
51 |
4 |
p. 611-616
6 p.
|
artikel
|
| 6 |
Comparative study of the fabricated and simulated Impact Ionization MOS (IMOS)
|
Mayer, F.
|
|
2007
|
51 |
4 |
p. 579-584
6 p.
|
artikel
|
| 7 |
Device performance and optimization of decananometer long double gate MOSFET by Monte Carlo simulation
|
Bournel, A.
|
|
2007
|
51 |
4 |
p. 543-550
8 p.
|
artikel
|
| 8 |
Device structures and carrier transport properties of advanced CMOS using high mobility channels
|
Takagi, S.
|
|
2007
|
51 |
4 |
p. 526-536
11 p.
|
artikel
|
| 9 |
Editorial Board
|
|
|
2007
|
51 |
4 |
p. IFC-
1 p.
|
artikel
|
| 10 |
Experimental determination of the channel backscattering coefficient on 10–70nm-metal-gate Double-Gate transistors
|
Barral, Vincent
|
|
2007
|
51 |
4 |
p. 537-542
6 p.
|
artikel
|
| 11 |
Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods
|
Rafhay, Quentin
|
|
2007
|
51 |
4 |
p. 585-592
8 p.
|
artikel
|
| 12 |
Foreword
|
Deleonibus, Simon
|
|
2007
|
51 |
4 |
p. 517-
1 p.
|
artikel
|
| 13 |
Impact of fin width on digital and analog performances of n-FinFETs
|
Subramanian, V.
|
|
2007
|
51 |
4 |
p. 551-559
9 p.
|
artikel
|
| 14 |
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
|
Knoch, J.
|
|
2007
|
51 |
4 |
p. 572-578
7 p.
|
artikel
|
| 15 |
Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors
|
Claeys, C.
|
|
2007
|
51 |
4 |
p. 627-632
6 p.
|
artikel
|
| 16 |
Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
|
Echtermeyer, T.
|
|
2007
|
51 |
4 |
p. 617-621
5 p.
|
artikel
|
| 17 |
Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides
|
Contaret, Thierry
|
|
2007
|
51 |
4 |
p. 633-637
5 p.
|
artikel
|
| 18 |
Monte-Carlo analysis of signal propagation delay and AC performance of decananometric bulk and double-gate MOSFETs
|
Barin, N.
|
|
2007
|
51 |
4 |
p. 604-610
7 p.
|
artikel
|
| 19 |
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
|
Engström, O.
|
|
2007
|
51 |
4 |
p. 622-626
5 p.
|
artikel
|
| 20 |
Phonon scattering in Si-based nanodevices
|
Donetti, L.
|
|
2007
|
51 |
4 |
p. 593-597
5 p.
|
artikel
|
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