| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive four parameters I–V model for GaAs MESFET output characteristics
|
Memon, N.M.
|
|
2007
|
51 |
3 |
p. 511-516
6 p.
|
artikel
|
| 2 |
Analytical predictive modeling for the study of the scalability limits of multiple gate MOSFETs
|
Abd El-Hamid, Hamdy
|
|
2007
|
51 |
3 |
p. 414-422
9 p.
|
artikel
|
| 3 |
Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs
|
Jin, Yawei
|
|
2007
|
51 |
3 |
p. 347-353
7 p.
|
artikel
|
| 4 |
A new analytical threshold voltage model for symmetrical double-gate MOSFETs with high-k gate dielectrics
|
Chiang, T.K.
|
|
2007
|
51 |
3 |
p. 387-393
7 p.
|
artikel
|
| 5 |
A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer
|
Luo, Xiaorong
|
|
2007
|
51 |
3 |
p. 493-499
7 p.
|
artikel
|
| 6 |
A novel high voltage LDMOS for HVIC with the multiple step shaped equipotential rings
|
Chen, Wanjun
|
|
2007
|
51 |
3 |
p. 394-397
4 p.
|
artikel
|
| 7 |
A unified circuit model for static and dynamic analyses of semiconductor optical amplifiers and laser diodes
|
Jou, Jau-Ji
|
|
2007
|
51 |
3 |
p. 360-365
6 p.
|
artikel
|
| 8 |
BSIM5: An advanced charge-based MOSFET model for nanoscale VLSI circuit simulation
|
He, Jin
|
|
2007
|
51 |
3 |
p. 433-444
12 p.
|
artikel
|
| 9 |
Color tunable organic light emitting diodes using Eu complex doping
|
Li, W.X.
|
|
2007
|
51 |
3 |
p. 500-504
5 p.
|
artikel
|
| 10 |
Device design guidelines for nano-scale MuGFETs
|
Lee, Chi-Woo
|
|
2007
|
51 |
3 |
p. 505-510
6 p.
|
artikel
|
| 11 |
Dual-channel 4H-SiC metal semiconductor field effect transistors
|
Zhu, C.L.
|
|
2007
|
51 |
3 |
p. 343-346
4 p.
|
artikel
|
| 12 |
Editorial Board
|
|
|
2007
|
51 |
3 |
p. IFC-
1 p.
|
artikel
|
| 13 |
Fabrication and performance of optoelectronic devices with metal/diamond-like carbon Schottky contact
|
Cheng, Xiang
|
|
2007
|
51 |
3 |
p. 423-427
5 p.
|
artikel
|
| 14 |
Impact of graded channel (GC) design in fully depleted cylindrical/surrounding gate MOSFET (FD CGT/SGT) for improved short channel immunity and hot carrier reliability
|
Kaur, Harsupreet
|
|
2007
|
51 |
3 |
p. 398-404
7 p.
|
artikel
|
| 15 |
Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator
|
Seoane, N.
|
|
2007
|
51 |
3 |
p. 481-488
8 p.
|
artikel
|
| 16 |
Influence of traps on charge transport in organic semiconductors
|
Li, Ling
|
|
2007
|
51 |
3 |
p. 445-448
4 p.
|
artikel
|
| 17 |
Integrated RF inductors with micro-patterned NiFe core
|
Zhuang, Y.
|
|
2007
|
51 |
3 |
p. 405-413
9 p.
|
artikel
|
| 18 |
Investigation of source-follower type analog buffer using low temperature poly-Si TFTs
|
Chen, Bo-Ting
|
|
2007
|
51 |
3 |
p. 354-359
6 p.
|
artikel
|
| 19 |
Low resistivity ohmic contact to n-type poly-GaN using a Ti/Au/Ni/Au multilayer metal system
|
Uen, Wu-Yih
|
|
2007
|
51 |
3 |
p. 460-465
6 p.
|
artikel
|
| 20 |
1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39W at 8GHz
|
Wang, X.L.
|
|
2007
|
51 |
3 |
p. 428-432
5 p.
|
artikel
|
| 21 |
Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET
|
Zerounian, N.
|
|
2007
|
51 |
3 |
p. 449-459
11 p.
|
artikel
|
| 22 |
Optimal distance between current collecting electrodes of the solar cells
|
Georgiev, S.S.
|
|
2007
|
51 |
3 |
p. 376-380
5 p.
|
artikel
|
| 23 |
Structural and electrical properties of metal-ferroelectric-insulator–semiconductor transistors using a Pt/Bi3.25Nd0.75Ti3O12/Y2O3/Si structure
|
Tang, Ming Hua
|
|
2007
|
51 |
3 |
p. 371-375
5 p.
|
artikel
|
| 24 |
Surface roughness of silicon oxynitride etching in C2F6 inductively coupled plasma
|
Kim, Byungwhan
|
|
2007
|
51 |
3 |
p. 366-370
5 p.
|
artikel
|
| 25 |
The influence of ohmic back contacts on the properties of a-Si:H Schottky diodes
|
Ay, I.
|
|
2007
|
51 |
3 |
p. 381-386
6 p.
|
artikel
|
| 26 |
Towards a silicon laser based on emissive structural defects
|
Yukhnevich, Anatolii V.
|
|
2007
|
51 |
3 |
p. 489-492
4 p.
|
artikel
|
| 27 |
Transfer matrix method modelling of inhomogeneous Schottky barrier diodes on silicon carbide
|
Furno, M.
|
|
2007
|
51 |
3 |
p. 466-474
9 p.
|
artikel
|
| 28 |
Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current–voltage and capacitance–voltage measurements
|
Sen, Banani
|
|
2007
|
51 |
3 |
p. 475-480
6 p.
|
artikel
|
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