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                                       Details for article 21 of 28 found articles
 
 
  Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET
 
 
Title: Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET
Author: Zerounian, N.
Enciso-Aguilar, M.
Hackbarth, T.
Herzog, H.-J.
Aniel, F.
Appeared in: Solid-state electronics
Paging: Volume 51 (2007) nr. 3 pages 11 p.
Year: 2007
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 21 of 28 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands