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                             49 results found
no title author magazine year volume issue page(s) type
1 A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects Chen, Bae-Horng
 2006
 50 7-8 p. 1341-1348
8 p.
 article
2 Analytical modeling of CMOS circuit delay distribution due to concurrent variations in multiple processes Harish, B.P.
 2006
 50 7-8 p. 1252-1260
9 p.
 article
3 A new analytic approximation to general diode equation He, Jin
 2006
 50 7-8 p. 1371-1374
4 p.
 article
4 A new analytic method to design multiple floating field limiting rings of power devices He, Jin
 2006
 50 7-8 p. 1375-1381
7 p.
 article
5 An explicit analytical charge-based model of undoped independent double gate MOSFET Reyboz, Marina
 2006
 50 7-8 p. 1276-1282
7 p.
 article
6 An explicit surface-potential-based MOSFET model incorporating the quantum mechanical effects Basu, Dipanjan
 2006
 50 7-8 p. 1299-1309
11 p.
 article
7 An improved junction capacitance model for junction field-effect transistors Ding, Hao
 2006
 50 7-8 p. 1395-1399
5 p.
 article
8 An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers Chen, Tianbing
 2006
 50 7-8 p. 1194-1200
7 p.
 article
9 A novel high performance insulated gate bipolar transistor Zhang, Fei
 2006
 50 7-8 p. 1201-1205
5 p.
 article
10 Application of PVD silver for integrated microwave passives in silicon technology Levenets, V.V.
 2006
 50 7-8 p. 1389-1394
6 p.
 article
11 A study on the synthesis from Li2CO3, NiO and Co3O4 and the electrochemical properties of cathode materials LiNi1−y Co y O2 for lithium secondary battery Park, Hye-Ryoung
 2006
 50 7-8 p. 1291-1298
8 p.
 article
12 Band gap widening and narrowing in moderately and heavily doped n-ZnO films Jain, Anubha
 2006
 50 7-8 p. 1420-1424
5 p.
 article
13 Carrier transport mechanisms and photovoltaic properties of Au/p-ZnPc/Al device Aziz, M.S.
 2006
 50 7-8 p. 1238-1243
6 p.
 article
14 C ∞-continuous high-temperature model for low-doped accumulation mode silicon-on-insulator pMOSFETs Houk, Yuri
 2006
 50 7-8 p. 1261-1268
8 p.
 article
15 Charge transport mechanism of Al/Bi2Te3/Al thin film devices Dheepa, J.
 2006
 50 7-8 p. 1315-1319
5 p.
 article
16 Colloidal quantum dot active layers for light emitting diodes Pagan, Jennifer G.
 2006
 50 7-8 p. 1461-1465
5 p.
 article
17 Dependence of low frequency noise in SiGe heterojunction bipolar transistors on the dimensional and structural features of extrinsic regions Ul Hoque, Md Mazhar
 2006
 50 7-8 p. 1430-1439
10 p.
 article
18 Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes Contopanagos, H.
 2006
 50 7-8 p. 1283-1290
8 p.
 article
19 Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology Bindu, B.
 2006
 50 7-8 p. 1359-1367
9 p.
 article
20 Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance–voltage technique Saha, A.R.
 2006
 50 7-8 p. 1269-1275
7 p.
 article
21 Device-partition method using equivalent-circuit model in three-dimensional device simulation Chang, Chia-Cherng
 2006
 50 7-8 p. 1206-1211
6 p.
 article
22 Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction Zhu, Shiyang
 2006
 50 7-8 p. 1337-1340
4 p.
 article
23 Edge termination strategies for a 4kV 4H–SiC thyristor Brosselard, P.
 2006
 50 7-8 p. 1183-1188
6 p.
 article
24 Effect of fabrication process on the charge trapping behavior of SiON thin films Wang, Szu-Yu
 2006
 50 7-8 p. 1171-1174
4 p.
 article
25 Elastic and optical properties of BeS, BeSe and BeTe under pressure Khenata, R.
 2006
 50 7-8 p. 1382-1388
7 p.
 article
26 Electronic properties of Ge nanocrystals for non volatile memory applications Kanoun, M.
 2006
 50 7-8 p. 1310-1314
5 p.
 article
27 Energy band alignment and interface states in AlGaN/4H–SiC vertical heterojunction diodes Johnson, Brian J.
 2006
 50 7-8 p. 1413-1419
7 p.
 article
28 Fabrication and analysis of high-efficiency String Ribbon Si solar cells Nakayashiki, Kenta
 2006
 50 7-8 p. 1406-1412
7 p.
 article
29 Full-swing pentacene organic inverter with enhancement-mode driver and depletion-mode load Lee, Cheon An
 2006
 50 7-8 p. 1216-1218
3 p.
 article
30 Growth and characterization of indium oxide diodes prepared by reactive magnetron sputtering Chen, Lung-Chien
 2006
 50 7-8 p. 1355-1358
4 p.
 article
31 High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime Ivanov, Pavel A.
 2006
 50 7-8 p. 1368-1370
3 p.
 article
32 IFC - Editorial Board 2006
 50 7-8 p. CO2-
1 p.
 article
33 Impact of device scaling on the 1/f noise performance of deep submicrometer thin gate oxide CMOS devices Chew, Kok Wai
 2006
 50 7-8 p. 1219-1226
8 p.
 article
34 Influence of different deposition conditions of top and bottom electrode on the reliability of Sr0.8Bi2.2Ta2O9 ferroelectric capacitors Goux, L.
 2006
 50 7-8 p. 1227-1234
8 p.
 article
35 In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs Droopad, Ravi
 2006
 50 7-8 p. 1175-1177
3 p.
 article
36 Investigation of oxygen annealing effects on RF sputter deposited SiC thin films Todi, R.M.
 2006
 50 7-8 p. 1189-1193
5 p.
 article
37 Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs Chuang, Ricky W.
 2006
 50 7-8 p. 1212-1215
4 p.
 article
38 Low optical power characterization of a base current-biased four-terminal dual-emitter heterojunction phototransistor Chen, W.T.
 2006
 50 7-8 p. 1330-1336
7 p.
 article
39 Microwave dielectric properties of (1− x)(Mg0.95Co0.05)TiO3– xCa0.6La0.8/3TiO3 ceramics with V2O5 addition Huang, Cheng-Liang
 2006
 50 7-8 p. 1349-1354
6 p.
 article
40 Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts Dixit, A.
 2006
 50 7-8 p. 1466-1471
6 p.
 article
41 Modeling and optimization of series resistance of planar MIM capacitors Bajolet, A.
 2006
 50 7-8 p. 1244-1251
8 p.
 article
42 Modeling for reduced gate capacitance of nanoscale MOSFETs Yue-hua, Dai
 2006
 50 7-8 p. 1472-1474
3 p.
 article
43 Modelling of semiconductor diodes made of high defect concentration, irradiated, high resistivity and semi-insulating material: The capacitance–voltage characteristics Saadoune, A.
 2006
 50 7-8 p. 1178-1182
5 p.
 article
44 Physical modeling of degenerately doped compound semiconductors for high-performance HBT design Li, James C.
 2006
 50 7-8 p. 1440-1449
10 p.
 article
45 Rapid and precise calculations of energy and particle flux for detailed-balance photovoltaic applications Levy, Michael Y.
 2006
 50 7-8 p. 1400-1405
6 p.
 article
46 Simple parameter extraction method for illuminated solar cells Chegaar, M.
 2006
 50 7-8 p. 1234-1237
4 p.
 article
47 Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN Vertiatchikh, Alexei
 2006
 50 7-8 p. 1425-1429
5 p.
 article
48 Surface-potential solutions to the Pao–Sah voltage equation Shangguan, W.Z.
 2006
 50 7-8 p. 1320-1329
10 p.
 article
49 Universal MOSFET gate impedance model for 200MHz–20GHz frequency range Bandi, Sri Priya R.
 2006
 50 7-8 p. 1450-1460
11 p.
 article
                             49 results found
 
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