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                                       Details for article 35 of 49 found articles
 
 
  In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs
 
 
Title: In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs
Author: Droopad, Ravi
Rajagopalan, Karthik
Abrokwah, Jonathan
Canonico, Michael
Passlack, Matthias
Appeared in: Solid-state electronics
Paging: Volume 50 (2006) nr. 7-8 pages 3 p.
Year: 2006
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 35 of 49 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands