Digitale Bibliotheek
Sluiten Bladeren door artikelen uit een tijdschrift
     Tijdschrift beschrijving
       Alle jaargangen van het bijbehorende tijdschrift
         Alle afleveringen van het bijbehorende jaargang
                                       Alle artikelen van de bijbehorende aflevering
 
                             30 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs Sarkar, Vaskar
2006
50 11-12 p. 1814-1821
8 p.
artikel
2 A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects Narasimha Murty, Neti V.L.
2006
50 11-12 p. 1716-1727
12 p.
artikel
3 A novel approach to fabricate a PPy/p-type Si heterojunction Poddar, Rakesh
2006
50 11-12 p. 1687-1691
5 p.
artikel
4 A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures Wang, Lingquan
2006
50 11-12 p. 1732-1739
8 p.
artikel
5 Author Index 2006
50 11-12 p. III-VIII
nvt p.
artikel
6 A voltage-dependent channel length extraction method for MOSFET’s Joodaki, Mojtaba
2006
50 11-12 p. 1787-1795
9 p.
artikel
7 Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications Si Moussa, M.
2006
50 11-12 p. 1822-1827
6 p.
artikel
8 CCD image sensor with compensated reset operation Park, Sangsik
2006
50 11-12 p. 1828-1834
7 p.
artikel
9 Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic Ho, Ching-Hong
2006
50 11-12 p. 1710-1715
6 p.
artikel
10 Corrigendum to “Benchmark test on surface potential based charge-sheet model” [Solid-State Electronics 2006;50(2):263–267] He, Jin
2006
50 11-12 p. 1838-
1 p.
artikel
11 Degradation of 1/f noise in short channel MOSFETs due to halo angle induced V T non-uniformity and extra trap states at interface Ahsan, A.K.M.
2006
50 11-12 p. 1705-1709
5 p.
artikel
12 Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices Ho, C.S.
2006
50 11-12 p. 1774-1779
6 p.
artikel
13 First-principle study of ferroelectricity in PbTiO3/SrTiO3 superlattices Zhu, Zhenye
2006
50 11-12 p. 1756-1760
5 p.
artikel
14 High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate Zhou, Yi
2006
50 11-12 p. 1744-1747
4 p.
artikel
15 ICP-induced defects in GaN characterized by capacitance analysis Lan, Wen-How
2006
50 11-12 p. 1677-1681
5 p.
artikel
16 IFC - Editorial Board 2006
50 11-12 p. CO2-
1 p.
artikel
17 Keyword Index 2006
50 11-12 p. IX-XIII
nvt p.
artikel
18 Low-temperature carbon monoxide gas sensors based gold/tin dioxide Wang, Shurong
2006
50 11-12 p. 1728-1731
4 p.
artikel
19 Modeling of N-well device and N-well field resistors Kumar Singh, Rahul
2006
50 11-12 p. 1696-1704
9 p.
artikel
20 Numerical analysis of void-induced thermal effects on GaAs/Al x Ga1−x As high power single-quantum-well laser diodes Gity, F.
2006
50 11-12 p. 1767-1773
7 p.
artikel
21 On gate leakage current partition for MOSFET compact model Hu, Jayson
2006
50 11-12 p. 1740-1743
4 p.
artikel
22 On the geometrical dependence of low-frequency noise in SiGe HBTs Zhao, Enhai
2006
50 11-12 p. 1748-1755
8 p.
artikel
23 Scalable and multibias high frequency modeling of multi-fin FETs Crupi, G.
2006
50 11-12 p. 1780-1786
7 p.
artikel
24 Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects Chauhan, Yogesh Singh
2006
50 11-12 p. 1801-1813
13 p.
artikel
25 Structural and electrical properties of brush plated ZnTe films Murali, K.R.
2006
50 11-12 p. 1692-1695
4 p.
artikel
26 Temperature dependence of a slow component of excess carrier decay curves Ichimura, Masaya
2006
50 11-12 p. 1761-1766
6 p.
artikel
27 Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure Kumar, Sandeep
2006
50 11-12 p. 1835-1837
3 p.
artikel
28 Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics Fregonese, S.
2006
50 11-12 p. 1673-1676
4 p.
artikel
29 Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system Koo, H.C.
2006
50 11-12 p. 1682-1686
5 p.
artikel
30 Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current Ortiz-Conde, Adelmo
2006
50 11-12 p. 1796-1800
5 p.
artikel
                             30 gevonden resultaten
 
 Koninklijke Bibliotheek - Nationale Bibliotheek van Nederland