| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs
|
Sarkar, Vaskar
|
|
2006
|
50 |
11-12 |
p. 1814-1821
8 p.
|
artikel
|
| 2 |
A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects
|
Narasimha Murty, Neti V.L.
|
|
2006
|
50 |
11-12 |
p. 1716-1727
12 p.
|
artikel
|
| 3 |
A novel approach to fabricate a PPy/p-type Si heterojunction
|
Poddar, Rakesh
|
|
2006
|
50 |
11-12 |
p. 1687-1691
5 p.
|
artikel
|
| 4 |
A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures
|
Wang, Lingquan
|
|
2006
|
50 |
11-12 |
p. 1732-1739
8 p.
|
artikel
|
| 5 |
Author Index
|
|
|
2006
|
50 |
11-12 |
p. III-VIII
nvt p.
|
artikel
|
| 6 |
A voltage-dependent channel length extraction method for MOSFET’s
|
Joodaki, Mojtaba
|
|
2006
|
50 |
11-12 |
p. 1787-1795
9 p.
|
artikel
|
| 7 |
Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications
|
Si Moussa, M.
|
|
2006
|
50 |
11-12 |
p. 1822-1827
6 p.
|
artikel
|
| 8 |
CCD image sensor with compensated reset operation
|
Park, Sangsik
|
|
2006
|
50 |
11-12 |
p. 1828-1834
7 p.
|
artikel
|
| 9 |
Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic
|
Ho, Ching-Hong
|
|
2006
|
50 |
11-12 |
p. 1710-1715
6 p.
|
artikel
|
| 10 |
Corrigendum to “Benchmark test on surface potential based charge-sheet model” [Solid-State Electronics 2006;50(2):263–267]
|
He, Jin
|
|
2006
|
50 |
11-12 |
p. 1838-
1 p.
|
artikel
|
| 11 |
Degradation of 1/f noise in short channel MOSFETs due to halo angle induced V T non-uniformity and extra trap states at interface
|
Ahsan, A.K.M.
|
|
2006
|
50 |
11-12 |
p. 1705-1709
5 p.
|
artikel
|
| 12 |
Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices
|
Ho, C.S.
|
|
2006
|
50 |
11-12 |
p. 1774-1779
6 p.
|
artikel
|
| 13 |
First-principle study of ferroelectricity in PbTiO3/SrTiO3 superlattices
|
Zhu, Zhenye
|
|
2006
|
50 |
11-12 |
p. 1756-1760
5 p.
|
artikel
|
| 14 |
High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
|
Zhou, Yi
|
|
2006
|
50 |
11-12 |
p. 1744-1747
4 p.
|
artikel
|
| 15 |
ICP-induced defects in GaN characterized by capacitance analysis
|
Lan, Wen-How
|
|
2006
|
50 |
11-12 |
p. 1677-1681
5 p.
|
artikel
|
| 16 |
IFC - Editorial Board
|
|
|
2006
|
50 |
11-12 |
p. CO2-
1 p.
|
artikel
|
| 17 |
Keyword Index
|
|
|
2006
|
50 |
11-12 |
p. IX-XIII
nvt p.
|
artikel
|
| 18 |
Low-temperature carbon monoxide gas sensors based gold/tin dioxide
|
Wang, Shurong
|
|
2006
|
50 |
11-12 |
p. 1728-1731
4 p.
|
artikel
|
| 19 |
Modeling of N-well device and N-well field resistors
|
Kumar Singh, Rahul
|
|
2006
|
50 |
11-12 |
p. 1696-1704
9 p.
|
artikel
|
| 20 |
Numerical analysis of void-induced thermal effects on GaAs/Al x Ga1−x As high power single-quantum-well laser diodes
|
Gity, F.
|
|
2006
|
50 |
11-12 |
p. 1767-1773
7 p.
|
artikel
|
| 21 |
On gate leakage current partition for MOSFET compact model
|
Hu, Jayson
|
|
2006
|
50 |
11-12 |
p. 1740-1743
4 p.
|
artikel
|
| 22 |
On the geometrical dependence of low-frequency noise in SiGe HBTs
|
Zhao, Enhai
|
|
2006
|
50 |
11-12 |
p. 1748-1755
8 p.
|
artikel
|
| 23 |
Scalable and multibias high frequency modeling of multi-fin FETs
|
Crupi, G.
|
|
2006
|
50 |
11-12 |
p. 1780-1786
7 p.
|
artikel
|
| 24 |
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects
|
Chauhan, Yogesh Singh
|
|
2006
|
50 |
11-12 |
p. 1801-1813
13 p.
|
artikel
|
| 25 |
Structural and electrical properties of brush plated ZnTe films
|
Murali, K.R.
|
|
2006
|
50 |
11-12 |
p. 1692-1695
4 p.
|
artikel
|
| 26 |
Temperature dependence of a slow component of excess carrier decay curves
|
Ichimura, Masaya
|
|
2006
|
50 |
11-12 |
p. 1761-1766
6 p.
|
artikel
|
| 27 |
Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure
|
Kumar, Sandeep
|
|
2006
|
50 |
11-12 |
p. 1835-1837
3 p.
|
artikel
|
| 28 |
Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics
|
Fregonese, S.
|
|
2006
|
50 |
11-12 |
p. 1673-1676
4 p.
|
artikel
|
| 29 |
Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system
|
Koo, H.C.
|
|
2006
|
50 |
11-12 |
p. 1682-1686
5 p.
|
artikel
|
| 30 |
Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current
|
Ortiz-Conde, Adelmo
|
|
2006
|
50 |
11-12 |
p. 1796-1800
5 p.
|
artikel
|
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