nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs
|
Sarkar, Vaskar |
|
2006 |
50 |
11-12 |
p. 1814-1821 8 p. |
artikel |
2 |
A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects
|
Narasimha Murty, Neti V.L. |
|
2006 |
50 |
11-12 |
p. 1716-1727 12 p. |
artikel |
3 |
A novel approach to fabricate a PPy/p-type Si heterojunction
|
Poddar, Rakesh |
|
2006 |
50 |
11-12 |
p. 1687-1691 5 p. |
artikel |
4 |
A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures
|
Wang, Lingquan |
|
2006 |
50 |
11-12 |
p. 1732-1739 8 p. |
artikel |
5 |
Author Index
|
|
|
2006 |
50 |
11-12 |
p. III-VIII nvt p. |
artikel |
6 |
A voltage-dependent channel length extraction method for MOSFET’s
|
Joodaki, Mojtaba |
|
2006 |
50 |
11-12 |
p. 1787-1795 9 p. |
artikel |
7 |
Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications
|
Si Moussa, M. |
|
2006 |
50 |
11-12 |
p. 1822-1827 6 p. |
artikel |
8 |
CCD image sensor with compensated reset operation
|
Park, Sangsik |
|
2006 |
50 |
11-12 |
p. 1828-1834 7 p. |
artikel |
9 |
Circuit-limited oscillations at the onset of impurity breakdown in ultrapure p-Ge with an S-shaped current-field characteristic
|
Ho, Ching-Hong |
|
2006 |
50 |
11-12 |
p. 1710-1715 6 p. |
artikel |
10 |
Corrigendum to “Benchmark test on surface potential based charge-sheet model” [Solid-State Electronics 2006;50(2):263–267]
|
He, Jin |
|
2006 |
50 |
11-12 |
p. 1838- 1 p. |
artikel |
11 |
Degradation of 1/f noise in short channel MOSFETs due to halo angle induced V T non-uniformity and extra trap states at interface
|
Ahsan, A.K.M. |
|
2006 |
50 |
11-12 |
p. 1705-1709 5 p. |
artikel |
12 |
Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices
|
Ho, C.S. |
|
2006 |
50 |
11-12 |
p. 1774-1779 6 p. |
artikel |
13 |
First-principle study of ferroelectricity in PbTiO3/SrTiO3 superlattices
|
Zhu, Zhenye |
|
2006 |
50 |
11-12 |
p. 1756-1760 5 p. |
artikel |
14 |
High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate
|
Zhou, Yi |
|
2006 |
50 |
11-12 |
p. 1744-1747 4 p. |
artikel |
15 |
ICP-induced defects in GaN characterized by capacitance analysis
|
Lan, Wen-How |
|
2006 |
50 |
11-12 |
p. 1677-1681 5 p. |
artikel |
16 |
IFC - Editorial Board
|
|
|
2006 |
50 |
11-12 |
p. CO2- 1 p. |
artikel |
17 |
Keyword Index
|
|
|
2006 |
50 |
11-12 |
p. IX-XIII nvt p. |
artikel |
18 |
Low-temperature carbon monoxide gas sensors based gold/tin dioxide
|
Wang, Shurong |
|
2006 |
50 |
11-12 |
p. 1728-1731 4 p. |
artikel |
19 |
Modeling of N-well device and N-well field resistors
|
Kumar Singh, Rahul |
|
2006 |
50 |
11-12 |
p. 1696-1704 9 p. |
artikel |
20 |
Numerical analysis of void-induced thermal effects on GaAs/Al x Ga1−x As high power single-quantum-well laser diodes
|
Gity, F. |
|
2006 |
50 |
11-12 |
p. 1767-1773 7 p. |
artikel |
21 |
On gate leakage current partition for MOSFET compact model
|
Hu, Jayson |
|
2006 |
50 |
11-12 |
p. 1740-1743 4 p. |
artikel |
22 |
On the geometrical dependence of low-frequency noise in SiGe HBTs
|
Zhao, Enhai |
|
2006 |
50 |
11-12 |
p. 1748-1755 8 p. |
artikel |
23 |
Scalable and multibias high frequency modeling of multi-fin FETs
|
Crupi, G. |
|
2006 |
50 |
11-12 |
p. 1780-1786 7 p. |
artikel |
24 |
Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects
|
Chauhan, Yogesh Singh |
|
2006 |
50 |
11-12 |
p. 1801-1813 13 p. |
artikel |
25 |
Structural and electrical properties of brush plated ZnTe films
|
Murali, K.R. |
|
2006 |
50 |
11-12 |
p. 1692-1695 4 p. |
artikel |
26 |
Temperature dependence of a slow component of excess carrier decay curves
|
Ichimura, Masaya |
|
2006 |
50 |
11-12 |
p. 1761-1766 6 p. |
artikel |
27 |
Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure
|
Kumar, Sandeep |
|
2006 |
50 |
11-12 |
p. 1835-1837 3 p. |
artikel |
28 |
Thin film SOI HBT: A study of the effect of substrate bias on the electrical characteristics
|
Fregonese, S. |
|
2006 |
50 |
11-12 |
p. 1673-1676 4 p. |
artikel |
29 |
Transport property of insulating barrier in a ferromagnet-semiconductor hybrid system
|
Koo, H.C. |
|
2006 |
50 |
11-12 |
p. 1682-1686 5 p. |
artikel |
30 |
Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current
|
Ortiz-Conde, Adelmo |
|
2006 |
50 |
11-12 |
p. 1796-1800 5 p. |
artikel |