| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current
|
Ferrier, M.
|
|
2006
|
50 |
1 |
p. 69-77
9 p.
|
artikel
|
| 2 |
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
|
Saint-Martin, J.
|
|
2006
|
50 |
1 |
p. 94-101
8 p.
|
artikel
|
| 3 |
Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
|
Simoen, E.
|
|
2006
|
50 |
1 |
p. 52-57
6 p.
|
artikel
|
| 4 |
Growth of strained Si on He ion implanted Si/SiGe heterostructures
|
Buca, D.
|
|
2006
|
50 |
1 |
p. 32-37
6 p.
|
artikel
|
| 5 |
High-performance bulk CMOS technology for 65/45nm nodes
|
Sugii, T.
|
|
2006
|
50 |
1 |
p. 2-9
8 p.
|
artikel
|
| 6 |
Influence of crystal orientation and body doping on trigate transistor performance
|
Landgraf, E.
|
|
2006
|
50 |
1 |
p. 38-43
6 p.
|
artikel
|
| 7 |
Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15nm UTB SOI based 6T SRAM operation
|
Samsudin, K.
|
|
2006
|
50 |
1 |
p. 86-93
8 p.
|
artikel
|
| 8 |
Investigating the performance limits of silicon-nanowire and carbon-nanotube FETs
|
Marchi, A.
|
|
2006
|
50 |
1 |
p. 78-85
8 p.
|
artikel
|
| 9 |
Low frequency noise characterization and modelling in ultrathin oxide MOSFETs
|
Contaret, T.
|
|
2006
|
50 |
1 |
p. 63-68
6 p.
|
artikel
|
| 10 |
Multigate silicon MOSFETs for 45nm node and beyond
|
Poiroux, T.
|
|
2006
|
50 |
1 |
p. 18-23
6 p.
|
artikel
|
| 11 |
[No title]
|
Sangiorgi, Enrico
|
|
2006
|
50 |
1 |
p. 1-
1 p.
|
artikel
|
| 12 |
Numerical modeling of RF noise in scaled MOS devices
|
Jungemann, C.
|
|
2006
|
50 |
1 |
p. 10-17
8 p.
|
artikel
|
| 13 |
Phase change memories: State-of-the-art, challenges and perspectives
|
Lacaita, A.L.
|
|
2006
|
50 |
1 |
p. 24-31
8 p.
|
artikel
|
| 14 |
Preparation and characterization of rare earth scandates as alternative gate oxide materials
|
Wagner, M.
|
|
2006
|
50 |
1 |
p. 58-62
5 p.
|
artikel
|
| 15 |
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
|
Nirschl, Th.
|
|
2006
|
50 |
1 |
p. 44-51
8 p.
|
artikel
|
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