Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Titel:
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Auteur:
Nirschl, Th. Henzler, St. Fischer, J. Fulde, M. Bargagli-Stoffi, A. Sterkel, M. Sedlmeir, J. Weber, C. Heinrich, R. Schaper, U. Einfeld, J. Neubert, R. Feldmann, U. Stahrenberg, K. Ruderer, E. Georgakos, G. Huber, A. Kakoschke, R. Hansch, W. Schmitt-Landsiedel, D.