| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy
|
Haffouz, S.
|
|
2005
|
49 |
5 |
p. 802-807
6 p.
|
artikel
|
| 2 |
Analysis of variation in leakage currents of Lanthana thin films
|
Kim, Yongshik
|
|
2005
|
49 |
5 |
p. 825-833
9 p.
|
artikel
|
| 3 |
An analytical threshold voltage roll-off equation for MOSFET by using effective-doping model
|
Shih, Chun-Hsing
|
|
2005
|
49 |
5 |
p. 808-812
5 p.
|
artikel
|
| 4 |
An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation
|
Palestri, P.
|
|
2005
|
49 |
5 |
p. 727-732
6 p.
|
artikel
|
| 5 |
A test circuit for measuring MOSFET threshold voltage mismatch
|
Terada, Kazuo
|
|
2005
|
49 |
5 |
p. 818-824
7 p.
|
artikel
|
| 6 |
Beyond the conventional transistor
|
Philip Wong, H.-S.
|
|
2005
|
49 |
5 |
p. 755-762
8 p.
|
artikel
|
| 7 |
Characterization of Pd/Ni/Au ohmic contacts on p-GaN
|
Cho, H.K.
|
|
2005
|
49 |
5 |
p. 774-778
5 p.
|
artikel
|
| 8 |
Characterization of the effective mobility by split C(V) technique in sub 0.1μm Si and SiGe PMOSFETs
|
Romanjek, K.
|
|
2005
|
49 |
5 |
p. 721-726
6 p.
|
artikel
|
| 9 |
Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
|
Specht, M.
|
|
2005
|
49 |
5 |
p. 716-720
5 p.
|
artikel
|
| 10 |
Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor
|
Moon, Jin-Woo
|
|
2005
|
49 |
5 |
p. 834-837
4 p.
|
artikel
|
| 11 |
Empirical model of data retention degradation in stacked-gate flash EEPROM cells with new interpoly dielectric of an Oxide–Nitride–Oxide–Nitride (ONON) layer
|
Kim, Jang Han
|
|
2005
|
49 |
5 |
p. 795-801
7 p.
|
artikel
|
| 12 |
Enhanced passivation characteristics in OLEDs by modification of aluminum cathodes using Ar+ ion beam
|
Jeong, Soon Moon
|
|
2005
|
49 |
5 |
p. 838-846
9 p.
|
artikel
|
| 13 |
Impact of floating silicon film on small-signal parameters of fully depleted SOI-MOSFETs biased into accumulation
|
Wiatr, Maciej
|
|
2005
|
49 |
5 |
p. 779-789
11 p.
|
artikel
|
| 14 |
Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells
|
Cheng, B.
|
|
2005
|
49 |
5 |
p. 740-746
7 p.
|
artikel
|
| 15 |
Impact of scattering in ‘atomistic’ device simulations
|
Alexander, C.
|
|
2005
|
49 |
5 |
p. 733-739
7 p.
|
artikel
|
| 16 |
Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition
|
Ye, P.D.
|
|
2005
|
49 |
5 |
p. 790-794
5 p.
|
artikel
|
| 17 |
Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation
|
Mandelis, Andreas
|
|
2005
|
49 |
5 |
p. 769-773
5 p.
|
artikel
|
| 18 |
[No title]
|
De Meyer, Kristin
|
|
2005
|
49 |
5 |
p. 673-
1 p.
|
artikel
|
| 19 |
On the great potential of non-doped MOSFETs for analog applications in partially-depleted SOI CMOS process
|
Kilchytska, V.
|
|
2005
|
49 |
5 |
p. 708-715
8 p.
|
artikel
|
| 20 |
Printed polymeric passive RC filters and degradation characteristics
|
Cui, Tianhong
|
|
2005
|
49 |
5 |
p. 853-859
7 p.
|
artikel
|
| 21 |
Scaling CMOS: Finding the gate stack with the lowest leakage current
|
Kauerauf, Thomas
|
|
2005
|
49 |
5 |
p. 695-701
7 p.
|
artikel
|
| 22 |
Shift and ratio method revisited: extraction of the fin width in multi-gate devices
|
Collaert, N.
|
|
2005
|
49 |
5 |
p. 763-768
6 p.
|
artikel
|
| 23 |
Simulation of interconnect structures using ghost-field solving methods
|
Schoenmaker, Wim
|
|
2005
|
49 |
5 |
p. 747-754
8 p.
|
artikel
|
| 24 |
Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect
|
Xia, T.-S.
|
|
2005
|
49 |
5 |
p. 860-864
5 p.
|
artikel
|
| 25 |
Space charge limited current conduction in ZincPhthalocyanine (ZnPc) thin films
|
Senthilarasu, S.
|
|
2005
|
49 |
5 |
p. 813-817
5 p.
|
artikel
|
| 26 |
Space-charge-limited currents in GaN Schottky diodes
|
Shen, X.M.
|
|
2005
|
49 |
5 |
p. 847-852
6 p.
|
artikel
|
| 27 |
Sub-band structure engineering for advanced CMOS channels
|
Takagi, Shin-ichi
|
|
2005
|
49 |
5 |
p. 684-694
11 p.
|
artikel
|
| 28 |
Teaching cells to dance: the impact of transistor miniaturization on the manipulation of populations of living cells
|
Abonnenc, M.
|
|
2005
|
49 |
5 |
p. 674-683
10 p.
|
artikel
|
| 29 |
Tunneling 1/f γ noise in 5nm HfO2/2.1nm SiO2 gate stack n-MOSFETs
|
Simoen, E.
|
|
2005
|
49 |
5 |
p. 702-707
6 p.
|
artikel
|
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