| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of the exact and an approximate solution for the resistance between two coplanar circular discs
|
Kristiansson, Simon
|
|
2005
|
49 |
2 |
p. 275-277
3 p.
|
artikel
|
| 2 |
AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric
|
Lee, Kuan-Wei
|
|
2005
|
49 |
2 |
p. 213-217
5 p.
|
artikel
|
| 3 |
Aluminum nitride films deposited under various sputtering parameters on molybdenum electrodes
|
Huang, Cheng-Liang
|
|
2005
|
49 |
2 |
p. 219-225
7 p.
|
artikel
|
| 4 |
Analytical non-linear charge control model for InAlAs/InGaAs/InAlAs double heterostructure high electron mobility transistor (DH-HEMT)
|
Gupta, Ritesh
|
|
2005
|
49 |
2 |
p. 167-174
8 p.
|
artikel
|
| 5 |
An extended analytical approximation for the MOSFET surface potential
|
Chen, T.L.
|
|
2005
|
49 |
2 |
p. 267-270
4 p.
|
artikel
|
| 6 |
A novel interband-resonant tunneling diode (I-RTD) based high-frequency oscillator
|
Woolard, Dwight
|
|
2005
|
49 |
2 |
p. 257-266
10 p.
|
artikel
|
| 7 |
A novel In x Ga1−x N/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
|
Kong, Y.C.
|
|
2005
|
49 |
2 |
p. 199-203
5 p.
|
artikel
|
| 8 |
A silicon metal-semiconductor-metal photodetector macromodel for circuit simulations
|
Pancheri, Lucio
|
|
2005
|
49 |
2 |
p. 175-181
7 p.
|
artikel
|
| 9 |
Charge injection and transport model in organic light-emitting diodes with aluminum cathodes prepared by ion beam assisted deposition
|
Jeong, Soon Moon
|
|
2005
|
49 |
2 |
p. 205-212
8 p.
|
artikel
|
| 10 |
Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs
|
Wells, A.M.
|
|
2005
|
49 |
2 |
p. 279-282
4 p.
|
artikel
|
| 11 |
Experimental and numerical study of H+ irradiated p–i–n diodes for snubberless applications
|
Cova, P.
|
|
2005
|
49 |
2 |
p. 183-191
9 p.
|
artikel
|
| 12 |
Fringe-induced barrier lowering (FIBL) included threshold voltage model for double-gate MOSFETs
|
Chen, Qiang
|
|
2005
|
49 |
2 |
p. 271-274
4 p.
|
artikel
|
| 13 |
High frequency investigation of graded gap injectors for GaAs Gunn diodes
|
Montanari, Simone
|
|
2005
|
49 |
2 |
p. 245-250
6 p.
|
artikel
|
| 14 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
|
Chen, Yeong-Jia
|
|
2005
|
49 |
2 |
p. 163-166
4 p.
|
artikel
|
| 15 |
Incorporation of quantum corrections to semiclassical two-dimensional device modeling with the Wigner–Boltzmann equation
|
Han, Zhiyi
|
|
2005
|
49 |
2 |
p. 145-154
10 p.
|
artikel
|
| 16 |
Influence of carrier velocity related parameters on the propagation delay time of inverters with high-k gate dielectric CMISFETs
|
Ono, Mizuki
|
|
2005
|
49 |
2 |
p. 155-161
7 p.
|
artikel
|
| 17 |
Measuring the specific contact resistance of contacts to semiconductor nanowires
|
Mohney, S.E.
|
|
2005
|
49 |
2 |
p. 227-232
6 p.
|
artikel
|
| 18 |
Numerical local-potential-averaging method for quantum mechanical simulations
|
Kim, Kyoung-Youm
|
|
2005
|
49 |
2 |
p. 239-244
6 p.
|
artikel
|
| 19 |
On the homogeneity of the turn-on process in high-voltage 4H–SiC thyristors
|
Levinshtein, Michael E.
|
|
2005
|
49 |
2 |
p. 233-237
5 p.
|
artikel
|
| 20 |
Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe
|
Wu, D.
|
|
2005
|
49 |
2 |
p. 193-197
5 p.
|
artikel
|
| 21 |
Theoretical study of the influence of strain and polarization on performance of AlGaN/4H-SiC HBT
|
Mastro, M.A.
|
|
2005
|
49 |
2 |
p. 251-256
6 p.
|
artikel
|
Tijdschrift beschrijving