| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlGaInP light emitting diode with a current-blocking structure
|
Wang, H.C.
|
|
2005
|
49 |
1 |
p. 37-41
5 p.
|
artikel
|
| 2 |
An analytical retention model for SONOS nonvolatile memory devices in the excess electron state
|
Wang, Yu
|
|
2005
|
49 |
1 |
p. 97-107
11 p.
|
artikel
|
| 3 |
An analytical two-dimensional model for circular spreading-resistance temperature sensor based on thin silicon film
|
Wu, Z.H.
|
|
2005
|
49 |
1 |
p. 25-30
6 p.
|
artikel
|
| 4 |
A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs
|
Yang, Wenwei
|
|
2005
|
49 |
1 |
p. 43-48
6 p.
|
artikel
|
| 5 |
A novel voltage-controlled oscillator realized with a microresonator
|
Han, Jianqiang
|
|
2005
|
49 |
1 |
p. 63-66
4 p.
|
artikel
|
| 6 |
Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
|
Knoch, J.
|
|
2005
|
49 |
1 |
p. 73-76
4 p.
|
artikel
|
| 7 |
Dynamic threshold voltage MOS in partially depleted SOI technology: a wide frequency band analysis
|
Dehan, Morin
|
|
2005
|
49 |
1 |
p. 67-72
6 p.
|
artikel
|
| 8 |
Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics
|
He, Yandong
|
|
2005
|
49 |
1 |
p. 57-61
5 p.
|
artikel
|
| 9 |
Effects of strain and growth direction on the hall factor in n-type semiconductors
|
Park, Il-soo
|
|
2005
|
49 |
1 |
p. 31-36
6 p.
|
artikel
|
| 10 |
Formation and control of box-shaped ultra-shallow junction using laser annealing and pre-amorphization implantation
|
Kim, Seong-Dong
|
|
2005
|
49 |
1 |
p. 131-135
5 p.
|
artikel
|
| 11 |
High bandwidth-efficiency solar-blind AlGaN Schottky photodiodes with low dark current
|
Tut, T.
|
|
2005
|
49 |
1 |
p. 117-122
6 p.
|
artikel
|
| 12 |
Improved characterization methods for unipolar directly bonded semiconductor junctions
|
Stuchinsky, V.A.
|
|
2005
|
49 |
1 |
p. 9-17
9 p.
|
artikel
|
| 13 |
Measurement of bulk and rear recombination components and application to solar cells with an Al back layer
|
Lago-Aurrekoetxea, R.
|
|
2005
|
49 |
1 |
p. 49-55
7 p.
|
artikel
|
| 14 |
Modeling of non-uniform heat generation in LDMOS transistors
|
Roig, J.
|
|
2005
|
49 |
1 |
p. 77-84
8 p.
|
artikel
|
| 15 |
Modified boundary condition at Si–SiO2 interface for modeling of threshold voltage and subthreshold swing of short-channel SOI MESFET’s
|
Jit, S.
|
|
2005
|
49 |
1 |
p. 141-143
3 p.
|
artikel
|
| 16 |
Non-destructive parameters extraction for IGBT spice model and compared with measurements
|
Yuan, S.C.
|
|
2005
|
49 |
1 |
p. 123-129
7 p.
|
artikel
|
| 17 |
Publisher’s Note
|
|
|
2005
|
49 |
1 |
p. 1-
1 p.
|
artikel
|
| 18 |
Segregation coefficient of impurities at polycrystalline Si/HfO2 interfaces
|
Suzuki, Kunihiro
|
|
2005
|
49 |
1 |
p. 137-139
3 p.
|
artikel
|
| 19 |
Selectively hydrogen-pretreated AlGaAs/InGaAs p-HEMTs and their application to an enhancement/depletion-mode HEMT
|
Kang, In-Ho
|
|
2005
|
49 |
1 |
p. 19-24
6 p.
|
artikel
|
| 20 |
SOI technology characterization using SOI-MOS capacitor
|
Sonnenberg, Victor
|
|
2005
|
49 |
1 |
p. 109-116
8 p.
|
artikel
|
| 21 |
Synthesis and characterization of copper doped zinc telluride thin films
|
John, V.S.
|
|
2005
|
49 |
1 |
p. 3-7
5 p.
|
artikel
|
| 22 |
Unified current equation for predictive modeling of submicron MOSFETs
|
Kloes, Alexander
|
|
2005
|
49 |
1 |
p. 85-95
11 p.
|
artikel
|
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