| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A comprehensive and analytical drain current model for pocket-implanted NMOSFETs
|
Ho, C.S.
|
|
2004
|
48 |
2 |
p. 327-333
7 p.
|
article
|
| 2 |
A doping concentration-dependent upper limit of the breakdown voltage–cutoff frequency product in Si bipolar transistors
|
Rieh, Jae-Sung
|
|
2004
|
48 |
2 |
p. 339-343
5 p.
|
article
|
| 3 |
AlGaN/GaN HEMT based liquid sensors
|
Mehandru, R.
|
|
2004
|
48 |
2 |
p. 351-353
3 p.
|
article
|
| 4 |
2.6 A, 0.69 MWcm−2 single-chip bulk GaN p-i-n rectifier
|
Irokawa, Y.
|
|
2004
|
48 |
2 |
p. 359-361
3 p.
|
article
|
| 5 |
Analysis and design criteria for traveling-wave MESFET
|
Kaddour, M.
|
|
2004
|
48 |
2 |
p. 253-257
5 p.
|
article
|
| 6 |
A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits
|
Yang, Ji-Woon
|
|
2004
|
48 |
2 |
p. 259-270
12 p.
|
article
|
| 7 |
A 200 V silicon-on-sapphire LDMOS structure with a step oxide extended field plate
|
Roig, J.
|
|
2004
|
48 |
2 |
p. 245-252
8 p.
|
article
|
| 8 |
A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors
|
Kuntman, Ayten
|
|
2004
|
48 |
2 |
p. 217-223
7 p.
|
article
|
| 9 |
Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation
|
Chang, S.T.
|
|
2004
|
48 |
2 |
p. 207-215
9 p.
|
article
|
| 10 |
DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETs
|
Song, Young-Joo
|
|
2004
|
48 |
2 |
p. 315-320
6 p.
|
article
|
| 11 |
2D device-level simulation study of strained-Si pnp heterojunction bipolar transistors on virtual substrates
|
Jankovic, N.D.
|
|
2004
|
48 |
2 |
p. 225-230
6 p.
|
article
|
| 12 |
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
|
Hwang, Jeonghyun
|
|
2004
|
48 |
2 |
p. 363-366
4 p.
|
article
|
| 13 |
Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes
|
Kuzmı́k, J.
|
|
2004
|
48 |
2 |
p. 271-276
6 p.
|
article
|
| 14 |
Evaluation of performance degradation factors for high-k gate dielectrics in N-channel MOSFETs
|
Ohata, Akiko
|
|
2004
|
48 |
2 |
p. 345-349
5 p.
|
article
|
| 15 |
High frequency C–V study of devices based on diamond-like carbon films
|
Cheng, Xiang
|
|
2004
|
48 |
2 |
p. 285-289
5 p.
|
article
|
| 16 |
Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts
|
Tao, M.
|
|
2004
|
48 |
2 |
p. 335-338
4 p.
|
article
|
| 17 |
Nitrogen activated bowing parameter of GaAs1−x N x (x⩽1%) obtained from photoreflectance spectra
|
Khan, Arif
|
|
2004
|
48 |
2 |
p. 291-296
6 p.
|
article
|
| 18 |
Nonlinear effects in Schottky junction under a periodic reverse bias with large amplitude
|
Los, Andrei V.
|
|
2004
|
48 |
2 |
p. 321-326
6 p.
|
article
|
| 19 |
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
|
Kim, Keunwoo
|
|
2004
|
48 |
2 |
p. 239-243
5 p.
|
article
|
| 20 |
Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates
|
Jankovic, N.D.
|
|
2004
|
48 |
2 |
p. 277-284
8 p.
|
article
|
| 21 |
Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells
|
Stem, N
|
|
2004
|
48 |
2 |
p. 197-205
9 p.
|
article
|
| 22 |
Schottky diode back contacts for high frequency capacitance studies on semiconductors
|
Mallik, Kanad
|
|
2004
|
48 |
2 |
p. 231-238
8 p.
|
article
|
| 23 |
Small signal measurement of Sc2O3 AlGaN/GaN moshemts
|
Luo, B.
|
|
2004
|
48 |
2 |
p. 355-358
4 p.
|
article
|
| 24 |
The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor
|
Lee, Wai-Kit
|
|
2004
|
48 |
2 |
p. 297-308
12 p.
|
article
|
| 25 |
Thin film transistors on nanocrystalline silicon directly deposited by a microwave plasma CVD
|
Teng, L.H.
|
|
2004
|
48 |
2 |
p. 309-314
6 p.
|
article
|
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