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                             39 results found
no title author magazine year volume issue page(s) type
1 A closed-form expression to analyze electronic properties in delta-doped heterostructures Chen, Xiying
2004
48 12 p. 2321-2327
7 p.
article
2 A compact deep-submicron MOSFET g ds model including hot-electron and thermoelectric effects Zhou, X.
2004
48 12 p. 2125-2131
7 p.
article
3 A comprehensive geometrical and biasing analysis for latchup in 0.18-μm CoSi2 STI CMOS structure Goh, Wang-Ling
2004
48 12 p. 2109-2114
6 p.
article
4 Analysis and optimisation of the trench gated emitter switched thyristor Spulber, O.
2004
48 12 p. 2207-2211
5 p.
article
5 Analytical model for the programming of source side injection SST superflash split-gate cell using two-dimensional analysis Guan, Huinan
2004
48 12 p. 2199-2206
8 p.
article
6 A sum-over-paths impulse-response moment-extraction algorithm for RC IC-interconnect networks Le Coz, Y.L.
2004
48 12 p. 2133-2145
13 p.
article
7 Author index 2004
48 12 p. III-IX
nvt p.
article
8 Calculation of lattice heating in SiC RF power devices Bertilsson, Kent
2004
48 12 p. 2103-2107
5 p.
article
9 Capacitance analysis of devices with electrically floating regions Yamaguchi, Ken
2004
48 12 p. 2115-2124
10 p.
article
10 Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film Lin, Xinnan
2004
48 12 p. 2315-2319
5 p.
article
11 Comment on “Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts” Osvald, J.
2004
48 12 p. 2347-2349
3 p.
article
12 Complementary tunneling transistor for low power application Wang, P.-F.
2004
48 12 p. 2281-2286
6 p.
article
13 Determining the generation lifetime in a MOS capacitor using linear sweep techniques Ťapajna, Milan
2004
48 12 p. 2339-2342
4 p.
article
14 Differential capacitance as a method of determining the presence of a quasi-bidimensional electronic gas Martı́nez-Orozco, J.C.
2004
48 12 p. 2277-2280
4 p.
article
15 Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs Han, Kwangseok
2004
48 12 p. 2255-2262
8 p.
article
16 Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions Hillkirk, Leonardo Martin
2004
48 12 p. 2181-2189
9 p.
article
17 Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures Stuchinsky, V.A.
2004
48 12 p. 2165-2173
9 p.
article
18 Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si Maiti, C.K.
2004
48 12 p. 2235-2241
7 p.
article
19 Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing Son, Myung-Sik
2004
48 12 p. 2307-2313
7 p.
article
20 Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation Alivov, Ya.I.
2004
48 12 p. 2343-2346
4 p.
article
21 Field emission of vertically-aligned carbon nanotube arrays grown on porous silicon substrate Li, Juntao
2004
48 12 p. 2147-2151
5 p.
article
22 High resolution transport spectroscopy in ultimate MOSFETs at very low temperature Sanquer, M.
2004
48 12 p. 2213-2217
5 p.
article
23 Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−x Ge x PMOSFETs Shi, Zhonghai
2004
48 12 p. 2299-2306
8 p.
article
24 Impulse responses of submicron GaAs photodetectors Ohno, T.
2004
48 12 p. 2159-2163
5 p.
article
25 Influence of annealing ambient on GaAs oxide prepared by the liquid phase method Chou, Dei-Wei
2004
48 12 p. 2175-2179
5 p.
article
26 Influences of nonuniformity in metal concentration in gate dielectric silicate on CMIS inverters' propagation delay time Ono, Mizuki
2004
48 12 p. 2191-2198
8 p.
article
27 Integral function method for determination of nonlinear harmonic distortion Cerdeira, Antonio
2004
48 12 p. 2225-2234
10 p.
article
28 Keyword index 2004
48 12 p. XI-XV
nvt p.
article
29 LDMOS in SOI technology with very-thin silicon film Bawedin, M.
2004
48 12 p. 2263-2270
8 p.
article
30 Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics von Haartman, M.
2004
48 12 p. 2271-2275
5 p.
article
31 Optoelectronic properties of Zn0.52Se0.48/Si Schottky diodes Venkatachalam, S.
2004
48 12 p. 2219-2223
5 p.
article
32 Predictive model of a reduced surface field p-LDMOSFET using neural network Kim, Byunghwhan
2004
48 12 p. 2153-2157
5 p.
article
33 Preparation and electrical properties of SrTiO3 ceramics doped with M2O3–PbO–CuO Zhao, Jingchang
2004
48 12 p. 2287-2291
5 p.
article
34 Promotion of piezoelectric properties of lead zirconate titanate ceramics with (Zr,Ti) partially replaced by Nb2O5 Chen, Bing-Huei
2004
48 12 p. 2293-2297
5 p.
article
35 Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs Tilke, Armin T.
2004
48 12 p. 2243-2249
7 p.
article
36 Response to “Comment on ‘Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts”’ [Solid State Electron. 2004;48:335–8] Tao, M.
2004
48 12 p. 2351-2352
2 p.
article
37 Simulation of submicrometer metal–semiconductor–metal ultraviolet photodiodes on gallium nitride Li, J.
2004
48 12 p. 2329-2334
6 p.
article
38 The SILC study by PDO method Wang, Z(i)ou
2004
48 12 p. 2335-2338
4 p.
article
39 100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation Nishizawa, Jun-ichi
2004
48 12 p. 2251-2254
4 p.
article
                             39 results found
 
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