| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed-form expression to analyze electronic properties in delta-doped heterostructures
|
Chen, Xiying
|
|
2004
|
48 |
12 |
p. 2321-2327
7 p.
|
artikel
|
| 2 |
A compact deep-submicron MOSFET g ds model including hot-electron and thermoelectric effects
|
Zhou, X.
|
|
2004
|
48 |
12 |
p. 2125-2131
7 p.
|
artikel
|
| 3 |
A comprehensive geometrical and biasing analysis for latchup in 0.18-μm CoSi2 STI CMOS structure
|
Goh, Wang-Ling
|
|
2004
|
48 |
12 |
p. 2109-2114
6 p.
|
artikel
|
| 4 |
Analysis and optimisation of the trench gated emitter switched thyristor
|
Spulber, O.
|
|
2004
|
48 |
12 |
p. 2207-2211
5 p.
|
artikel
|
| 5 |
Analytical model for the programming of source side injection SST superflash split-gate cell using two-dimensional analysis
|
Guan, Huinan
|
|
2004
|
48 |
12 |
p. 2199-2206
8 p.
|
artikel
|
| 6 |
A sum-over-paths impulse-response moment-extraction algorithm for RC IC-interconnect networks
|
Le Coz, Y.L.
|
|
2004
|
48 |
12 |
p. 2133-2145
13 p.
|
artikel
|
| 7 |
Author index
|
|
|
2004
|
48 |
12 |
p. III-IX
nvt p.
|
artikel
|
| 8 |
Calculation of lattice heating in SiC RF power devices
|
Bertilsson, Kent
|
|
2004
|
48 |
12 |
p. 2103-2107
5 p.
|
artikel
|
| 9 |
Capacitance analysis of devices with electrically floating regions
|
Yamaguchi, Ken
|
|
2004
|
48 |
12 |
p. 2115-2124
10 p.
|
artikel
|
| 10 |
Characterization of double gate MOSFETs fabricated by a simple method on a recrystallized silicon film
|
Lin, Xinnan
|
|
2004
|
48 |
12 |
p. 2315-2319
5 p.
|
artikel
|
| 11 |
Comment on “Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts”
|
Osvald, J.
|
|
2004
|
48 |
12 |
p. 2347-2349
3 p.
|
artikel
|
| 12 |
Complementary tunneling transistor for low power application
|
Wang, P.-F.
|
|
2004
|
48 |
12 |
p. 2281-2286
6 p.
|
artikel
|
| 13 |
Determining the generation lifetime in a MOS capacitor using linear sweep techniques
|
Ťapajna, Milan
|
|
2004
|
48 |
12 |
p. 2339-2342
4 p.
|
artikel
|
| 14 |
Differential capacitance as a method of determining the presence of a quasi-bidimensional electronic gas
|
Martı́nez-Orozco, J.C.
|
|
2004
|
48 |
12 |
p. 2277-2280
4 p.
|
artikel
|
| 15 |
Drain current thermal noise modeling for deep submicron n- and p-channel MOSFETs
|
Han, Kwangseok
|
|
2004
|
48 |
12 |
p. 2255-2262
8 p.
|
artikel
|
| 16 |
Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions
|
Hillkirk, Leonardo Martin
|
|
2004
|
48 |
12 |
p. 2181-2189
9 p.
|
artikel
|
| 17 |
Effects of generation/recombination processes and leakage current through interfacial “punctures” on electrical characterization of unipolar directly bonded semiconductor structures
|
Stuchinsky, V.A.
|
|
2004
|
48 |
12 |
p. 2165-2173
9 p.
|
artikel
|
| 18 |
Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si
|
Maiti, C.K.
|
|
2004
|
48 |
12 |
p. 2235-2241
7 p.
|
artikel
|
| 19 |
Electrical simulation of the flicker in poly-Si TFT-LCD pixels for the large-area and high-quality TFT-LCD development and manufacturing
|
Son, Myung-Sik
|
|
2004
|
48 |
12 |
p. 2307-2313
7 p.
|
artikel
|
| 20 |
Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation
|
Alivov, Ya.I.
|
|
2004
|
48 |
12 |
p. 2343-2346
4 p.
|
artikel
|
| 21 |
Field emission of vertically-aligned carbon nanotube arrays grown on porous silicon substrate
|
Li, Juntao
|
|
2004
|
48 |
12 |
p. 2147-2151
5 p.
|
artikel
|
| 22 |
High resolution transport spectroscopy in ultimate MOSFETs at very low temperature
|
Sanquer, M.
|
|
2004
|
48 |
12 |
p. 2213-2217
5 p.
|
artikel
|
| 23 |
Hole mobility enhancement and Si cap optimization in nanoscale strained Si1−x Ge x PMOSFETs
|
Shi, Zhonghai
|
|
2004
|
48 |
12 |
p. 2299-2306
8 p.
|
artikel
|
| 24 |
Impulse responses of submicron GaAs photodetectors
|
Ohno, T.
|
|
2004
|
48 |
12 |
p. 2159-2163
5 p.
|
artikel
|
| 25 |
Influence of annealing ambient on GaAs oxide prepared by the liquid phase method
|
Chou, Dei-Wei
|
|
2004
|
48 |
12 |
p. 2175-2179
5 p.
|
artikel
|
| 26 |
Influences of nonuniformity in metal concentration in gate dielectric silicate on CMIS inverters' propagation delay time
|
Ono, Mizuki
|
|
2004
|
48 |
12 |
p. 2191-2198
8 p.
|
artikel
|
| 27 |
Integral function method for determination of nonlinear harmonic distortion
|
Cerdeira, Antonio
|
|
2004
|
48 |
12 |
p. 2225-2234
10 p.
|
artikel
|
| 28 |
Keyword index
|
|
|
2004
|
48 |
12 |
p. XI-XV
nvt p.
|
artikel
|
| 29 |
LDMOS in SOI technology with very-thin silicon film
|
Bawedin, M.
|
|
2004
|
48 |
12 |
p. 2263-2270
8 p.
|
artikel
|
| 30 |
Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics
|
von Haartman, M.
|
|
2004
|
48 |
12 |
p. 2271-2275
5 p.
|
artikel
|
| 31 |
Optoelectronic properties of Zn0.52Se0.48/Si Schottky diodes
|
Venkatachalam, S.
|
|
2004
|
48 |
12 |
p. 2219-2223
5 p.
|
artikel
|
| 32 |
Predictive model of a reduced surface field p-LDMOSFET using neural network
|
Kim, Byunghwhan
|
|
2004
|
48 |
12 |
p. 2153-2157
5 p.
|
artikel
|
| 33 |
Preparation and electrical properties of SrTiO3 ceramics doped with M2O3–PbO–CuO
|
Zhao, Jingchang
|
|
2004
|
48 |
12 |
p. 2287-2291
5 p.
|
artikel
|
| 34 |
Promotion of piezoelectric properties of lead zirconate titanate ceramics with (Zr,Ti) partially replaced by Nb2O5
|
Chen, Bing-Huei
|
|
2004
|
48 |
12 |
p. 2293-2297
5 p.
|
artikel
|
| 35 |
Quarter micron BiCMOS technology platform with implanted-base- or SiGe-bipolar transistor for wireless communication ICs
|
Tilke, Armin T.
|
|
2004
|
48 |
12 |
p. 2243-2249
7 p.
|
artikel
|
| 36 |
Response to “Comment on ‘Negative Schottky barrier between titanium and n-type Si(001) for low-resistance ohmic contacts”’ [Solid State Electron. 2004;48:335–8]
|
Tao, M.
|
|
2004
|
48 |
12 |
p. 2351-2352
2 p.
|
artikel
|
| 37 |
Simulation of submicrometer metal–semiconductor–metal ultraviolet photodiodes on gallium nitride
|
Li, J.
|
|
2004
|
48 |
12 |
p. 2329-2334
6 p.
|
artikel
|
| 38 |
The SILC study by PDO method
|
Wang, Z(i)ou
|
|
2004
|
48 |
12 |
p. 2335-2338
4 p.
|
artikel
|
| 39 |
100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation
|
Nishizawa, Jun-ichi
|
|
2004
|
48 |
12 |
p. 2251-2254
4 p.
|
artikel
|
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