| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A closed-loop system for the measurement of self-heating in BJTs
|
O’Dell, T.H.
|
|
2004
|
48 |
1 |
p. 167-170
4 p.
|
artikel
|
| 2 |
A detailed theoretical and experimental noise study in n-on-p Hg0.68Cd0.32Te photodiodes
|
Józwikowski, K.
|
|
2004
|
48 |
1 |
p. 13-21
9 p.
|
artikel
|
| 3 |
A fully integrated 2.4 GHz class-E amplifier with a 63% PAE by 0.18 μm CMOS technologies
|
Ho, Chien-Chih
|
|
2004
|
48 |
1 |
p. 99-102
4 p.
|
artikel
|
| 4 |
A new self-defined empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs
|
Wang, Wen-Kai
|
|
2004
|
48 |
1 |
p. 111-118
8 p.
|
artikel
|
| 5 |
Application of tunnel diodes as millimeter cascades oscillator systems
|
Kamh, Sanaa A
|
|
2004
|
48 |
1 |
p. 3-11
9 p.
|
artikel
|
| 6 |
A word from the new Editor
|
Zaslavsky, Alex
|
|
2004
|
48 |
1 |
p. 1-
1 p.
|
artikel
|
| 7 |
Characteristics of In0.52Al0.48As/In x Ga1−x As HEMT’s with various In xGa1−xAs channels
|
Chen, Yen-Wei
|
|
2004
|
48 |
1 |
p. 119-124
6 p.
|
artikel
|
| 8 |
Comprehensive noise performance of ultrathin oxide MOSFETs at low frequencies
|
Lee, Jonghwan
|
|
2004
|
48 |
1 |
p. 61-71
11 p.
|
artikel
|
| 9 |
Dependence of I–V characteristics on structural parameters of static induction transistor
|
Wang, Yongshun
|
|
2004
|
48 |
1 |
p. 55-59
5 p.
|
artikel
|
| 10 |
Device modeling and simulation of the performance of Cu(In1−x ,Ga x )Se2 solar cells
|
Song, Jiyon
|
|
2004
|
48 |
1 |
p. 73-79
7 p.
|
artikel
|
| 11 |
Doping concentration evaluation using plasma propagation models in plasma immersion ion implantation (PIII) system
|
Gupta, Dushyant
|
|
2004
|
48 |
1 |
p. 171-174
4 p.
|
artikel
|
| 12 |
Effects of temperature variation (300–600 K) in MOSFET modeling in 6H–silicon carbide
|
Hasanuzzaman, Md.
|
|
2004
|
48 |
1 |
p. 125-132
8 p.
|
artikel
|
| 13 |
Effects of the annealing temperature on Ni silicide/n-Si(100) Schottky contacts
|
Zhu, Shiyang
|
|
2004
|
48 |
1 |
p. 29-35
7 p.
|
artikel
|
| 14 |
Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization
|
Chen, Zhi-Hao
|
|
2004
|
48 |
1 |
p. 23-28
6 p.
|
artikel
|
| 15 |
Electrical properties of semi-insulating GaAs crystals grown by vertical gradient freeze and liquid encapsulated Czochralski techniques
|
Polyakov, A.Y.
|
|
2004
|
48 |
1 |
p. 155-161
7 p.
|
artikel
|
| 16 |
Fabrication and characterization of poly(3,4-ethylenedioxythiophene) field-effect transistors
|
Liang, Guirong
|
|
2004
|
48 |
1 |
p. 87-89
3 p.
|
artikel
|
| 17 |
GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
|
LaRoche, J.R.
|
|
2004
|
48 |
1 |
p. 193-196
4 p.
|
artikel
|
| 18 |
Growth of semiconducting KTaO3 thin films
|
Bae, H.-J.
|
|
2004
|
48 |
1 |
p. 51-54
4 p.
|
artikel
|
| 19 |
High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application
|
Tsai, Jung-Hui
|
|
2004
|
48 |
1 |
p. 81-85
5 p.
|
artikel
|
| 20 |
L eff extraction for sub-100 nm MOSFET devices
|
Ye, Qiuyi
|
|
2004
|
48 |
1 |
p. 163-166
4 p.
|
artikel
|
| 21 |
Low-noise behavior of planar Mo/n-Si/Mo optical sensor structures
|
Khunkhao, S.
|
|
2004
|
48 |
1 |
p. 149-154
6 p.
|
artikel
|
| 22 |
Modeling and characterization of capacitive coupling in trench-isolated structures on SOI substrates
|
Heinle, Ulrich
|
|
2004
|
48 |
1 |
p. 43-49
7 p.
|
artikel
|
| 23 |
Modeling and parameter extraction procedure for nanocrystalline TFTs
|
Cerdeira, A.
|
|
2004
|
48 |
1 |
p. 103-109
7 p.
|
artikel
|
| 24 |
RF performance of HVPE-grown AlGaN/GaN HEMTs
|
Mastro, M.A.
|
|
2004
|
48 |
1 |
p. 179-182
4 p.
|
artikel
|
| 25 |
Role of inert gas additive on dry etch patterning of InGaP in planar inductively coupled BCl3 plasmas
|
Lee, J.W.
|
|
2004
|
48 |
1 |
p. 189-192
4 p.
|
artikel
|
| 26 |
Sensitivity of frequency characteristics of semiconductor devices to random doping fluctuations
|
Andrei, Petru
|
|
2004
|
48 |
1 |
p. 133-141
9 p.
|
artikel
|
| 27 |
Temperature dependence of DTMOS transistor characteristics
|
Lee, Jae-Ki
|
|
2004
|
48 |
1 |
p. 183-187
5 p.
|
artikel
|
| 28 |
Temperature dependence of pnp GaN/InGaN HBT performance
|
Lee, K.P.
|
|
2004
|
48 |
1 |
p. 37-41
5 p.
|
artikel
|
| 29 |
Thermal stability of WSi X Schottky contacts on n-type 4H-SiC
|
Kim, Jihyun
|
|
2004
|
48 |
1 |
p. 175-178
4 p.
|
artikel
|
| 30 |
Transconductance frequency dispersion measurements on fully implanted 4H-SiC MESFETs
|
Mitra, Souvick
|
|
2004
|
48 |
1 |
p. 143-147
5 p.
|
artikel
|
| 31 |
Ultrathin oxynitride films on strained SiGe layers by a three-step NO/O2/NO process
|
Samanta, S.K.
|
|
2004
|
48 |
1 |
p. 91-97
7 p.
|
artikel
|
Tijdschrift beschrijving