GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
Titel:
GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
Auteur:
LaRoche, J.R. Luo, B. Ren, F. Baik, K.H. Stodilka, D. Gila, B. Abernathy, C.R. Pearton, S.J. Usikov, A. Tsvetkov, D. Soukhoveev, V. Gainer, G. Rechnikov, A. Dimitriev, V. Chen, G.-T. Pan, C.-C. Chyi, J.-I.