| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A detailed experimental investigation of impact ionization in n-channel metal–oxide–semiconductor field-effect-transistors at very low drain voltages
|
Anil, K.G.
|
|
2003
|
47 |
6 |
p. 995-1001
7 p.
|
artikel
|
| 2 |
A model for tunneling current in multi-layer tunnel dielectrics
|
Govoreanu, Bogdan
|
|
2003
|
47 |
6 |
p. 1045-1053
9 p.
|
artikel
|
| 3 |
A 0.18 μm p-MOSFET large-signal RF model and its application on MMIC design
|
Ho, Chien-Chih
|
|
2003
|
47 |
6 |
p. 1117-1122
6 p.
|
artikel
|
| 4 |
An improved electrostatic discharge protection structure for reducing triggering voltage and parasitic capacitance
|
Gao, Xiaofang
|
|
2003
|
47 |
6 |
p. 1105-1110
6 p.
|
artikel
|
| 5 |
Comparison of the electrical and luminescent properties of p-layer-up and n-layer-up GaN/InGaN light emitting diodes and the effects of Mn doping of the upper n-layer
|
Polyakov, A.Y
|
|
2003
|
47 |
6 |
p. 981-987
7 p.
|
artikel
|
| 6 |
Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process
|
Kelly, F.
|
|
2003
|
47 |
6 |
p. 1027-1030
4 p.
|
artikel
|
| 7 |
Design of junction termination structures for GaN Schottky power rectifiers
|
Baik, K.H.
|
|
2003
|
47 |
6 |
p. 975-979
5 p.
|
artikel
|
| 8 |
Dramatic improving luminous efficiency of organic light emitting diodes under low driving current using nitrogen doped hole transporter
|
Lee, W.J.
|
|
2003
|
47 |
6 |
p. 1127-1130
4 p.
|
artikel
|
| 9 |
Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface
|
Shmidt, N.M.
|
|
2003
|
47 |
6 |
p. 1003-1008
6 p.
|
artikel
|
| 10 |
Effects of base structure on performance of GaN-based heterojunction bipolar transistors
|
Lee, K.P
|
|
2003
|
47 |
6 |
p. 1031-1036
6 p.
|
artikel
|
| 11 |
Electrical and electroluminescent properties of GaN light emitting diodes with the contact layer implanted with Mn
|
Polyakov, A.Y.
|
|
2003
|
47 |
6 |
p. 963-968
6 p.
|
artikel
|
| 12 |
Experimental results on drain and source on insulator MOSFETs fabricated by local SIMOX technology
|
He, Ping
|
|
2003
|
47 |
6 |
p. 1061-1067
7 p.
|
artikel
|
| 13 |
GaN films annealed under high pressure
|
Kelly, Francis
|
|
2003
|
47 |
6 |
p. 1081-1087
7 p.
|
artikel
|
| 14 |
High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications
|
Li, P.W.
|
|
2003
|
47 |
6 |
p. 1095-1098
4 p.
|
artikel
|
| 15 |
Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors
|
Mastro, M.A.
|
|
2003
|
47 |
6 |
p. 1075-1079
5 p.
|
artikel
|
| 16 |
Hydrogen-sensitive GaN Schottky diodes
|
Kim, Jihyun
|
|
2003
|
47 |
6 |
p. 1069-1073
5 p.
|
artikel
|
| 17 |
Induced base transit time of an epitaxial n+pn−n+ bipolar transistor in saturation
|
Shahidul Hassan, M.M
|
|
2003
|
47 |
6 |
p. 943-950
8 p.
|
artikel
|
| 18 |
Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs
|
Lee, K.P.
|
|
2003
|
47 |
6 |
p. 969-974
6 p.
|
artikel
|
| 19 |
Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature
|
Tsai, Jung-Hui
|
|
2003
|
47 |
6 |
p. 1055-1059
5 p.
|
artikel
|
| 20 |
Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes
|
Lin, C.-H.
|
|
2003
|
47 |
6 |
p. 1123-1126
4 p.
|
artikel
|
| 21 |
Low capacitance point diodes fabricated with focused ion beam implantation
|
Bischoff, L.
|
|
2003
|
47 |
6 |
p. 989-993
5 p.
|
artikel
|
| 22 |
Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors
|
Pala, N.
|
|
2003
|
47 |
6 |
p. 1099-1104
6 p.
|
artikel
|
| 23 |
Modeling negative capacitance effect in organic polymers
|
Kwok, H.L.
|
|
2003
|
47 |
6 |
p. 1089-1093
5 p.
|
artikel
|
| 24 |
On the bipolar transistor collector current at the onset of base-widening as a function of the collector–base voltage
|
Karmalkar, S.
|
|
2003
|
47 |
6 |
p. 951-955
5 p.
|
artikel
|
| 25 |
Physical limitation of p–n junction––statistical variations of p–n junction depth in MOSFET array
|
Mizuno, Tomohisa
|
|
2003
|
47 |
6 |
p. 957-962
6 p.
|
artikel
|
| 26 |
Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
|
Luo, B.
|
|
2003
|
47 |
6 |
p. 1015-1020
6 p.
|
artikel
|
| 27 |
Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor
|
Lay, T.S.
|
|
2003
|
47 |
6 |
p. 1021-1025
5 p.
|
artikel
|
| 28 |
Simulations of InGaN-base heterojunction bipolar transistors
|
Lee, K.P.
|
|
2003
|
47 |
6 |
p. 1009-1014
6 p.
|
artikel
|
| 29 |
The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments
|
Li, Ying
|
|
2003
|
47 |
6 |
p. 1111-1115
5 p.
|
artikel
|
| 30 |
Thermal simulations of high power, bulk GaN rectifiers
|
Mehandru, R.
|
|
2003
|
47 |
6 |
p. 1037-1043
7 p.
|
artikel
|
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