| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
All-polymer RC filter circuits fabricated with inkjet printing technology
|
Chen, Bin
|
|
2003
|
47 |
5 |
p. 841-847
7 p.
|
artikel
|
| 2 |
A model of radiation effects in nitride–oxide films for power MOSFET applications
|
Raparla, V.A.K.
|
|
2003
|
47 |
5 |
p. 775-783
9 p.
|
artikel
|
| 3 |
A modified scalable large-signal rf model for quasi-enhancement-mode AlGaAs/InGaAs pHEMTs
|
Wang, Chih-Wei
|
|
2003
|
47 |
5 |
p. 907-912
6 p.
|
artikel
|
| 4 |
An analysis of the effect of carrier transport parameters on organic thin films and their luminescent properties
|
Kwok, H.L.
|
|
2003
|
47 |
5 |
p. 807-810
4 p.
|
artikel
|
| 5 |
An enhanced compact waffle MOSFET with low drain capacitance from a standard submicron CMOS technology
|
Lam, Sang
|
|
2003
|
47 |
5 |
p. 785-789
5 p.
|
artikel
|
| 6 |
A nonlocal channel thermal noise model for nMOSFETs
|
Teng, Heng-Fa
|
|
2003
|
47 |
5 |
p. 815-819
5 p.
|
artikel
|
| 7 |
A self-consistent model for small-signal parameters and noise performance of InAlAs/InGaAs/InAlAs/InP HEMTs
|
Liu, Kuo-Wei
|
|
2003
|
47 |
5 |
p. 763-768
6 p.
|
artikel
|
| 8 |
Capacitance–voltage measurements on ultrathin gate dielectrics
|
Norton, David P.
|
|
2003
|
47 |
5 |
p. 801-805
5 p.
|
artikel
|
| 9 |
Characterization of SONOS oxynitride nonvolatile semiconductor memory devices
|
Wrazien, Stephen J.
|
|
2003
|
47 |
5 |
p. 885-891
7 p.
|
artikel
|
| 10 |
Current spreading in contact layers and model for 2D numerical calculation of resonant-tunneling diode
|
Biryulin, P.I.
|
|
2003
|
47 |
5 |
p. 769-774
6 p.
|
artikel
|
| 11 |
Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition
|
Suliman, S.A.
|
|
2003
|
47 |
5 |
p. 899-905
7 p.
|
artikel
|
| 12 |
Fabrication and characteristics of polymeric thin-film capacitor
|
Liu, Yuxin
|
|
2003
|
47 |
5 |
p. 811-814
4 p.
|
artikel
|
| 13 |
Harmonic and intermodulation distortion in SOI FD transistors
|
Taher Abuelma’atti, Muhammad
|
|
2003
|
47 |
5 |
p. 797-800
4 p.
|
artikel
|
| 14 |
Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-Al x Ga1−x N
|
Burdett, William
|
|
2003
|
47 |
5 |
p. 931-935
5 p.
|
artikel
|
| 15 |
Improving turn on voltage and driving voltage of organic electroluminescent devices with nitrogen doped electron transporter
|
Lee, W.J.
|
|
2003
|
47 |
5 |
p. 927-929
3 p.
|
artikel
|
| 16 |
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
|
Lin, Y.C.
|
|
2003
|
47 |
5 |
p. 849-853
5 p.
|
artikel
|
| 17 |
Investigation of degradation mechanism of Schottky diodes
|
Lee, Hsin-Ying
|
|
2003
|
47 |
5 |
p. 831-834
4 p.
|
artikel
|
| 18 |
Investigation of the electrical degradation of a metal–oxide–silicon capacitor by scanning thermal microscopy
|
Gomés, S.
|
|
2003
|
47 |
5 |
p. 919-922
4 p.
|
artikel
|
| 19 |
Matrix representation of shot noise due to carrier generation in planar double Schottky-barrier structures
|
Khunkhao, S.
|
|
2003
|
47 |
5 |
p. 913-917
5 p.
|
artikel
|
| 20 |
Microwave power SiC MESFETs and GaN HEMTs
|
Zhang, A.P.
|
|
2003
|
47 |
5 |
p. 821-826
6 p.
|
artikel
|
| 21 |
Minority carrier lifetime and diffusion length in Si1−x−y Ge x C y heterolayers
|
Samanta, S.K.
|
|
2003
|
47 |
5 |
p. 893-897
5 p.
|
artikel
|
| 22 |
Modeling of clustering reaction and diffusion of boron in strained Si1−x Ge x epitaxial layers
|
Rajendran, K.
|
|
2003
|
47 |
5 |
p. 835-839
5 p.
|
artikel
|
| 23 |
Nitride-based multiquantum well p–n junction photodiodes
|
Su, Yan-Kuin
|
|
2003
|
47 |
5 |
p. 879-883
5 p.
|
artikel
|
| 24 |
Nonvolatile memory disturbs due to gate and junction leakage currents
|
Park, J.E.
|
|
2003
|
47 |
5 |
p. 855-864
10 p.
|
artikel
|
| 25 |
Novel nitrogen monoxides (NO) gas sensors integrated with tungsten trioxide (WO3)/pin structure for room temperature operation
|
Ho, Jyh-Jier
|
|
2003
|
47 |
5 |
p. 827-830
4 p.
|
artikel
|
| 26 |
Subthreshold slope degradation model for localized-charge-trapping based non-volatile memory devices
|
Shappir, Assaf
|
|
2003
|
47 |
5 |
p. 937-941
5 p.
|
artikel
|
| 27 |
Topology investigation for the low frequency noise compact modelling of bipolar transistors
|
Borgarino, M.
|
|
2003
|
47 |
5 |
p. 791-796
6 p.
|
artikel
|
| 28 |
Using diode-stacked NMOS as high voltage tolerant ESD protection device for analog applications in deep submicron CMOS technologies
|
Chen, Chung-Hui
|
|
2003
|
47 |
5 |
p. 865-871
7 p.
|
artikel
|
| 29 |
Visible–blind GaN p–i–n photodiodes with an Al0.12Ga0.88N/GaN superlattice structure
|
Yeh, L.S.
|
|
2003
|
47 |
5 |
p. 873-878
6 p.
|
artikel
|
| 30 |
Zn doping into InP induced by Nd: YAG continuous wave laser
|
Hongtao, Tian
|
|
2003
|
47 |
5 |
p. 923-925
3 p.
|
artikel
|
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