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                             37 results found
no title author magazine year volume issue page(s) type
1 A high-power AlGaN/GaN heterojunction field-effect transistor Yoshida, Seikoh
2003
47 3 p. 589-592
4 p.
article
2 A study of GaN etching characteristics using HBr-based inductively coupled plasmas Kim, D.W.
2003
47 3 p. 549-552
4 p.
article
3 Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy Wagner, J.
2003
47 3 p. 461-465
5 p.
article
4 Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers Fehse, R.
2003
47 3 p. 501-506
6 p.
article
5 Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma Sanguino, P.
2003
47 3 p. 559-563
5 p.
article
6 Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy Kim, H.
2003
47 3 p. 539-542
4 p.
article
7 Derivation of a 10-band k · p model for dilute nitride semiconductors Lindsay, A.
2003
47 3 p. 443-446
4 p.
article
8 Diffusion at the interfaces of InGaNAs/GaAs quantum wells Peng, C.S
2003
47 3 p. 431-435
5 p.
article
9 Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs Bullough, T.J.
2003
47 3 p. 407-412
6 p.
article
10 Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1−x P x SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition Kikawa, Junjiroh
2003
47 3 p. 523-527
5 p.
article
11 Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers Pavelescu, E.-M.
2003
47 3 p. 507-512
6 p.
article
12 Er diffusion into gallium nitride Chen, Chii-Chang
2003
47 3 p. 529-531
3 p.
article
13 Hunting for a single-source precursor: toward stoichiometry controlled CVD of 13–15 composites Timoshkin, A.Y
2003
47 3 p. 543-548
6 p.
article
14 Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures Polimeni, A.
2003
47 3 p. 447-453
7 p.
article
15 Influence of preparation parameters for low-energy ion beam nitridation of III–V semiconductor surfaces Hecht, J.-D.
2003
47 3 p. 413-418
6 p.
article
16 InSb1−x N x growth and devices Ashley, T.
2003
47 3 p. 387-394
8 p.
article
17 Interest of the {111} orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxy Blanc, S.
2003
47 3 p. 395-398
4 p.
article
18 Lattice distortions effect on exciton bound to nitrogen in GaP-rich A3B5 alloys Parfenova, I.I.
2003
47 3 p. 497-500
4 p.
article
19 LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys Tite, T.
2003
47 3 p. 455-460
6 p.
article
20 Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well White, S.L.
2003
47 3 p. 425-429
5 p.
article
21 Microscopic theory of gain and spontaneous emission in GaInNAs laser material Hader, J.
2003
47 3 p. 513-521
9 p.
article
22 Microstructure of planar defects and their interactions in wurtzite GaN films Kioseoglou, J.
2003
47 3 p. 553-557
5 p.
article
23 Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells Klar, P.J.
2003
47 3 p. 437-441
5 p.
article
24 Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 μm laser diodes Carrère, H.
2003
47 3 p. 419-423
5 p.
article
25 [No title] Chen, Weimin M.
2003
47 3 p. 385-
1 p.
article
26 Optical investigations of InGaAsN/GaAs single quantum well structures Sitarek, P
2003
47 3 p. 489-492
4 p.
article
27 Optical properties and transport in PLD-GaN Niehus, M.
2003
47 3 p. 569-573
5 p.
article
28 Optical properties of GaInNAs/GaAs quantum wells Mazzucato, S.
2003
47 3 p. 483-487
5 p.
article
29 Photoluminescence of GaN layers studied with two-color spectroscopy Wojdak, M.
2003
47 3 p. 579-581
3 p.
article
30 Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 μm Pinault, M.-A.
2003
47 3 p. 477-482
6 p.
article
31 Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma Gupta, J.A
2003
47 3 p. 399-405
7 p.
article
32 Pulsed laser deposition of manganese doped GaN thin films O’Mahony, D.
2003
47 3 p. 533-537
5 p.
article
33 Recombination processes in N-containing III–V ternary alloys Buyanova, I.A
2003
47 3 p. 467-475
9 p.
article
34 Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructures Sukach, G.A.
2003
47 3 p. 583-587
5 p.
article
35 Study of inversion domain pyramids formed during the GaN:Mg growth Martı́nez-Criado, G.
2003
47 3 p. 565-568
4 p.
article
36 Temperature behavior of the GaNP band gap energy Rudko, G.Yu.
2003
47 3 p. 493-496
4 p.
article
37 Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures Chen, Chii-Chang
2003
47 3 p. 575-578
4 p.
article
                             37 results found
 
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