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                                       Details for article 17 of 37 found articles
 
 
  Interest of the {111} orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxy
 
 
Title: Interest of the {111} orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxy
Author: Blanc, S.
Arnoult, A.
Carrère, H.
Fontaine, C.
Appeared in: Solid-state electronics
Paging: Volume 47 (2003) nr. 3 pages 4 p.
Year: 2003
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 17 of 37 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands