| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high-power AlGaN/GaN heterojunction field-effect transistor
|
Yoshida, Seikoh
|
|
2003
|
47 |
3 |
p. 589-592
4 p.
|
artikel
|
| 2 |
A study of GaN etching characteristics using HBr-based inductively coupled plasmas
|
Kim, D.W.
|
|
2003
|
47 |
3 |
p. 549-552
4 p.
|
artikel
|
| 3 |
Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
|
Wagner, J.
|
|
2003
|
47 |
3 |
p. 461-465
5 p.
|
artikel
|
| 4 |
Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers
|
Fehse, R.
|
|
2003
|
47 |
3 |
p. 501-506
6 p.
|
artikel
|
| 5 |
Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma
|
Sanguino, P.
|
|
2003
|
47 |
3 |
p. 559-563
5 p.
|
artikel
|
| 6 |
Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy
|
Kim, H.
|
|
2003
|
47 |
3 |
p. 539-542
4 p.
|
artikel
|
| 7 |
Derivation of a 10-band k · p model for dilute nitride semiconductors
|
Lindsay, A.
|
|
2003
|
47 |
3 |
p. 443-446
4 p.
|
artikel
|
| 8 |
Diffusion at the interfaces of InGaNAs/GaAs quantum wells
|
Peng, C.S
|
|
2003
|
47 |
3 |
p. 431-435
5 p.
|
artikel
|
| 9 |
Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs
|
Bullough, T.J.
|
|
2003
|
47 |
3 |
p. 407-412
6 p.
|
artikel
|
| 10 |
Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN1−x P x SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition
|
Kikawa, Junjiroh
|
|
2003
|
47 |
3 |
p. 523-527
5 p.
|
artikel
|
| 11 |
Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers
|
Pavelescu, E.-M.
|
|
2003
|
47 |
3 |
p. 507-512
6 p.
|
artikel
|
| 12 |
Er diffusion into gallium nitride
|
Chen, Chii-Chang
|
|
2003
|
47 |
3 |
p. 529-531
3 p.
|
artikel
|
| 13 |
Hunting for a single-source precursor: toward stoichiometry controlled CVD of 13–15 composites
|
Timoshkin, A.Y
|
|
2003
|
47 |
3 |
p. 543-548
6 p.
|
artikel
|
| 14 |
Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures
|
Polimeni, A.
|
|
2003
|
47 |
3 |
p. 447-453
7 p.
|
artikel
|
| 15 |
Influence of preparation parameters for low-energy ion beam nitridation of III–V semiconductor surfaces
|
Hecht, J.-D.
|
|
2003
|
47 |
3 |
p. 413-418
6 p.
|
artikel
|
| 16 |
InSb1−x N x growth and devices
|
Ashley, T.
|
|
2003
|
47 |
3 |
p. 387-394
8 p.
|
artikel
|
| 17 |
Interest of the {111} orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxy
|
Blanc, S.
|
|
2003
|
47 |
3 |
p. 395-398
4 p.
|
artikel
|
| 18 |
Lattice distortions effect on exciton bound to nitrogen in GaP-rich A3B5 alloys
|
Parfenova, I.I.
|
|
2003
|
47 |
3 |
p. 497-500
4 p.
|
artikel
|
| 19 |
LO phonon–plasmon coupling and mechanical disorder-induced effect in the Raman spectra of GaAsN alloys
|
Tite, T.
|
|
2003
|
47 |
3 |
p. 455-460
6 p.
|
artikel
|
| 20 |
Medium energy ion scattering studies of as-grown and annealed GaInNAs/GaAs quantum well
|
White, S.L.
|
|
2003
|
47 |
3 |
p. 425-429
5 p.
|
artikel
|
| 21 |
Microscopic theory of gain and spontaneous emission in GaInNAs laser material
|
Hader, J.
|
|
2003
|
47 |
3 |
p. 513-521
9 p.
|
artikel
|
| 22 |
Microstructure of planar defects and their interactions in wurtzite GaN films
|
Kioseoglou, J.
|
|
2003
|
47 |
3 |
p. 553-557
5 p.
|
artikel
|
| 23 |
Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells
|
Klar, P.J.
|
|
2003
|
47 |
3 |
p. 437-441
5 p.
|
artikel
|
| 24 |
Nitrogen-plasma study for plasma-assisted MBE growth of 1.3 μm laser diodes
|
Carrère, H.
|
|
2003
|
47 |
3 |
p. 419-423
5 p.
|
artikel
|
| 25 |
[No title]
|
Chen, Weimin M.
|
|
2003
|
47 |
3 |
p. 385-
1 p.
|
artikel
|
| 26 |
Optical investigations of InGaAsN/GaAs single quantum well structures
|
Sitarek, P
|
|
2003
|
47 |
3 |
p. 489-492
4 p.
|
artikel
|
| 27 |
Optical properties and transport in PLD-GaN
|
Niehus, M.
|
|
2003
|
47 |
3 |
p. 569-573
5 p.
|
artikel
|
| 28 |
Optical properties of GaInNAs/GaAs quantum wells
|
Mazzucato, S.
|
|
2003
|
47 |
3 |
p. 483-487
5 p.
|
artikel
|
| 29 |
Photoluminescence of GaN layers studied with two-color spectroscopy
|
Wojdak, M.
|
|
2003
|
47 |
3 |
p. 579-581
3 p.
|
artikel
|
| 30 |
Photoluminescence spectroscopy of Ga(In)NAs quantum wells for emission at 1.5 μm
|
Pinault, M.-A.
|
|
2003
|
47 |
3 |
p. 477-482
6 p.
|
artikel
|
| 31 |
Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma
|
Gupta, J.A
|
|
2003
|
47 |
3 |
p. 399-405
7 p.
|
artikel
|
| 32 |
Pulsed laser deposition of manganese doped GaN thin films
|
O’Mahony, D.
|
|
2003
|
47 |
3 |
p. 533-537
5 p.
|
artikel
|
| 33 |
Recombination processes in N-containing III–V ternary alloys
|
Buyanova, I.A
|
|
2003
|
47 |
3 |
p. 467-475
9 p.
|
artikel
|
| 34 |
Selective photodetectors based on GaAlAs/GaAs and GaN/GaInN heterostructures
|
Sukach, G.A.
|
|
2003
|
47 |
3 |
p. 583-587
5 p.
|
artikel
|
| 35 |
Study of inversion domain pyramids formed during the GaN:Mg growth
|
Martı́nez-Criado, G.
|
|
2003
|
47 |
3 |
p. 565-568
4 p.
|
artikel
|
| 36 |
Temperature behavior of the GaNP band gap energy
|
Rudko, G.Yu.
|
|
2003
|
47 |
3 |
p. 493-496
4 p.
|
artikel
|
| 37 |
Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures
|
Chen, Chii-Chang
|
|
2003
|
47 |
3 |
p. 575-578
4 p.
|
artikel
|
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