| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability
|
Boos, J.B
|
|
2003
|
47 |
2 |
p. 181-184
4 p.
|
artikel
|
| 2 |
Ambipolar Schottky barrier silicon-on-insulator metal–oxide–semiconductor transistors
|
Lin, Horng-Chih
|
|
2003
|
47 |
2 |
p. 247-251
5 p.
|
artikel
|
| 3 |
A numerical study of partial-SOI LDMOSFETs
|
Park, J.M
|
|
2003
|
47 |
2 |
p. 275-281
7 p.
|
artikel
|
| 4 |
A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation
|
Nawaz, Muhammad
|
|
2003
|
47 |
2 |
p. 291-295
5 p.
|
artikel
|
| 5 |
CMOS current-mode binary hysteresis with external controls
|
Jiang, Y.
|
|
2003
|
47 |
2 |
p. 271-274
4 p.
|
artikel
|
| 6 |
Contact resistance extraction in pentacene thin film transistors
|
Necliudov, Peter V
|
|
2003
|
47 |
2 |
p. 259-262
4 p.
|
artikel
|
| 7 |
Contact resistance in organic thin film transistors
|
Klauk, Hagen
|
|
2003
|
47 |
2 |
p. 297-301
5 p.
|
artikel
|
| 8 |
Deep levels in ion implanted field effect transistors on SiC
|
Mitra, S
|
|
2003
|
47 |
2 |
p. 193-198
6 p.
|
artikel
|
| 9 |
Demonstration of high voltage (600–1300 V), high current (10–140 A), fast recovery 4H-SiC p-i-n/Schottky(MPS) barrier diodes
|
Alexandrov, P
|
|
2003
|
47 |
2 |
p. 263-269
7 p.
|
artikel
|
| 10 |
Demonstration of 4H-SiC avalanche photodiodes linear array
|
Yan, F
|
|
2003
|
47 |
2 |
p. 241-245
5 p.
|
artikel
|
| 11 |
Design of a novel planar normally-off power VJFET in 4H-SiC
|
Zhao, J.H
|
|
2003
|
47 |
2 |
p. 377-384
8 p.
|
artikel
|
| 12 |
Device physics considerations for SOI domino circuit design
|
Subba, Niraj
|
|
2003
|
47 |
2 |
p. 175-179
5 p.
|
artikel
|
| 13 |
Effects of impurity traps on gate current and trapped charge in MOSFETs
|
Islam, Syed S
|
|
2003
|
47 |
2 |
p. 333-337
5 p.
|
artikel
|
| 14 |
Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs
|
Kameda, Atsushi
|
|
2003
|
47 |
2 |
p. 323-331
9 p.
|
artikel
|
| 15 |
Effects of underlying dielectric on boron implanted polysilicon in presence of fluorine
|
Gupta, Sandhya
|
|
2003
|
47 |
2 |
p. 307-313
7 p.
|
artikel
|
| 16 |
Electrical characterization and structure investigation of quad flat non-lead package for RFIC applications
|
Chen, Nansen
|
|
2003
|
47 |
2 |
p. 315-322
8 p.
|
artikel
|
| 17 |
Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach
|
Kasai, Seiya
|
|
2003
|
47 |
2 |
p. 199-204
6 p.
|
artikel
|
| 18 |
Fabrication of poly-Si TFT's on glass with a novel method of back-reflecting low-temperature UV-assisted nickel-induced crystallization
|
Rezaee, Leila
|
|
2003
|
47 |
2 |
p. 361-366
6 p.
|
artikel
|
| 19 |
Foreword
|
Iliadis, Agis A
|
|
2003
|
47 |
2 |
p. 173-
1 p.
|
artikel
|
| 20 |
Frequency and temperature dependence of gain compression in GaN/AlGaN HEMT amplifiers
|
Ahmed, Arif
|
|
2003
|
47 |
2 |
p. 339-344
6 p.
|
artikel
|
| 21 |
High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET
|
Aniel, F
|
|
2003
|
47 |
2 |
p. 283-289
7 p.
|
artikel
|
| 22 |
4H-SiC bipolar junction transistor with high current and power density
|
Perez-Wurfl, I
|
|
2003
|
47 |
2 |
p. 229-231
3 p.
|
artikel
|
| 23 |
Increased CMOS inverter switching speed with asymmetrical doping
|
Akturk, Akin
|
|
2003
|
47 |
2 |
p. 185-192
8 p.
|
artikel
|
| 24 |
In0.5Ga0.5P/In0.22Ga0.78As pseudomorphic high electron mobility transistors with an oxidized GaAs gate for improved breakdown voltage characteristics
|
Lee, Jae-Woo
|
|
2003
|
47 |
2 |
p. 223-228
6 p.
|
artikel
|
| 25 |
Maturing ion-implantation technology and its device applications in SiC
|
Rao, Mulpuri V
|
|
2003
|
47 |
2 |
p. 213-222
10 p.
|
artikel
|
| 26 |
Measurement of noise characteristics of MEMS accelerometers
|
Mohd-Yasin, Faisal
|
|
2003
|
47 |
2 |
p. 357-360
4 p.
|
artikel
|
| 27 |
Novel semiconductor device approach for finding acceptable solutions to classes of graph-based computing problems not otherwise possible
|
De Claris, Nicholas
|
|
2003
|
47 |
2 |
p. 367-376
10 p.
|
artikel
|
| 28 |
On the temperature coefficient of 4H-SiC BJT current gain
|
Li, X
|
|
2003
|
47 |
2 |
p. 233-239
7 p.
|
artikel
|
| 29 |
Preparation of phosphorous dope beta-irondisilicide thin films and application for devices
|
Ehara, Takashi
|
|
2003
|
47 |
2 |
p. 353-356
4 p.
|
artikel
|
| 30 |
Temperature-insensitive semiconductor quantum dot laser
|
Asryan, Levon V
|
|
2003
|
47 |
2 |
p. 205-212
8 p.
|
artikel
|
| 31 |
Thermal simulation for SOI devices using thermal-circuit models and device simulation
|
Cheng, Ming-C
|
|
2003
|
47 |
2 |
p. 345-351
7 p.
|
artikel
|
| 32 |
Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC
|
Ruppalt, L.B.
|
|
2003
|
47 |
2 |
p. 253-257
5 p.
|
artikel
|
| 33 |
Very high quality p-type Al x Ga1−x N/GaN superlattice
|
Yasan, Alireza
|
|
2003
|
47 |
2 |
p. 303-306
4 p.
|
artikel
|
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