| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A design consideration of channel doping profile for sub-0.12 μm partially depleted SOI n-MOSFET's
|
Juang, M.H
|
|
2002
|
46 |
8 |
p. 1117-1121
5 p.
|
artikel
|
| 2 |
Analog circuit design using graded-channel silicon-on-insulator nMOSFETs
|
Pavanello, Marcelo Antonio
|
|
2002
|
46 |
8 |
p. 1215-1225
11 p.
|
artikel
|
| 3 |
Analysis of body bias effect with PD-SOI for analog and RF applications
|
Lee, Hyeokjae
|
|
2002
|
46 |
8 |
p. 1169-1176
8 p.
|
artikel
|
| 4 |
Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors
|
Mutlu, Ayhan A
|
|
2002
|
46 |
8 |
p. 1133-1137
5 p.
|
artikel
|
| 5 |
A novel GaAs MESFET with surface oxygen implantation
|
Hsin, Yue-Ming
|
|
2002
|
46 |
8 |
p. 1151-1154
4 p.
|
artikel
|
| 6 |
Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)
|
Huang, Jingyun
|
|
2002
|
46 |
8 |
p. 1231-1234
4 p.
|
artikel
|
| 7 |
DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress
|
Tarakji, A
|
|
2002
|
46 |
8 |
p. 1211-1214
4 p.
|
artikel
|
| 8 |
Degradation of passivated and non-passivated N-channel low-temperature polycrystalline silicon TFTs prepared by excimer laser processing
|
Teng, T.H
|
|
2002
|
46 |
8 |
p. 1079-1083
5 p.
|
artikel
|
| 9 |
Drift region optimization of lateral RESURF devices
|
Vestling, L
|
|
2002
|
46 |
8 |
p. 1177-1184
8 p.
|
artikel
|
| 10 |
Formation of low resistivity ohmic contacts to n-type 3C-SiC
|
Wan, Jianwei
|
|
2002
|
46 |
8 |
p. 1227-1230
4 p.
|
artikel
|
| 11 |
Impact of nitrogen and/or fluorine implantation on deep-submicron Co–salicide process
|
Chang, T.Y
|
|
2002
|
46 |
8 |
p. 1097-1101
5 p.
|
artikel
|
| 12 |
Influence of the silicon substrate thickness on the response of thin film pyroelectric detectors
|
Ko, Jong Soo
|
|
2002
|
46 |
8 |
p. 1155-1161
7 p.
|
artikel
|
| 13 |
Investigation of disturbance for the new dual floating gate multilevel flash cells
|
Lin, Hongchin
|
|
2002
|
46 |
8 |
p. 1145-1150
6 p.
|
artikel
|
| 14 |
Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors
|
Lee, Hsin-Ying
|
|
2002
|
46 |
8 |
p. 1075-1078
4 p.
|
artikel
|
| 15 |
Low-dielectric constant FLARE 2.0 films for bottom antireflective coating layers in KrF lithography
|
Chen, H.L
|
|
2002
|
46 |
8 |
p. 1127-1131
5 p.
|
artikel
|
| 16 |
MOCVD-grown HEMTs on Al2O3 substrates
|
Johnson, J.W
|
|
2002
|
46 |
8 |
p. 1193-1204
12 p.
|
artikel
|
| 17 |
New “silicon limit” of power devices
|
Chen, Xing-Bi
|
|
2002
|
46 |
8 |
p. 1185-1192
8 p.
|
artikel
|
| 18 |
Novel applications of X-ray analysis to microelectronic materials and devices
|
Cargill III, G.S
|
|
2002
|
46 |
8 |
p. 1139-1143
5 p.
|
artikel
|
| 19 |
Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes
|
Cao, X.A
|
|
2002
|
46 |
8 |
p. 1235-1239
5 p.
|
artikel
|
| 20 |
Self-aligned fabrication of thin-film transistors with field-induced drain
|
Yu, C.M
|
|
2002
|
46 |
8 |
p. 1091-1095
5 p.
|
artikel
|
| 21 |
Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
|
Tseng, Chang-Ho
|
|
2002
|
46 |
8 |
p. 1085-1090
6 p.
|
artikel
|
| 22 |
Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate
|
Horng, R.H
|
|
2002
|
46 |
8 |
p. 1103-1108
6 p.
|
artikel
|
| 23 |
Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers
|
Dang, G
|
|
2002
|
46 |
8 |
p. 1247-1249
3 p.
|
artikel
|
| 24 |
The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates
|
Chang, S.T
|
|
2002
|
46 |
8 |
p. 1113-1116
4 p.
|
artikel
|
| 25 |
The design and fabrication of a micro-thermal/pressure-sensor for medical electro-skin application
|
Ho, Jyh-Jier
|
|
2002
|
46 |
8 |
p. 1205-1209
5 p.
|
artikel
|
| 26 |
The extraction of MOSFET gate capacitance from S-parameter measurements
|
Su, Jiong-Guang
|
|
2002
|
46 |
8 |
p. 1163-1167
5 p.
|
artikel
|
| 27 |
The impact of implantation sequence on the characterization of n-MOSFET's with gate oxide grown on nitrogen-implanted Si substrate
|
Wu, You-Lin
|
|
2002
|
46 |
8 |
p. 1241-1245
5 p.
|
artikel
|
| 28 |
Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure
|
Chen, Chii-Chang
|
|
2002
|
46 |
8 |
p. 1123-1126
4 p.
|
artikel
|
| 29 |
Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode
|
Su, Yan-Kuin
|
|
2002
|
46 |
8 |
p. 1109-1111
3 p.
|
artikel
|
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