| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A macro model of silicon spiral inductor
|
Su, C.Y.
|
|
2002
|
46 |
5 |
p. 759-767
9 p.
|
artikel
|
| 2 |
A model for exciton formation in organic electroluminescent devices
|
Kwok, H.L.
|
|
2002
|
46 |
5 |
p. 645-650
6 p.
|
artikel
|
| 3 |
An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs
|
Rashmi,
|
|
2002
|
46 |
5 |
p. 621-630
10 p.
|
artikel
|
| 4 |
Analysis of the diode characteristics using the thermodynamic theories
|
Maa, Yann Jiun
|
|
2002
|
46 |
5 |
p. 735-742
8 p.
|
artikel
|
| 5 |
A review of SiC static induction transistor development for high-frequency power amplifiers
|
Sung, Y.M.
|
|
2002
|
46 |
5 |
p. 605-613
9 p.
|
artikel
|
| 6 |
Bulk-limited conduction of Ge-implanted thermally grown SiO2 layers
|
Zhao, J
|
|
2002
|
46 |
5 |
p. 661-664
4 p.
|
artikel
|
| 7 |
Current–voltage characteristics of an integrated Schottky diode
|
Tarplee, M
|
|
2002
|
46 |
5 |
p. 753-757
5 p.
|
artikel
|
| 8 |
DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE
|
Lee, C
|
|
2002
|
46 |
5 |
p. 743-746
4 p.
|
artikel
|
| 9 |
De-embedding length-dependent edge-leakage current in shallow trench isolation submicron MOSFETs
|
Zhou, X
|
|
2002
|
46 |
5 |
p. 769-772
4 p.
|
artikel
|
| 10 |
Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors
|
Lee, J.W.
|
|
2002
|
46 |
5 |
p. 773-775
3 p.
|
artikel
|
| 11 |
Device simulation of surface quantization effect on MOSFETs with simplified density-gradient method
|
Matsuzawa, Kazuya
|
|
2002
|
46 |
5 |
p. 747-751
5 p.
|
artikel
|
| 12 |
Effect of plasma enhanced chemical vapor deposition of SiN x on n-GaN Schottky rectifiers
|
Luo, B.
|
|
2002
|
46 |
5 |
p. 705-710
6 p.
|
artikel
|
| 13 |
Electric field effects associated with the backside Ge profile in SiGe HBTs
|
Zhang, Gang
|
|
2002
|
46 |
5 |
p. 655-659
5 p.
|
artikel
|
| 14 |
Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method
|
Ferhat-Hamida, A.
|
|
2002
|
46 |
5 |
p. 615-619
5 p.
|
artikel
|
| 15 |
Fabrication of AlGaN/GaN heterostructure field effect transistor using room-temperature ohmic contact
|
Jeon, Chang Min
|
|
2002
|
46 |
5 |
p. 695-698
4 p.
|
artikel
|
| 16 |
Field programmable spin-logic realized with tunnelling-magnetoresistance devices
|
Richter, R.
|
|
2002
|
46 |
5 |
p. 639-643
5 p.
|
artikel
|
| 17 |
Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
|
Mehandru, R.
|
|
2002
|
46 |
5 |
p. 699-704
6 p.
|
artikel
|
| 18 |
Morphological study of the Al–Ti ohmic contact to p-type SiC
|
Mohney, S.E.
|
|
2002
|
46 |
5 |
p. 689-693
5 p.
|
artikel
|
| 19 |
Optimization of gas flow and etch depth uniformity for plasma etching of large area GaAs wafers
|
Lee, J.W.
|
|
2002
|
46 |
5 |
p. 685-688
4 p.
|
artikel
|
| 20 |
Reduction of dark current in an n-type In0.3Ga0.7As/GaAs quantum well infrared photodetector by using a camel diode structure
|
Park, Jinsung
|
|
2002
|
46 |
5 |
p. 651-654
4 p.
|
artikel
|
| 21 |
Scaling of pseudomorphic high electron mobility transistors to decanano dimensions
|
Kalna, K.
|
|
2002
|
46 |
5 |
p. 631-638
8 p.
|
artikel
|
| 22 |
Study on ZnSnO3 sensitive material based on combustible gases
|
Wu, Xing-Hui
|
|
2002
|
46 |
5 |
p. 715-719
5 p.
|
artikel
|
| 23 |
Substrate-triggered ESD clamp devices for use in power-rail ESD clamp circuits
|
Ker, Ming-Dou
|
|
2002
|
46 |
5 |
p. 721-734
14 p.
|
artikel
|
| 24 |
The effects of scaling on the performance of small-signal MOS amplifiers
|
Fiegna, Claudio
|
|
2002
|
46 |
5 |
p. 675-683
9 p.
|
artikel
|
| 25 |
The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET
|
Ren, Hongxia
|
|
2002
|
46 |
5 |
p. 665-673
9 p.
|
artikel
|
| 26 |
Transient response of highly doped thin channel GaN metal–semiconductor and metal-oxide–semiconductor field effect transistors
|
Pala, N.
|
|
2002
|
46 |
5 |
p. 711-714
4 p.
|
artikel
|
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