Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors
Titel:
Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors
Auteur:
Lee, J.W. Jeon, M.H. Cho, G.S. Yim, H.C. Chang, S.K. Kim, K.K. Devre, M. Johnson, D. Sasserath, J.N. Pearton, S.J.