| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A critical review of thermal models for electro-thermal simulation
|
d'Alessandro, V.
|
|
2002
|
46 |
4 |
p. 487-496
10 p.
|
artikel
|
| 2 |
An investigation on RF CMOS stability related to bias and scaling
|
Su, Jiong-Guang
|
|
2002
|
46 |
4 |
p. 451-458
8 p.
|
artikel
|
| 3 |
Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI
|
Benson, James
|
|
2002
|
46 |
4 |
p. 529-537
9 p.
|
artikel
|
| 4 |
Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method
|
Ichimura, Masaya
|
|
2002
|
46 |
4 |
p. 545-553
9 p.
|
artikel
|
| 5 |
Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire
|
Johnson, J.W
|
|
2002
|
46 |
4 |
p. 513-523
11 p.
|
artikel
|
| 6 |
Comparison of the electrical behavior in the subthreshold region between laser and solid phase crystallized polysilicon thin film transistors
|
Pichon, L.
|
|
2002
|
46 |
4 |
p. 459-466
8 p.
|
artikel
|
| 7 |
Current rise time constants in switch-on process of SiC thyristors
|
Mnatsakanov, Tigran T
|
|
2002
|
46 |
4 |
p. 525-528
4 p.
|
artikel
|
| 8 |
Determination of semiconductor resistance under a contact
|
Ahmad, M.
|
|
2002
|
46 |
4 |
p. 505-512
8 p.
|
artikel
|
| 9 |
DX centers in Si-doped In x Al1−x As (0.3⩽x⩽0.5)
|
Isler, Mark
|
|
2002
|
46 |
4 |
p. 585-588
4 p.
|
artikel
|
| 10 |
Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs
|
Ivanov, Pavel A
|
|
2002
|
46 |
4 |
p. 567-572
6 p.
|
artikel
|
| 11 |
Full-band matrix solution of the Boltzmann transport equation and electron impact ionization in GaAs
|
Cavassilas, Nicolas
|
|
2002
|
46 |
4 |
p. 559-566
8 p.
|
artikel
|
| 12 |
Generalization of Moll–Ross relations for heterojunction bipolar transistors
|
Mohammad, S.Noor
|
|
2002
|
46 |
4 |
p. 589-591
3 p.
|
artikel
|
| 13 |
High breakdown M–I–M structures on bulk AlN
|
Luo, B
|
|
2002
|
46 |
4 |
p. 573-576
4 p.
|
artikel
|
| 14 |
High-gain MOS tunnel emitter transistors
|
Aderstedt, Erik
|
|
2002
|
46 |
4 |
p. 497-500
4 p.
|
artikel
|
| 15 |
High-speed InGaP/InGaAsN/GaAs NpN double heterojunction bipolar transistors with low turn-on voltage
|
Chang, P.C
|
|
2002
|
46 |
4 |
p. 581-584
4 p.
|
artikel
|
| 16 |
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
|
Chen, C.H.
|
|
2002
|
46 |
4 |
p. 597-599
3 p.
|
artikel
|
| 17 |
Modeling of direct tunneling for thin SiO2 film on n-type Si(100) by WKB method considering the quantum effect in the accumulation layer
|
Matsuo, Naoto
|
|
2002
|
46 |
4 |
p. 577-579
3 p.
|
artikel
|
| 18 |
Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching
|
Wen, T.C
|
|
2002
|
46 |
4 |
p. 555-558
4 p.
|
artikel
|
| 19 |
Observation of photoinduced shot noise in planar Mo/n-Si/Mo structures with undepleted region
|
Niemcharoen, S.
|
|
2002
|
46 |
4 |
p. 481-485
5 p.
|
artikel
|
| 20 |
Organic light-emitting diode on indium zinc oxide film prepared by ion assisted deposition dc sputtering system
|
Lee, W.J
|
|
2002
|
46 |
4 |
p. 477-480
4 p.
|
artikel
|
| 21 |
Quantitative analysis of high frequency performance of modified Darlington pair
|
Sayed ElAhl, A.M.H
|
|
2002
|
46 |
4 |
p. 593-595
3 p.
|
artikel
|
| 22 |
Release of multi-layer metal structure in MEMS devices by dry etching technique
|
Das, N.C
|
|
2002
|
46 |
4 |
p. 501-504
4 p.
|
artikel
|
| 23 |
Simple determination of the profile of bulk generation lifetime in semiconductor
|
Ding, Koubao
|
|
2002
|
46 |
4 |
p. 601-603
3 p.
|
artikel
|
| 24 |
Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3
|
Luo, B
|
|
2002
|
46 |
4 |
p. 467-476
10 p.
|
artikel
|
| 25 |
The 1.3–1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application
|
Chen, C.H.
|
|
2002
|
46 |
4 |
p. 539-544
6 p.
|
artikel
|
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