| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A delay model for DRAM bit lines with step and ramp word line signals
|
Lin, Hongchin
|
|
2002
|
46 |
1 |
p. 145-151
7 p.
|
artikel
|
| 2 |
Analysis of I–V measurements on Ag/p-SnS and Ag/p-SnSe Schottky barriers
|
Şafak, Haluk
|
|
2002
|
46 |
1 |
p. 49-52
4 p.
|
artikel
|
| 3 |
Analysis of lifetime control in high-voltage IGBTs
|
Yuan, X
|
|
2002
|
46 |
1 |
p. 75-81
7 p.
|
artikel
|
| 4 |
Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling
|
Li, P.W
|
|
2002
|
46 |
1 |
p. 39-44
6 p.
|
artikel
|
| 5 |
An analytical expression for predicting wearout lifetime of thin gate and tunneling oxide
|
Xu, Mingzhen
|
|
2002
|
46 |
1 |
p. 115-121
7 p.
|
artikel
|
| 6 |
A novel double heterojunction bipolar with composite collector
|
Hsin, Yue-Ming
|
|
2002
|
46 |
1 |
p. 139-143
5 p.
|
artikel
|
| 7 |
Carrier transport and luminescence in composite organic–inorganic light-emitting devices
|
Shik, Alexander
|
|
2002
|
46 |
1 |
p. 61-68
8 p.
|
artikel
|
| 8 |
Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor
|
Tsai, Jung-Hui
|
|
2002
|
46 |
1 |
p. 45-48
4 p.
|
artikel
|
| 9 |
Characterization of crosstalk between CMOS photodiodes
|
Brouk, I
|
|
2002
|
46 |
1 |
p. 53-59
7 p.
|
artikel
|
| 10 |
Dimensional effects in CMOS photodiodes
|
Brouk, Igor
|
|
2002
|
46 |
1 |
p. 19-28
10 p.
|
artikel
|
| 11 |
Extended eigenfunctions in asymmetric double triangular quantum wells in weak electric fields
|
Santiago, Rosana B.
|
|
2002
|
46 |
1 |
p. 89-96
8 p.
|
artikel
|
| 12 |
Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC
|
Crofton, J.
|
|
2002
|
46 |
1 |
p. 109-113
5 p.
|
artikel
|
| 13 |
GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage
|
Welty, R.J
|
|
2002
|
46 |
1 |
p. 1-5
5 p.
|
artikel
|
| 14 |
Low-frequency noise characteristics of metamorphic In0.52Al0.48As/In0.60Ga0.40As double-heterostructure pseudomorphic high electron mobility transistors grown on a GaAs substrate
|
Kim, Jeong Hoon
|
|
2002
|
46 |
1 |
p. 69-73
5 p.
|
artikel
|
| 15 |
Modeling inversion-layer carrier mobilities in all regions of MOSFET operation
|
Remashan, K
|
|
2002
|
46 |
1 |
p. 153-156
4 p.
|
artikel
|
| 16 |
Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow
|
Walkey, David J.
|
|
2002
|
46 |
1 |
p. 7-17
11 p.
|
artikel
|
| 17 |
New method for determination of harmonic distortion in SOI FD transistors
|
Cerdeira, A
|
|
2002
|
46 |
1 |
p. 103-108
6 p.
|
artikel
|
| 18 |
Plasma extraction transit time oscillations in bipolar power devices
|
Gutsmann, Bernd
|
|
2002
|
46 |
1 |
p. 133-138
6 p.
|
artikel
|
| 19 |
Properties of AlGaAs/GaAs heterojunction bipolar transistor with AlGaAs ledge bypass capacitor
|
Oh, T.K.
|
|
2002
|
46 |
1 |
p. 35-38
4 p.
|
artikel
|
| 20 |
Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations
|
Sellai, A.
|
|
2002
|
46 |
1 |
p. 29-33
5 p.
|
artikel
|
| 21 |
Recombination properties of electronic states in porous silicon
|
Brodovoy, O.V
|
|
2002
|
46 |
1 |
p. 83-87
5 p.
|
artikel
|
| 22 |
Research on n+p type oxygen sensor
|
Wu, Xing-Hui
|
|
2002
|
46 |
1 |
p. 97-101
5 p.
|
artikel
|
| 23 |
Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices
|
Buot, F.A
|
|
2002
|
46 |
1 |
p. 123-131
9 p.
|
artikel
|
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