| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon
|
Brody, Jed
|
|
2001
|
45 |
9 |
p. 1549-1557
9 p.
|
article
|
| 2 |
A new analytical model for amorphous-silicon thin-film transistors including tail and deep states
|
Colalongo, L.
|
|
2001
|
45 |
9 |
p. 1525-1530
6 p.
|
article
|
| 3 |
Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices
|
Sheu, J.K.
|
|
2001
|
45 |
9 |
p. 1665-1671
7 p.
|
article
|
| 4 |
Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors
|
Luo, B.
|
|
2001
|
45 |
9 |
p. 1613-1624
12 p.
|
article
|
| 5 |
Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs
|
Luo, B.
|
|
2001
|
45 |
9 |
p. 1625-1638
14 p.
|
article
|
| 6 |
Design and analysis of a new self-aligned asymmetric structure for deep sub-micrometer MOSFET
|
Choi, Chang-Soon
|
|
2001
|
45 |
9 |
p. 1673-1678
6 p.
|
article
|
| 7 |
Design of single and multiple zone junction termination extension structures for SiC power devices
|
Sheridan, David C.
|
|
2001
|
45 |
9 |
p. 1659-1664
6 p.
|
article
|
| 8 |
Effect of annealing on electrical properties of Pt/β-SiC contact
|
Na, Hoon Joo
|
|
2001
|
45 |
9 |
p. 1565-1570
6 p.
|
article
|
| 9 |
Energy-band parameters at the GaAs– and GaN–Ga2O3(Gd2O3) interfaces
|
Lay, T.S.
|
|
2001
|
45 |
9 |
p. 1679-1682
4 p.
|
article
|
| 10 |
Erratum to “Thermal analysis of solid-state devices and circuits: an analytical approach” [Solid-State Electronics 44 (10) 1789–1798]
|
Rinaldi, N
|
|
2001
|
45 |
9 |
p. 1703-
1 p.
|
article
|
| 11 |
Experimental evaluation of device degradation subject to oxide soft breakdown
|
Zhang, J
|
|
2001
|
45 |
9 |
p. 1521-1524
4 p.
|
article
|
| 12 |
Forward characteristics of P+PN+ and P+NN+ diodes on 6H-SiC
|
Zhang, Q.
|
|
2001
|
45 |
9 |
p. 1559-1563
5 p.
|
article
|
| 13 |
High-Q microphotonic electro-optic modulator
|
Cohen, D.A.
|
|
2001
|
45 |
9 |
p. 1577-1589
13 p.
|
article
|
| 14 |
Insight into the relationship between hot electron degradation and substrate current in sub-0.1 μm technologies
|
Ghetti, Andrea
|
|
2001
|
45 |
9 |
p. 1591-1595
5 p.
|
article
|
| 15 |
Issues concerning the preparation of ohmic contacts to n-GaN
|
Pelto, Christopher M.
|
|
2001
|
45 |
9 |
p. 1597-1605
9 p.
|
article
|
| 16 |
Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor
|
Kim, Jeong Hoon
|
|
2001
|
45 |
9 |
p. 1571-1576
6 p.
|
article
|
| 17 |
Metal/PS/c-Si photodetectors based on unoxidized and oxidized porous silicon
|
Balagurov, L.A
|
|
2001
|
45 |
9 |
p. 1607-1611
5 p.
|
article
|
| 18 |
Minority carrier transport in GaN and related materials
|
Chernyak, Leonid
|
|
2001
|
45 |
9 |
p. 1687-1702
16 p.
|
article
|
| 19 |
On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal
|
Sankin, I.
|
|
2001
|
45 |
9 |
p. 1653-1657
5 p.
|
article
|
| 20 |
Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs
|
Hobson, W.S
|
|
2001
|
45 |
9 |
p. 1639-1644
6 p.
|
article
|
| 21 |
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
|
Chen, Yung-Chieh
|
|
2001
|
45 |
9 |
p. 1531-1536
6 p.
|
article
|
| 22 |
Understanding of etch mechanism and etch depth distribution in inductively coupled plasma etching of GaAs
|
Lee, J.W.
|
|
2001
|
45 |
9 |
p. 1683-1686
4 p.
|
article
|
| 23 |
Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator
|
Karmalkar, Shreepad
|
|
2001
|
45 |
9 |
p. 1645-1652
8 p.
|
article
|
| 24 |
Worst-case analysis and statistical simulation of MOSFET devices based on parametric test data
|
Zhang, Qiang
|
|
2001
|
45 |
9 |
p. 1537-1547
11 p.
|
article
|
Journal description