| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A general-purpose software for optical characterization of thin films: specific features for microelectronic applications
|
Bosch, S.
|
|
2001
|
45 |
5 |
p. 703-709
7 p.
|
artikel
|
| 2 |
Analysis of reliability of AlGaAs/GaAs HBTs based on device simulation
|
Tan, Y
|
|
2001
|
45 |
5 |
p. 727-734
8 p.
|
artikel
|
| 3 |
A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region
|
Ortiz-Conde, Adelmo
|
|
2001
|
45 |
5 |
p. 663-667
5 p.
|
artikel
|
| 4 |
A study into the broadening of the quantized inversion layer states in deep submicron MOSFETs
|
Rahman, A.
|
|
2001
|
45 |
5 |
p. 755-760
6 p.
|
artikel
|
| 5 |
A word from the new Editor
|
Cristoloveanu, Sorin
|
|
2001
|
45 |
5 |
p. 633-634
2 p.
|
artikel
|
| 6 |
Band gap narrowing in strained Si1ā x Ge x base on (001) Si substrate
|
Jin, Hai-Yan
|
|
2001
|
45 |
5 |
p. 697-702
6 p.
|
artikel
|
| 7 |
Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs
|
Oxley, C.H
|
|
2001
|
45 |
5 |
p. 677-682
6 p.
|
artikel
|
| 8 |
Characterization of MOSFETs fabricated on large-grain polysilicon on insulator
|
Jagar, Singh
|
|
2001
|
45 |
5 |
p. 743-749
7 p.
|
artikel
|
| 9 |
Dielectric loss and related noise of pyroelectric modified lead titanate arrays
|
Leonov, V.N
|
|
2001
|
45 |
5 |
p. 735-741
7 p.
|
artikel
|
| 10 |
Electrical and gas-sensing properties of WO3 semiconductor material
|
Yu-De, Wang
|
|
2001
|
45 |
5 |
p. 639-644
6 p.
|
artikel
|
| 11 |
Estimation of hole mobility in strained Si1ā x Ge x buried channel heterostructure PMOSFET
|
Kar, G.S
|
|
2001
|
45 |
5 |
p. 669-676
8 p.
|
artikel
|
| 12 |
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
|
Huang, D.
|
|
2001
|
45 |
5 |
p. 711-715
5 p.
|
artikel
|
| 13 |
Impact-ionization-induced avalanche multiplication effect and Early effect in the selectively implanted collector nāpān bipolar junction transistors
|
Yu-Kwen Su, Alex
|
|
2001
|
45 |
5 |
p. 761-765
5 p.
|
artikel
|
| 14 |
Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices
|
Kuo, C.H
|
|
2001
|
45 |
5 |
p. 717-720
4 p.
|
artikel
|
| 15 |
Numerical analysis for the effects of SiO2/Si interface roughness on quantum oscillations in ultrathin MOSFETs
|
Mao, Lingfeng
|
|
2001
|
45 |
5 |
p. 773-776
4 p.
|
artikel
|
| 16 |
Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method
|
Wu, Jau-Yi
|
|
2001
|
45 |
5 |
p. 635-638
4 p.
|
artikel
|
| 17 |
Silicon controlled recitfiers type electrostatic discharge protection circuits with variable holding voltage
|
Jang, Sheng-Lyang
|
|
2001
|
45 |
5 |
p. 689-696
8 p.
|
artikel
|
| 18 |
Simulation of electron storage in Ge/Si hetero-nanocrystal memory
|
Yang, H.G.
|
|
2001
|
45 |
5 |
p. 767-771
5 p.
|
artikel
|
| 19 |
Study of the leakage drain current carriers in silicon-on-insulator MOSFETs at high temperatures
|
Bellodi, Marcello
|
|
2001
|
45 |
5 |
p. 683-688
6 p.
|
artikel
|
| 20 |
The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs
|
Bertilsson, K
|
|
2001
|
45 |
5 |
p. 645-653
9 p.
|
artikel
|
| 21 |
The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs
|
Suliman, S.A.
|
|
2001
|
45 |
5 |
p. 655-661
7 p.
|
artikel
|
| 22 |
The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
|
Cao, Xin
|
|
2001
|
45 |
5 |
p. 751-754
4 p.
|
artikel
|
| 23 |
Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown
|
Baca, A.G
|
|
2001
|
45 |
5 |
p. 721-725
5 p.
|
artikel
|
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