|
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy |
|
|
|
Title: |
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy |
Author: |
Huang, D. Yun, F. Reshchikov, M.A. Wang, D. Morkoç, H. Rode, D.L. Farina, L.A. Kurdak, Ç. Tsen, K.T. Park, S.S. Lee, K.Y. |
Appeared in: |
Solid-state electronics |
Paging: |
Volume 45 (2001) nr. 5 pages 5 p. |
Year: |
2001 |
Contents: |
|
Publisher: |
Elsevier Science Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|