| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A physical compact model for direct tunneling from NMOS inversion layers
|
Clerc, R.
|
|
2001
|
45 |
10 |
p. 1705-1716
12 p.
|
artikel
|
| 2 |
A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique
|
Mahapatra, S
|
|
2001
|
45 |
10 |
p. 1717-1723
7 p.
|
artikel
|
| 3 |
A two dimensional analytical model for the current distribution in a lateral IGBT
|
Henkel, Ingo
|
|
2001
|
45 |
10 |
p. 1725-1732
8 p.
|
artikel
|
| 4 |
Design considerations for buried p-layers to suppress substrate-trapping effects in GaAs MESFETs
|
Kunihiro, Kazuaki
|
|
2001
|
45 |
10 |
p. 1763-1771
9 p.
|
artikel
|
| 5 |
Design considerations for 25 nm MOSFET devices
|
Saha, Samar
|
|
2001
|
45 |
10 |
p. 1851-1857
7 p.
|
artikel
|
| 6 |
Determination of the Fowler–Nordheim tunneling parameters from the Fowler–Nordheim plot
|
Chiou, Y.L.
|
|
2001
|
45 |
10 |
p. 1787-1791
5 p.
|
artikel
|
| 7 |
Dynamic behavior of scaled microdisk lasers
|
Thiyagarajan, S.M.K.
|
|
2001
|
45 |
10 |
p. 1821-1826
6 p.
|
artikel
|
| 8 |
Electrical effects of N2 plasma exposure on dry-etch damage in p- and n-GaN Schottky diodes
|
Kent, D.G
|
|
2001
|
45 |
10 |
p. 1837-1842
6 p.
|
artikel
|
| 9 |
Growth and characterization of InGaAs/InAlAs quantum cascade lasers
|
Liu, Feng-Qi
|
|
2001
|
45 |
10 |
p. 1831-1835
5 p.
|
artikel
|
| 10 |
Hall effect measurements in double-gate SOI MOSFETs
|
Vandooren, A
|
|
2001
|
45 |
10 |
p. 1793-1798
6 p.
|
artikel
|
| 11 |
High-concentration diffusion profiles of low-energy ion-implanted B, As and BF2 in bulk silicon
|
Suzuki, Kunihiro
|
|
2001
|
45 |
10 |
p. 1747-1751
5 p.
|
artikel
|
| 12 |
Hydrogenation effects on AlGaAs/GaAs heterojunction bipolar transistors
|
Luo, B.
|
|
2001
|
45 |
10 |
p. 1733-1741
9 p.
|
artikel
|
| 13 |
Implication of non-ideality of coupling capacitors in the performance of multistage amplifiers
|
Fahmi, M.M.E
|
|
2001
|
45 |
10 |
p. 1843-1845
3 p.
|
artikel
|
| 14 |
Investigation of degeneracy of current–voltage characteristics of asymmetrical IGBT with n-buffer layer concentration
|
Khanna, V.K.
|
|
2001
|
45 |
10 |
p. 1859-1865
7 p.
|
artikel
|
| 15 |
Lateral current spreading in SiC Schottky diodes using metal overlap edge termination
|
Zhang, Q.
|
|
2001
|
45 |
10 |
p. 1847-1850
4 p.
|
artikel
|
| 16 |
Modeling of time dependence of hole current and prediction of Q BD and t BD for thin gate MOS devices based upon anode hole injection
|
Quddus, Mohammed T
|
|
2001
|
45 |
10 |
p. 1773-1785
13 p.
|
artikel
|
| 17 |
MOSFET triggering silicon controlled rectifiers for electrostatic discharge protection circuits
|
Jang, Sheng-Lyang
|
|
2001
|
45 |
10 |
p. 1799-1803
5 p.
|
artikel
|
| 18 |
Non-local microscopic view of signal propagation times in BJTs biased up to high currents
|
Palestri, P.
|
|
2001
|
45 |
10 |
p. 1753-1761
9 p.
|
artikel
|
| 19 |
On the structure of the recessed-channel MOSFET for sub-100 nm Si CMOS
|
Tao, Meng
|
|
2001
|
45 |
10 |
p. 1805-1808
4 p.
|
artikel
|
| 20 |
Phase-locking of an InP/InGaP/InGaAs resonant tunneling diode relaxation oscillator by direct optical injection
|
Kahn, M.
|
|
2001
|
45 |
10 |
p. 1827-1830
4 p.
|
artikel
|
| 21 |
Properties of HgCdTe crystals passivated by A2B6 layers
|
Virt, I
|
|
2001
|
45 |
10 |
p. 1743-1746
4 p.
|
artikel
|
| 22 |
The n+n combined structure gas sensor based on burnable gases
|
Yude, Wang
|
|
2001
|
45 |
10 |
p. 1809-1813
5 p.
|
artikel
|
| 23 |
Voltage dependence of photocurrent in metal–semiconductor–metal structures under front-illuminated conditions
|
Niemcharoen, S
|
|
2001
|
45 |
10 |
p. 1815-1819
5 p.
|
artikel
|
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