nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
A ‘channel’ design using single, semiconductor nanocrystals for efficient (opto)electronic devices
|
Salafsky, J.S. |
|
2001 |
45 |
1 |
p. 53-58 6 p. |
artikel |
2 |
A dynamic n-buffer insulated gate bipolar transistor
|
Huang, S |
|
2001 |
45 |
1 |
p. 173-182 10 p. |
artikel |
3 |
Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates
|
Lukasiak, L. |
|
2001 |
45 |
1 |
p. 95-100 6 p. |
artikel |
4 |
Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring
|
He, Jin |
|
2001 |
45 |
1 |
p. 79-85 7 p. |
artikel |
5 |
An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions
|
Ma, Pingxi |
|
2001 |
45 |
1 |
p. 159-167 9 p. |
artikel |
6 |
A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application
|
Chen, Chung-Hui |
|
2001 |
45 |
1 |
p. 199-203 5 p. |
artikel |
7 |
A physically-based semi-empirical effective mobility model for MOSFET compact I–V modeling
|
Lim, K.Y. |
|
2001 |
45 |
1 |
p. 193-197 5 p. |
artikel |
8 |
A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs
|
Juang, M.H |
|
2001 |
45 |
1 |
p. 169-172 4 p. |
artikel |
9 |
Barrier capability of TaN x films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaN x /n+–p junction diodes
|
Yang, Wen Luh |
|
2001 |
45 |
1 |
p. 149-158 10 p. |
artikel |
10 |
Channel engineering using RTA prior to the gate oxidation for high density DRAM with single gate CMOS technology
|
Son, Jeong-Hwan |
|
2001 |
45 |
1 |
p. 7-12 6 p. |
artikel |
11 |
Comparison of MOSFET-threshold-voltage extraction methods
|
Terada, Kazuo |
|
2001 |
45 |
1 |
p. 35-40 6 p. |
artikel |
12 |
Current model considering oxide thickness non-uniformity in a MOS tunnel structure
|
Vexler, M.I. |
|
2001 |
45 |
1 |
p. 19-25 7 p. |
artikel |
13 |
Design considerations in scaled SONOS nonvolatile memory devices
|
Bu, Jiankang |
|
2001 |
45 |
1 |
p. 113-120 8 p. |
artikel |
14 |
Editorial
|
Klaassen, F.M |
|
2001 |
45 |
1 |
p. 3- 1 p. |
artikel |
15 |
Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
|
Hwang, Chuan-Chou |
|
2001 |
45 |
1 |
p. 121-125 5 p. |
artikel |
16 |
Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices
|
Bu, Jiankang |
|
2001 |
45 |
1 |
p. 47-51 5 p. |
artikel |
17 |
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
|
Hudait, M.K |
|
2001 |
45 |
1 |
p. 133-141 9 p. |
artikel |
18 |
Emitter structure of power heterojunction bipolar transistor for enhancement of thermal stability
|
Lee, J.G. |
|
2001 |
45 |
1 |
p. 27-33 7 p. |
artikel |
19 |
Experimental investigation of factors influencing design of small-signal CMOS amplifiers
|
Vernon, Emerson |
|
2001 |
45 |
1 |
p. 63-69 7 p. |
artikel |
20 |
Extraction of Schottky diode parameters with a bias dependent barrier height
|
Mikhelashvili, V. |
|
2001 |
45 |
1 |
p. 143-148 6 p. |
artikel |
21 |
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs
|
Niu, Guofu |
|
2001 |
45 |
1 |
p. 107-112 6 p. |
artikel |
22 |
Inductively coupled high-density plasma-induced etch damage of GaN MESFETs
|
Shul, R.J |
|
2001 |
45 |
1 |
p. 13-17 5 p. |
artikel |
23 |
List of Reviewers
|
|
|
2001 |
45 |
1 |
p. 5-6 2 p. |
artikel |
24 |
Low dark current far infrared detector with an optical cavity architecture
|
Korotkov, A.L |
|
2001 |
45 |
1 |
p. 87-93 7 p. |
artikel |
25 |
Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices
|
Ngw, C.K. |
|
2001 |
45 |
1 |
p. 127-132 6 p. |
artikel |
26 |
Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices
|
Katto, H. |
|
2001 |
45 |
1 |
p. 101-105 5 p. |
artikel |
27 |
Publisher's note
|
|
|
2001 |
45 |
1 |
p. 1- 1 p. |
artikel |
28 |
The breakdown voltage of unguarded and field plate guarded silicon detector diodes
|
Beck, G.A. |
|
2001 |
45 |
1 |
p. 183-191 9 p. |
artikel |
29 |
The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology
|
Luther-King, N |
|
2001 |
45 |
1 |
p. 71-77 7 p. |
artikel |
30 |
Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems
|
Wu, W. |
|
2001 |
45 |
1 |
p. 59-62 4 p. |
artikel |
31 |
Ultimate parameters of Hg1– x Cd x Te and InAs1– x Sb x n+–p photodiodes
|
Niedziela, T |
|
2001 |
45 |
1 |
p. 41-46 6 p. |
artikel |