| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A ‘channel’ design using single, semiconductor nanocrystals for efficient (opto)electronic devices
|
Salafsky, J.S.
|
|
2001
|
45 |
1 |
p. 53-58
6 p.
|
artikel
|
| 2 |
A dynamic n-buffer insulated gate bipolar transistor
|
Huang, S
|
|
2001
|
45 |
1 |
p. 173-182
10 p.
|
artikel
|
| 3 |
Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates
|
Lukasiak, L.
|
|
2001
|
45 |
1 |
p. 95-100
6 p.
|
artikel
|
| 4 |
Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring
|
He, Jin
|
|
2001
|
45 |
1 |
p. 79-85
7 p.
|
artikel
|
| 5 |
An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions
|
Ma, Pingxi
|
|
2001
|
45 |
1 |
p. 159-167
9 p.
|
artikel
|
| 6 |
A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application
|
Chen, Chung-Hui
|
|
2001
|
45 |
1 |
p. 199-203
5 p.
|
artikel
|
| 7 |
A physically-based semi-empirical effective mobility model for MOSFET compact I–V modeling
|
Lim, K.Y.
|
|
2001
|
45 |
1 |
p. 193-197
5 p.
|
artikel
|
| 8 |
A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs
|
Juang, M.H
|
|
2001
|
45 |
1 |
p. 169-172
4 p.
|
artikel
|
| 9 |
Barrier capability of TaN x films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaN x /n+–p junction diodes
|
Yang, Wen Luh
|
|
2001
|
45 |
1 |
p. 149-158
10 p.
|
artikel
|
| 10 |
Channel engineering using RTA prior to the gate oxidation for high density DRAM with single gate CMOS technology
|
Son, Jeong-Hwan
|
|
2001
|
45 |
1 |
p. 7-12
6 p.
|
artikel
|
| 11 |
Comparison of MOSFET-threshold-voltage extraction methods
|
Terada, Kazuo
|
|
2001
|
45 |
1 |
p. 35-40
6 p.
|
artikel
|
| 12 |
Current model considering oxide thickness non-uniformity in a MOS tunnel structure
|
Vexler, M.I.
|
|
2001
|
45 |
1 |
p. 19-25
7 p.
|
artikel
|
| 13 |
Design considerations in scaled SONOS nonvolatile memory devices
|
Bu, Jiankang
|
|
2001
|
45 |
1 |
p. 113-120
8 p.
|
artikel
|
| 14 |
Editorial
|
Klaassen, F.M
|
|
2001
|
45 |
1 |
p. 3-
1 p.
|
artikel
|
| 15 |
Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature
|
Hwang, Chuan-Chou
|
|
2001
|
45 |
1 |
p. 121-125
5 p.
|
artikel
|
| 16 |
Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices
|
Bu, Jiankang
|
|
2001
|
45 |
1 |
p. 47-51
5 p.
|
artikel
|
| 17 |
Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures
|
Hudait, M.K
|
|
2001
|
45 |
1 |
p. 133-141
9 p.
|
artikel
|
| 18 |
Emitter structure of power heterojunction bipolar transistor for enhancement of thermal stability
|
Lee, J.G.
|
|
2001
|
45 |
1 |
p. 27-33
7 p.
|
artikel
|
| 19 |
Experimental investigation of factors influencing design of small-signal CMOS amplifiers
|
Vernon, Emerson
|
|
2001
|
45 |
1 |
p. 63-69
7 p.
|
artikel
|
| 20 |
Extraction of Schottky diode parameters with a bias dependent barrier height
|
Mikhelashvili, V.
|
|
2001
|
45 |
1 |
p. 143-148
6 p.
|
artikel
|
| 21 |
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs
|
Niu, Guofu
|
|
2001
|
45 |
1 |
p. 107-112
6 p.
|
artikel
|
| 22 |
Inductively coupled high-density plasma-induced etch damage of GaN MESFETs
|
Shul, R.J
|
|
2001
|
45 |
1 |
p. 13-17
5 p.
|
artikel
|
| 23 |
List of Reviewers
|
|
|
2001
|
45 |
1 |
p. 5-6
2 p.
|
artikel
|
| 24 |
Low dark current far infrared detector with an optical cavity architecture
|
Korotkov, A.L
|
|
2001
|
45 |
1 |
p. 87-93
7 p.
|
artikel
|
| 25 |
Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices
|
Ngw, C.K.
|
|
2001
|
45 |
1 |
p. 127-132
6 p.
|
artikel
|
| 26 |
Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices
|
Katto, H.
|
|
2001
|
45 |
1 |
p. 101-105
5 p.
|
artikel
|
| 27 |
Publisher's note
|
|
|
2001
|
45 |
1 |
p. 1-
1 p.
|
artikel
|
| 28 |
The breakdown voltage of unguarded and field plate guarded silicon detector diodes
|
Beck, G.A.
|
|
2001
|
45 |
1 |
p. 183-191
9 p.
|
artikel
|
| 29 |
The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology
|
Luther-King, N
|
|
2001
|
45 |
1 |
p. 71-77
7 p.
|
artikel
|
| 30 |
Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems
|
Wu, W.
|
|
2001
|
45 |
1 |
p. 59-62
4 p.
|
artikel
|
| 31 |
Ultimate parameters of Hg1– x Cd x Te and InAs1– x Sb x n+–p photodiodes
|
Niedziela, T
|
|
2001
|
45 |
1 |
p. 41-46
6 p.
|
artikel
|
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