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                             31 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A ‘channel’ design using single, semiconductor nanocrystals for efficient (opto)electronic devices Salafsky, J.S.
2001
45 1 p. 53-58
6 p.
artikel
2 A dynamic n-buffer insulated gate bipolar transistor Huang, S
2001
45 1 p. 173-182
10 p.
artikel
3 Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates Lukasiak, L.
2001
45 1 p. 95-100
6 p.
artikel
4 Analytical model of three-dimensional effect on voltage and edge peak field distributions and optimal space for planar junction with a single field limiting ring He, Jin
2001
45 1 p. 79-85
7 p.
artikel
5 An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions Ma, Pingxi
2001
45 1 p. 159-167
9 p.
artikel
6 A novel multi-level interconnect scheme with air as low K inter-metal dielectric for ultradeep submicron application Chen, Chung-Hui
2001
45 1 p. 199-203
5 p.
artikel
7 A physically-based semi-empirical effective mobility model for MOSFET compact I–V modeling Lim, K.Y.
2001
45 1 p. 193-197
5 p.
artikel
8 A process simplification scheme for fabricating self-aligned silicided trench-gate power MOSFETs Juang, M.H
2001
45 1 p. 169-172
4 p.
artikel
9 Barrier capability of TaN x films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaN x /n+–p junction diodes Yang, Wen Luh
2001
45 1 p. 149-158
10 p.
artikel
10 Channel engineering using RTA prior to the gate oxidation for high density DRAM with single gate CMOS technology Son, Jeong-Hwan
2001
45 1 p. 7-12
6 p.
artikel
11 Comparison of MOSFET-threshold-voltage extraction methods Terada, Kazuo
2001
45 1 p. 35-40
6 p.
artikel
12 Current model considering oxide thickness non-uniformity in a MOS tunnel structure Vexler, M.I.
2001
45 1 p. 19-25
7 p.
artikel
13 Design considerations in scaled SONOS nonvolatile memory devices Bu, Jiankang
2001
45 1 p. 113-120
8 p.
artikel
14 Editorial Klaassen, F.M
2001
45 1 p. 3-
1 p.
artikel
15 Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature Hwang, Chuan-Chou
2001
45 1 p. 121-125
5 p.
artikel
16 Electrical characterization of ONO triple dielectric in SONOS nonvolatile memory devices Bu, Jiankang
2001
45 1 p. 47-51
5 p.
artikel
17 Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures Hudait, M.K
2001
45 1 p. 133-141
9 p.
artikel
18 Emitter structure of power heterojunction bipolar transistor for enhancement of thermal stability Lee, J.G.
2001
45 1 p. 27-33
7 p.
artikel
19 Experimental investigation of factors influencing design of small-signal CMOS amplifiers Vernon, Emerson
2001
45 1 p. 63-69
7 p.
artikel
20 Extraction of Schottky diode parameters with a bias dependent barrier height Mikhelashvili, V.
2001
45 1 p. 143-148
6 p.
artikel
21 Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs Niu, Guofu
2001
45 1 p. 107-112
6 p.
artikel
22 Inductively coupled high-density plasma-induced etch damage of GaN MESFETs Shul, R.J
2001
45 1 p. 13-17
5 p.
artikel
23 List of Reviewers 2001
45 1 p. 5-6
2 p.
artikel
24 Low dark current far infrared detector with an optical cavity architecture Korotkov, A.L
2001
45 1 p. 87-93
7 p.
artikel
25 Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices Ngw, C.K.
2001
45 1 p. 127-132
6 p.
artikel
26 Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices Katto, H.
2001
45 1 p. 101-105
5 p.
artikel
27 Publisher's note 2001
45 1 p. 1-
1 p.
artikel
28 The breakdown voltage of unguarded and field plate guarded silicon detector diodes Beck, G.A.
2001
45 1 p. 183-191
9 p.
artikel
29 The 6.5 kV clustered insulated gate bipolar transistor in homogeneous base technology Luther-King, N
2001
45 1 p. 71-77
7 p.
artikel
30 Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems Wu, W.
2001
45 1 p. 59-62
4 p.
artikel
31 Ultimate parameters of Hg1– x Cd x Te and InAs1– x Sb x n+–p photodiodes Niedziela, T
2001
45 1 p. 41-46
6 p.
artikel
                             31 gevonden resultaten
 
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