| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytic modeling of the subthreshold behavior in MOSFET
|
Liu, C.W.
|
|
2000
|
44 |
9 |
p. 1707-1710
4 p.
|
artikel
|
| 2 |
A new charge model including quantum mechanical effects in MOS structure inversion layer
|
Ma, Yutao
|
|
2000
|
44 |
9 |
p. 1697-1702
6 p.
|
artikel
|
| 3 |
A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor
|
Lee, Ching-Sung
|
|
2000
|
44 |
9 |
p. 1635-1640
6 p.
|
artikel
|
| 4 |
An ultra-thin midgap gate FDSOI MOSFET
|
Shang, Huiling
|
|
2000
|
44 |
9 |
p. 1621-1625
5 p.
|
artikel
|
| 5 |
Breakdown mechanism of Al2O3 based metal-to-metal antifuses
|
Li, Wei-Tang
|
|
2000
|
44 |
9 |
p. 1557-1562
6 p.
|
artikel
|
| 6 |
Breakdown of transistors in Marx bank circuit
|
Chatterjee, Amitabh
|
|
2000
|
44 |
9 |
p. 1679-1684
6 p.
|
artikel
|
| 7 |
Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
|
Lachab, M
|
|
2000
|
44 |
9 |
p. 1669-1677
9 p.
|
artikel
|
| 8 |
Characterization of tunneling current in ultra-thin gate oxide
|
Ghetti, Andrea
|
|
2000
|
44 |
9 |
p. 1523-1531
9 p.
|
artikel
|
| 9 |
Conduction-band deformation effect on stress-induced leakage current
|
Duan, Xiaodong
|
|
2000
|
44 |
9 |
p. 1703-1706
4 p.
|
artikel
|
| 10 |
Consequences of space dependence of effective mass in quantum dots
|
Borovitskaya, Elena
|
|
2000
|
44 |
9 |
p. 1609-1612
4 p.
|
artikel
|
| 11 |
Cycling effects in nitrogen doped tetrahedral amorphous carbon non-volatile memory cells
|
Gerstner, E.G
|
|
2000
|
44 |
9 |
p. 1641-1645
5 p.
|
artikel
|
| 12 |
Effects of O2/N2O-plasma treatment on nitride films on strained Si
|
Bera, L.K
|
|
2000
|
44 |
9 |
p. 1533-1536
4 p.
|
artikel
|
| 13 |
Electron transport in a model Si transistor
|
Banoo, K.
|
|
2000
|
44 |
9 |
p. 1689-1695
7 p.
|
artikel
|
| 14 |
Extracting diffusion length using the single contact electron beam induced current technique
|
Ong, Vincent K.S
|
|
2000
|
44 |
9 |
p. 1585-1590
6 p.
|
artikel
|
| 15 |
Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors
|
Orpella, A
|
|
2000
|
44 |
9 |
p. 1543-1548
6 p.
|
artikel
|
| 16 |
High performance gated lateral polysilicon PIN diodes
|
Stewart, Mark
|
|
2000
|
44 |
9 |
p. 1613-1619
7 p.
|
artikel
|
| 17 |
Inverse C–V profiling technique for heterostructure semiconductor devices taking account of two-dimensional quantization effect
|
Kikuchi, N.
|
|
2000
|
44 |
9 |
p. 1663-1668
6 p.
|
artikel
|
| 18 |
Leakage current in PZT films with sputtered RuO x electrodes
|
Law, C.W
|
|
2000
|
44 |
9 |
p. 1569-1571
3 p.
|
artikel
|
| 19 |
0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
|
Zaknoune, M
|
|
2000
|
44 |
9 |
p. 1685-1688
4 p.
|
artikel
|
| 20 |
Modeling gate oxide breakdown under bipolar stress
|
Duan, Xiaodong
|
|
2000
|
44 |
9 |
p. 1537-1541
5 p.
|
artikel
|
| 21 |
Novel four-peak or five-peak current–voltage characteristics for three negative differential resistance devices in series
|
Gan, Kwang-Jow
|
|
2000
|
44 |
9 |
p. 1597-1602
6 p.
|
artikel
|
| 22 |
Novel high sensitivity and selectivity semiconductor gas sensor based on the p+n combined structure
|
Wang, Yu-De
|
|
2000
|
44 |
9 |
p. 1603-1607
5 p.
|
artikel
|
| 23 |
Optimum carrier distribution of the IGBT
|
Sheng, K
|
|
2000
|
44 |
9 |
p. 1573-1583
11 p.
|
artikel
|
| 24 |
Output conductance dispersion and drain current transients in InP-HFETs: observations and equivalent circuit model
|
Gautier-Levine, A.
|
|
2000
|
44 |
9 |
p. 1563-1568
6 p.
|
artikel
|
| 25 |
Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications
|
Monier, C
|
|
2000
|
44 |
9 |
p. 1515-1521
7 p.
|
artikel
|
| 26 |
Spatial distribution of electrical properties in GaN p-i-n rectifiers
|
Polyakov, A.Y
|
|
2000
|
44 |
9 |
p. 1591-1595
5 p.
|
artikel
|
| 27 |
Structural and optical properties of GaN films grown by the direct reaction of Ga and NH3 in a CVD reactor
|
Yang, Seung Hyun
|
|
2000
|
44 |
9 |
p. 1655-1661
7 p.
|
artikel
|
| 28 |
Thermal model for breakdown in p-type hydrogenated amorphous silicon films with coplanar electrodes
|
Avila, A
|
|
2000
|
44 |
9 |
p. 1647-1653
7 p.
|
artikel
|
| 29 |
Transit-time considerations in metal–semiconductor–metal photodiode under high illumination conditions
|
Averine, S.V
|
|
2000
|
44 |
9 |
p. 1627-1634
8 p.
|
artikel
|
| 30 |
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
|
Polyakov, A.Y
|
|
2000
|
44 |
9 |
p. 1549-1555
7 p.
|
artikel
|
Tijdschrift beschrijving