| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current
|
De Salvo, B.
|
|
2000
|
44 |
6 |
p. 895-903
9 p.
|
article
|
| 2 |
A Gummel–Poon model for pnp heterojunction bipolar transistors with a compositionally graded base
|
Datta, S.
|
|
2000
|
44 |
6 |
p. 991-1000
10 p.
|
article
|
| 3 |
An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method
|
Wang, Jinyan
|
|
2000
|
44 |
6 |
p. 959-962
4 p.
|
article
|
| 4 |
A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation
|
Sallese, J.M.
|
|
2000
|
44 |
6 |
p. 887-894
8 p.
|
article
|
| 5 |
A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena
|
Tsai, Jung-Hui
|
|
2000
|
44 |
6 |
p. 1049-1053
5 p.
|
article
|
| 6 |
A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor
|
Yoon, S.F
|
|
2000
|
44 |
6 |
p. 1035-1042
8 p.
|
article
|
| 7 |
Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout
|
Giraldo, A
|
|
2000
|
44 |
6 |
p. 981-989
9 p.
|
article
|
| 8 |
Channel and well design of quarter-micron high performance retrograde well pMOSFETs
|
Toe-Naing, Swe
|
|
2000
|
44 |
6 |
p. 1121-1125
5 p.
|
article
|
| 9 |
Characteristics of an epitaxial Schottky barrier diode for all levels of injection
|
Hassan, M.M.Shahidul
|
|
2000
|
44 |
6 |
p. 1111-1116
6 p.
|
article
|
| 10 |
Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures
|
Yang, Yang (Larr)
|
|
2000
|
44 |
6 |
p. 949-958
10 p.
|
article
|
| 11 |
Circuit model for traveling wave semiconductor laser amplifiers
|
Chen, Weiyou
|
|
2000
|
44 |
6 |
p. 1009-1012
4 p.
|
article
|
| 12 |
Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs
|
Amarasinghe, Nuditha Vibhavie
|
|
2000
|
44 |
6 |
p. 1013-1019
7 p.
|
article
|
| 13 |
Conditions of ion implantation into thin amorphous Si gate layers for suppressing threshold voltage shift
|
Suzuki, Kunihiro
|
|
2000
|
44 |
6 |
p. 1043-1047
5 p.
|
article
|
| 14 |
Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model
|
Katto, Hisao
|
|
2000
|
44 |
6 |
p. 969-976
8 p.
|
article
|
| 15 |
Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes
|
Hudait, Mantu Kumar
|
|
2000
|
44 |
6 |
p. 1089-1097
9 p.
|
article
|
| 16 |
Electrical characterization of Si/Si1−x Ge x /Si quantum well heterostructures using a MOS capacitor
|
Maikap, S.
|
|
2000
|
44 |
6 |
p. 1029-1034
6 p.
|
article
|
| 17 |
Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors
|
Niel, S.
|
|
2000
|
44 |
6 |
p. 963-967
5 p.
|
article
|
| 18 |
Germanium junction field effect transistor for cryogenic applications
|
Das, N.C
|
|
2000
|
44 |
6 |
p. 937-940
4 p.
|
article
|
| 19 |
Graded-channel fully depleted Silicon-On-Insulator nMOSFET for reducing the parasitic bipolar effects
|
Pavanello, Marcelo Antonio
|
|
2000
|
44 |
6 |
p. 917-922
6 p.
|
article
|
| 20 |
Grain and grain-boundary control of the transfer characteristics of large-grain polycrystalline silicon thin-film transistors
|
Farmakis, F.V
|
|
2000
|
44 |
6 |
p. 913-916
4 p.
|
article
|
| 21 |
Hot carrier reliability characteristics of a bend-gate MOSFET
|
Lee, Woosung
|
|
2000
|
44 |
6 |
p. 1117-1119
3 p.
|
article
|
| 22 |
Impact of gate workfunction on device performance at the 50 nm technology node
|
De, Indranil
|
|
2000
|
44 |
6 |
p. 1077-1080
4 p.
|
article
|
| 23 |
Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation
|
Sallese, Jean-Michel
|
|
2000
|
44 |
6 |
p. 905-912
8 p.
|
article
|
| 24 |
Large-signal microwave performance of GaN-based NDR diode oscillators
|
Alekseev, Egor
|
|
2000
|
44 |
6 |
p. 941-947
7 p.
|
article
|
| 25 |
Levelized incomplete LU method and its application to semiconductor device simulation
|
Tsai, Yao-Tsung
|
|
2000
|
44 |
6 |
p. 1069-1075
7 p.
|
article
|
| 26 |
Luminescence of an InGaN/GaN multiple quantum well light-emitting diode
|
Sheu, J.K
|
|
2000
|
44 |
6 |
p. 1055-1058
4 p.
|
article
|
| 27 |
Magnetoelectronic latching Boolean gate
|
Johnson, Mark
|
|
2000
|
44 |
6 |
p. 1099-1104
6 p.
|
article
|
| 28 |
Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs
|
Tan, Changhua
|
|
2000
|
44 |
6 |
p. 1059-1067
9 p.
|
article
|
| 29 |
Stress-induced high-field gate leakage current in ultra-thin gate oxide
|
Wei, Jianlin
|
|
2000
|
44 |
6 |
p. 977-980
4 p.
|
article
|
| 30 |
Technology CAD based statistical simulation of MOSFETs
|
Shigyo, Naoyuki
|
|
2000
|
44 |
6 |
p. 1001-1007
7 p.
|
article
|
| 31 |
The formation of stable ohmic contacts to MBE grown CdTe layers
|
Yousaf, M
|
|
2000
|
44 |
6 |
p. 923-927
5 p.
|
article
|
| 32 |
The indium content in metamorphic In x Al 1−x As/ In x Ga 1−x As HEMTs on GaAs substrate: a new structure parameter
|
Bollaert, S.
|
|
2000
|
44 |
6 |
p. 1021-1027
7 p.
|
article
|
| 33 |
The integration of high-side and low-side LIGBTs on partial silicon-on-insulator
|
Garner, D.M
|
|
2000
|
44 |
6 |
p. 929-935
7 p.
|
article
|
| 34 |
Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors
|
Angelis, C.T.
|
|
2000
|
44 |
6 |
p. 1081-1087
7 p.
|
article
|
| 35 |
Verification of overlap and fringing capacitance models for MOSFETs
|
Wakita, Naoki
|
|
2000
|
44 |
6 |
p. 1105-1109
5 p.
|
article
|
Journal description