| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An equilibrium model for buried SiGe strained layers
|
Fischer, A.
|
|
2000
|
44 |
5 |
p. 869-873
5 p.
|
artikel
|
| 2 |
A spectro-microscopic approach for spatially resolved characterisation of semiconductor structures in PEEM
|
Hoffmann, P
|
|
2000
|
44 |
5 |
p. 837-843
7 p.
|
artikel
|
| 3 |
Cross-sectional STM/STS — a useful tool for identification of dopants in silicon
|
Nuffer, R.
|
|
2000
|
44 |
5 |
p. 875-880
6 p.
|
artikel
|
| 4 |
Crystal growth under heat field rotation conditions
|
Kokh, Alexandr E
|
|
2000
|
44 |
5 |
p. 819-824
6 p.
|
artikel
|
| 5 |
Dopant diffusion during rapid thermal oxidation
|
Stadler, A
|
|
2000
|
44 |
5 |
p. 831-835
5 p.
|
artikel
|
| 6 |
Editorial
|
|
|
2000
|
44 |
5 |
p. v-
1 p.
|
artikel
|
| 7 |
Efficient backup schemes for processors in embedded systems
|
Pflanz, M
|
|
2000
|
44 |
5 |
p. 791-796
6 p.
|
artikel
|
| 8 |
Field effect in organic devices with solution-doped arylamino-poly-(phenylene-vinylene)
|
Scheinert, S.
|
|
2000
|
44 |
5 |
p. 845-853
9 p.
|
artikel
|
| 9 |
Front-end process simulation
|
Rafferty, C.S
|
|
2000
|
44 |
5 |
p. 863-868
6 p.
|
artikel
|
| 10 |
Index
|
|
|
2000
|
44 |
5 |
p. I-
1 p.
|
artikel
|
| 11 |
Influence of melt convection on the interface during Czochralski crystal growth
|
Miller, W.
|
|
2000
|
44 |
5 |
p. 825-830
6 p.
|
artikel
|
| 12 |
Integration of quantum transport models in classical device simulators
|
Racec, P.N.
|
|
2000
|
44 |
5 |
p. 881-886
6 p.
|
artikel
|
| 13 |
Nonlinear optical characterization of the surface of silicon wafers: In-situ detection of external stress
|
Reif, J
|
|
2000
|
44 |
5 |
p. 809-813
5 p.
|
artikel
|
| 14 |
Optimization of 0.18 μm CMOS devices by coupled process and device simulation
|
Burenkov, A.
|
|
2000
|
44 |
5 |
p. 767-774
8 p.
|
artikel
|
| 15 |
Overview of status and challenges of system testing on chip with embedded DRAMS
|
Falter, T
|
|
2000
|
44 |
5 |
p. 761-766
6 p.
|
artikel
|
| 16 |
Polymeric electrodes
|
Appel, G
|
|
2000
|
44 |
5 |
p. 855-861
7 p.
|
artikel
|
| 17 |
Reliability of built in aluminum interconnection with low-ε dielectric based on porous anodic alumina
|
Lazarouk, S
|
|
2000
|
44 |
5 |
p. 815-818
4 p.
|
artikel
|
| 18 |
Silicon-on-insulator: materials aspects and applications
|
Plößl, Andreas
|
|
2000
|
44 |
5 |
p. 775-782
8 p.
|
artikel
|
| 19 |
Tailoring dopant diffusion for advanced SiGe:C heterojunction bipolar transistors
|
Rücker, H.
|
|
2000
|
44 |
5 |
p. 783-789
7 p.
|
artikel
|
| 20 |
Two- and three-dimensional numerical modeling of copper electroplating for advanced ULSI metallization
|
Ritter, G.
|
|
2000
|
44 |
5 |
p. 797-807
11 p.
|
artikel
|
Tijdschrift beschrijving