| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low-complexity 62-GHz f T SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
|
Grahn, J.V
|
|
2000
|
44 |
3 |
p. 549-554
6 p.
|
artikel
|
| 2 |
An explicit surface-potential-based MOSFET model for circuit simulation
|
van Langevelde, Ronald
|
|
2000
|
44 |
3 |
p. 409-418
10 p.
|
artikel
|
| 3 |
A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices
|
Chyau, Chwan-Gwo
|
|
2000
|
44 |
3 |
p. 487-499
13 p.
|
artikel
|
| 4 |
A poly(acetoxy-p-phenylene vinylene) based diode with a soft breakdown behaviour
|
de Lima, J.R
|
|
2000
|
44 |
3 |
p. 565-569
5 p.
|
artikel
|
| 5 |
A semi-empirical model for the AlGaAs/GaAs HBT long-term current instability
|
Zhou, W.
|
|
2000
|
44 |
3 |
p. 541-548
8 p.
|
artikel
|
| 6 |
Cascoded LVTSCR with tunable holding voltage for ESD protection in bulk CMOS technology without latchup danger
|
Ker, Ming-Dou
|
|
2000
|
44 |
3 |
p. 425-445
21 p.
|
artikel
|
| 7 |
Concentric ring contacts used for the determination of contact resistances
|
Rechid, J.
|
|
2000
|
44 |
3 |
p. 451-455
5 p.
|
artikel
|
| 8 |
Dynamic avalanche in Si power diodes and impact ionization at the nn+ junction
|
Domeij, Martin
|
|
2000
|
44 |
3 |
p. 477-485
9 p.
|
artikel
|
| 9 |
Effective density-of-states approach to QM correction in MOS structures
|
Ma, Yutao
|
|
2000
|
44 |
3 |
p. 401-407
7 p.
|
artikel
|
| 10 |
Effect of nonlinear physical phenomena on the photovoltaic effect in silicon p+–n–n+ solar cells
|
Mnatsakanov, T.T
|
|
2000
|
44 |
3 |
p. 383-392
10 p.
|
artikel
|
| 11 |
Effect of oxygen plasma on the electrical characteristics of GaAs MESFETs
|
Kumar, Vipan
|
|
2000
|
44 |
3 |
p. 447-450
4 p.
|
artikel
|
| 12 |
Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
|
Xu, Jing-Ping
|
|
2000
|
44 |
3 |
p. 527-534
8 p.
|
artikel
|
| 13 |
High concentration impurity diffusion profile model
|
Suzuki, Kunihiro
|
|
2000
|
44 |
3 |
p. 457-463
7 p.
|
artikel
|
| 14 |
High gain gate/body tied NMOSFET photo-detector on SOI substrate for low power applications
|
Zhang, Weiquan
|
|
2000
|
44 |
3 |
p. 535-540
6 p.
|
artikel
|
| 15 |
Improvement of sheet resistance and gate oxide integrity using phosphorus ion implantation in tungsten polycide gate
|
Cho, Won-ju
|
|
2000
|
44 |
3 |
p. 393-399
7 p.
|
artikel
|
| 16 |
On the determination of interface state density in n-InP Schottky structures by current–voltage measurements
|
Ahaitouf, A
|
|
2000
|
44 |
3 |
p. 515-520
6 p.
|
artikel
|
| 17 |
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide
|
DeVittorio, M.
|
|
2000
|
44 |
3 |
p. 465-470
6 p.
|
artikel
|
| 18 |
Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H–SiC and Si
|
Persson, C.
|
|
2000
|
44 |
3 |
p. 471-476
6 p.
|
artikel
|
| 19 |
Pseudopotential calculations of electronic properties of Ga1−x In x N alloys with zinc-blende structure
|
Kassali, K.
|
|
2000
|
44 |
3 |
p. 501-507
7 p.
|
artikel
|
| 20 |
Rectifying properties of solid C60/n-GaN, C70/n-GaN and C70/p-GaN heterojunctions
|
Sun, W.H.
|
|
2000
|
44 |
3 |
p. 555-558
4 p.
|
artikel
|
| 21 |
Self-sustained acoustoelectric and photoelectric oscillations in semiconductor–piezoelectric structures
|
Vyun, Vladimir
|
|
2000
|
44 |
3 |
p. 419-424
6 p.
|
artikel
|
| 22 |
Soft breakdown in very thin Ta2O5 gate dielectric layers
|
Houssa, M
|
|
2000
|
44 |
3 |
p. 521-525
5 p.
|
artikel
|
| 23 |
Surface potential mapping: comparison of the vibrating capacitor and the SPV method
|
Mizsei, János
|
|
2000
|
44 |
3 |
p. 509-513
5 p.
|
artikel
|
| 24 |
The effect of carbon content on the minority carrier lifetime in lattice-matched p +-Si/p-SiGeC/n-Si/n +-Si diodes
|
Shivaram, Ramakrishna
|
|
2000
|
44 |
3 |
p. 559-563
5 p.
|
artikel
|
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