A low-complexity 62-GHz f T SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Titel:
A low-complexity 62-GHz f T SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
Auteur:
Grahn, J.V Fosshaug, H Jargelius, M Jönsson, P Linder, M Malm, B.G Mohadjeri, B Pejnefors, J Radamson, H.H Sandén, M Wang, Y.-B Landgren, G Östling, M