| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical expression for ion-implanted impurity concentration profiles
|
Suzuki, Kunihiro
|
|
2000
|
44 |
12 |
p. 2253-2257
5 p.
|
artikel
|
| 2 |
An analysis of process fluctuation induced propagation delay variation using analytical model
|
Shigyo, Naoyuki
|
|
2000
|
44 |
12 |
p. 2183-2191
9 p.
|
artikel
|
| 3 |
An analytical model for punch-through limited breakdown voltage of planar junction with multiple floating field limiting rings
|
Bae, Dong-Gun
|
|
2000
|
44 |
12 |
p. 2109-2116
8 p.
|
artikel
|
| 4 |
A new way for measuring the apparent band gap narrowing in bipolar transistors
|
Haiyan, Jin
|
|
2000
|
44 |
12 |
p. 2233-2237
5 p.
|
artikel
|
| 5 |
A silicon quantum wire transistor with one-dimensional subband effects
|
Je, Minkyu
|
|
2000
|
44 |
12 |
p. 2207-2212
6 p.
|
artikel
|
| 6 |
Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formed by solid phase reaction
|
Zhu, Shiyang
|
|
2000
|
44 |
12 |
p. 2217-2223
7 p.
|
artikel
|
| 7 |
Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells?
|
Berg, Jonas
|
|
2000
|
44 |
12 |
p. 2247-2252
6 p.
|
artikel
|
| 8 |
Design optimization of stacked layer dielectrics for minimum gate leakage currents
|
Zhang, J
|
|
2000
|
44 |
12 |
p. 2165-2170
6 p.
|
artikel
|
| 9 |
Effects of distance between wells on band structure and characteristics of InGaAs/InGaAsP strain-compensated multiple quantum well lasers
|
Ma, Chunsheng
|
|
2000
|
44 |
12 |
p. 2123-2129
7 p.
|
artikel
|
| 10 |
Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy
|
Yun, F
|
|
2000
|
44 |
12 |
p. 2225-2232
8 p.
|
artikel
|
| 11 |
Equivalent junction transformation: a semi-empirical analytical method for predicting the breakdown characteristics of cylindrical- and spherical-abrupt P–N junctions
|
He, Jin
|
|
2000
|
44 |
12 |
p. 2171-2176
6 p.
|
artikel
|
| 12 |
Estimation for the capture cross-sections of surface state on p-Si surface by photovoltaic method
|
Yan, Yongmei
|
|
2000
|
44 |
12 |
p. 2213-2216
4 p.
|
artikel
|
| 13 |
Index
|
|
|
2000
|
44 |
12 |
p. VI-IX
nvt p.
|
artikel
|
| 14 |
Index
|
|
|
2000
|
44 |
12 |
p. I-V
nvt p.
|
artikel
|
| 15 |
Modeling of the body current in a Bi-MOS hybrid-mode environment
|
Yeo, K.S
|
|
2000
|
44 |
12 |
p. 2199-2205
7 p.
|
artikel
|
| 16 |
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
|
Dang, G
|
|
2000
|
44 |
12 |
p. 2097-2100
4 p.
|
artikel
|
| 17 |
Optical response of planar Mo/n-Si/Mo structures with long neutral region and Schottky barriers at both ends
|
Takano, H
|
|
2000
|
44 |
12 |
p. 2161-2164
4 p.
|
artikel
|
| 18 |
Optimization of vertical 600 and 1500 V SOI-ESTs with low on-state voltages
|
Steck, B
|
|
2000
|
44 |
12 |
p. 2131-2138
8 p.
|
artikel
|
| 19 |
Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
|
LaRoche, J.R.
|
|
2000
|
44 |
12 |
p. 2117-2122
6 p.
|
artikel
|
| 20 |
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
|
Tang, H.
|
|
2000
|
44 |
12 |
p. 2177-2182
6 p.
|
artikel
|
| 21 |
Self-aligned silicon-on-insulator nano flash memory device
|
Tang, X.
|
|
2000
|
44 |
12 |
p. 2259-2264
6 p.
|
artikel
|
| 22 |
Simulation study of high injection effects and parasitic barrier formation in SiGe HBTs operating at high current densities
|
Mushini, P
|
|
2000
|
44 |
12 |
p. 2239-2246
8 p.
|
artikel
|
| 23 |
Simulation study of the DC and AC characteristics of an a-Si:H(n)/GaAs(p)/GaAs(n) heterojunction bipolar transistor
|
Della Corte, Francesco G
|
|
2000
|
44 |
12 |
p. 2265-2271
7 p.
|
artikel
|
| 24 |
Temperature-dependence of steady-state characteristics of SCR-type ESD protection circuits
|
Jang, Sheng-Lyang
|
|
2000
|
44 |
12 |
p. 2139-2146
8 p.
|
artikel
|
| 25 |
The effect of hydrostatic pressure on the electronic and optical properties of InP
|
Bouarissa, N
|
|
2000
|
44 |
12 |
p. 2193-2198
6 p.
|
artikel
|
| 26 |
The effect of N2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics
|
Trivedi, V.P
|
|
2000
|
44 |
12 |
p. 2101-2108
8 p.
|
artikel
|
| 27 |
The time–frequency analysis approach of electric noise based on the wavelet transform
|
Dai, Yisong
|
|
2000
|
44 |
12 |
p. 2147-2153
7 p.
|
artikel
|
| 28 |
Turn-off operation of a MOS-gate 2.6 kV 4H–SiC gate turn-off thyristor
|
Ivanov, Pavel A
|
|
2000
|
44 |
12 |
p. 2155-2159
5 p.
|
artikel
|
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