| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology
|
Zhang, Gang
|
|
2000
|
44 |
11 |
p. 1949-1954
6 p.
|
artikel
|
| 2 |
An empirical model for leakage current in poly-silicon thin film transistor
|
Siddiqui, M.J.
|
|
2000
|
44 |
11 |
p. 2015-2019
5 p.
|
artikel
|
| 3 |
An improved substrate current model for deep submicron MOSFETs
|
Li, Wei
|
|
2000
|
44 |
11 |
p. 1985-1988
4 p.
|
artikel
|
| 4 |
Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor
|
Yu, Kuo-Hui
|
|
2000
|
44 |
11 |
p. 2069-2075
7 p.
|
artikel
|
| 5 |
Characterization and modeling of fast programming bits in flash EEPROM
|
Nkansah, F
|
|
2000
|
44 |
11 |
p. 1887-1897
11 p.
|
artikel
|
| 6 |
Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy
|
Yoon, S.F
|
|
2000
|
44 |
11 |
p. 1909-1916
8 p.
|
artikel
|
| 7 |
Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures
|
Wei, Jianlin
|
|
2000
|
44 |
11 |
p. 2021-2025
5 p.
|
artikel
|
| 8 |
Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors
|
Dimitriadis, C.A
|
|
2000
|
44 |
11 |
p. 2045-2051
7 p.
|
artikel
|
| 9 |
Effect of post-implantation anneal on the electrical characteristics of Ni 4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
|
Morrison, D.J
|
|
2000
|
44 |
11 |
p. 1879-1885
7 p.
|
artikel
|
| 10 |
Effects of proton implantation on electrical and recombination properties of n-GaN
|
Polyakov, A.Y
|
|
2000
|
44 |
11 |
p. 1971-1983
13 p.
|
artikel
|
| 11 |
Evaluation of surface generation velocity of sidewall oxide interfaces formed by dry etching for shallow trench isolation
|
Riley, L.S
|
|
2000
|
44 |
11 |
p. 2093-2095
3 p.
|
artikel
|
| 12 |
Full multiband simulation of quantum electron transport in resonant tunneling devices
|
Ogawa, M.
|
|
2000
|
44 |
11 |
p. 1939-1947
9 p.
|
artikel
|
| 13 |
High performance submicron bottom gate TFTs with self aligned Ti-silicide interpoly contact and poly-channel oxidation for high-density SRAM
|
Yaung, D.N
|
|
2000
|
44 |
11 |
p. 1997-2000
4 p.
|
artikel
|
| 14 |
Hot-carrier reliability of ultra-thin gate oxide CMOS
|
Momose, Hisayo Sasaki
|
|
2000
|
44 |
11 |
p. 2035-2044
10 p.
|
artikel
|
| 15 |
Improvement of contact resistances on plasma-exposed silicon carbide
|
Cheung, R
|
|
2000
|
44 |
11 |
p. 2081-2083
3 p.
|
artikel
|
| 16 |
Investigation of the optical spot position on the performance of metal–semiconductor–metal structures: novel application
|
Safwat, Amr M.E
|
|
2000
|
44 |
11 |
p. 2077-2080
4 p.
|
artikel
|
| 17 |
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
|
Polyakov, A.Y
|
|
2000
|
44 |
11 |
p. 1955-1960
6 p.
|
artikel
|
| 18 |
Modeling of thermal noise in short-channel MOSFETs at saturation
|
Park, Chan Hyeong
|
|
2000
|
44 |
11 |
p. 2053-2057
5 p.
|
artikel
|
| 19 |
Modeling short channel effect on high-k and stacked-gate MOSFETs
|
Zhang, J.
|
|
2000
|
44 |
11 |
p. 2089-2091
3 p.
|
artikel
|
| 20 |
Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology
|
Park, Jae-Woo
|
|
2000
|
44 |
11 |
p. 2059-2067
9 p.
|
artikel
|
| 21 |
Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT
|
Azzopardi, S
|
|
2000
|
44 |
11 |
p. 1899-1908
10 p.
|
artikel
|
| 22 |
On the degeneracy of quantized inversion layer in MOS structures
|
Ma, Yutao
|
|
2000
|
44 |
11 |
p. 1925-1929
5 p.
|
artikel
|
| 23 |
Perovskite-type NiSnO3 used as the ethanol sensitive material
|
Yude, Wang
|
|
2000
|
44 |
11 |
p. 2009-2014
6 p.
|
artikel
|
| 24 |
Quality optimization of liquid phase deposition SiO2 films on gallium arsenide
|
Houng, M.P
|
|
2000
|
44 |
11 |
p. 1917-1923
7 p.
|
artikel
|
| 25 |
Radiation and electrical stress-induced hole trap-assisted tunneling currents in ultrathin gate oxides
|
Ang, Chew-Hoe
|
|
2000
|
44 |
11 |
p. 2001-2007
7 p.
|
artikel
|
| 26 |
Random line selected charge accumulation readout structure for random access infrared imager application
|
Horng, Gwo-Ji
|
|
2000
|
44 |
11 |
p. 2027-2033
7 p.
|
artikel
|
| 27 |
Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs
|
Nicolett, A.S
|
|
2000
|
44 |
11 |
p. 1961-1969
9 p.
|
artikel
|
| 28 |
The influence of different isolation processes on the performance of AlGaAs/GaAs heterojunction bipolar transistors for power applications
|
Yan, Bei Ping
|
|
2000
|
44 |
11 |
p. 1989-1995
7 p.
|
artikel
|
| 29 |
Threshold voltage control for PMOSFETs using an undoped epitaxial Si channel and a p+-Si x Ge1−x gate
|
Hellberg, P.-E
|
|
2000
|
44 |
11 |
p. 2085-2088
4 p.
|
artikel
|
| 30 |
1 V SOI NMOSFET with suppressed floating body effects
|
Ren, John Z
|
|
2000
|
44 |
11 |
p. 1931-1937
7 p.
|
artikel
|
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