| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analytical turn-off current model for type of conductivity modulation power MOSFETS with extracted excess carrier
|
Li, Zhaoji
|
|
2000
|
44 |
1 |
p. 1-9
9 p.
|
artikel
|
| 2 |
An analytical MOSFET breakdown model including self-heating effect
|
Ho, C.S.
|
|
2000
|
44 |
1 |
p. 125-131
7 p.
|
artikel
|
| 3 |
Band gap narrowing effect in Be-doped Al x Ga1−x As studied by photoluminescence spectroscopy
|
Zheng, H.Q
|
|
2000
|
44 |
1 |
p. 37-40
4 p.
|
artikel
|
| 4 |
Bipolar cathode transferred-electron device for millimeter-wave generation
|
Dalle, C
|
|
2000
|
44 |
1 |
p. 79-84
6 p.
|
artikel
|
| 5 |
Current filamentation in bipolar power devices during dynamic avalanche breakdown
|
Oetjen, J
|
|
2000
|
44 |
1 |
p. 117-123
7 p.
|
artikel
|
| 6 |
Current instability in mercuric iodide devices
|
Ponpon, J.P
|
|
2000
|
44 |
1 |
p. 29-35
7 p.
|
artikel
|
| 7 |
Current saturation control in silicon emitter switched thyristors
|
Sawant, Shankar
|
|
2000
|
44 |
1 |
p. 133-142
10 p.
|
artikel
|
| 8 |
Electrical transport at a non-ideal CrSi2-Si junction
|
Aniltürk, Ö.S
|
|
2000
|
44 |
1 |
p. 41-48
8 p.
|
artikel
|
| 9 |
Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation
|
Hossin, M.
|
|
2000
|
44 |
1 |
p. 85-94
10 p.
|
artikel
|
| 10 |
High characteristic temperature (T o=322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers
|
Kim, T.G
|
|
2000
|
44 |
1 |
p. 185-187
3 p.
|
artikel
|
| 11 |
Hole energy levels in p-type δ-doped Si quantum wells
|
Gaggero-Sager, L.M
|
|
2000
|
44 |
1 |
p. 175-183
9 p.
|
artikel
|
| 12 |
Hot carrier-induced photon emission in 6H and 4H–SiC MOSFETs
|
Bano, E
|
|
2000
|
44 |
1 |
p. 63-69
7 p.
|
artikel
|
| 13 |
Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
|
Borgarino, M
|
|
2000
|
44 |
1 |
p. 59-62
4 p.
|
artikel
|
| 14 |
Mesh related problems in device simulation:
|
Shigyo, Naoyuki
|
|
2000
|
44 |
1 |
p. 11-16
6 p.
|
artikel
|
| 15 |
Moment equations for electrons in semiconductors: comparison of spherical harmonics and full moments
|
Liotta, S.F.
|
|
2000
|
44 |
1 |
p. 95-103
9 p.
|
artikel
|
| 16 |
Nonalloyed GaAs metal-semiconductor field effect transistor
|
Lee, Ching-Ting
|
|
2000
|
44 |
1 |
p. 143-146
4 p.
|
artikel
|
| 17 |
On the leakage current of present-day manufactured semiconductor junctions
|
Obreja, Vasile V.N.
|
|
2000
|
44 |
1 |
p. 49-57
9 p.
|
artikel
|
| 18 |
p-Ohmic contact resistance for GaAs(C)/GaN(Mg)
|
Dang, G.T
|
|
2000
|
44 |
1 |
p. 105-109
5 p.
|
artikel
|
| 19 |
Semiconductor lasers for planar integrated optoelectronics
|
Sargent, Edward H.
|
|
2000
|
44 |
1 |
p. 147-173
27 p.
|
artikel
|
| 20 |
Simulation of novel complementary bipolar inverters for low-voltage high-speed ULSI
|
Bubennikov, Alexander N.
|
|
2000
|
44 |
1 |
p. 71-77
7 p.
|
artikel
|
| 21 |
Switching in coplanar amorphous hydrogenated silicon devices
|
Avila, A
|
|
2000
|
44 |
1 |
p. 17-27
11 p.
|
artikel
|
| 22 |
The influence of post annealing on oxide charge-to-breakdown in tungsten polycide gate technology
|
Lee, Byunghak
|
|
2000
|
44 |
1 |
p. 189-192
4 p.
|
artikel
|
| 23 |
The negatively charged insulator-semiconductor structure: concepts, technological considerations and applications
|
König, D
|
|
2000
|
44 |
1 |
p. 111-116
6 p.
|
artikel
|
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