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Journal description
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Details for article 22 of 23 found articles
| Title: |
The influence of post annealing on oxide charge-to-breakdown in tungsten polycide gate technology |
| Author: |
Lee, Byunghak Kim, Sangcheol Kim, Jongoh Om, Jaechul |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 44 (2000) nr. 1 pages 4 p. |
| Year: |
2000 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 22 of 23 found articles
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