| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A charge-control HEMT model incorporating deep level effects
|
Singh, Ranjit
|
|
1999
|
43 |
3 |
p. 473-480
8 p.
|
artikel
|
| 2 |
A closed form expression for punch-through limited breakdown voltage of parallel-plane junction 1 This work was supported by the Ministry of Science and Technology (MOST) of Korea under Grant No. 97-N5-01-01-A-02. 1
|
Bae, Dong-Gun
|
|
1999
|
43 |
3 |
p. 503-504
2 p.
|
artikel
|
| 3 |
A compact model for the N-well resistor
|
Parikh, C.D
|
|
1999
|
43 |
3 |
p. 683-685
3 p.
|
artikel
|
| 4 |
A simple analytical charge control model for double delta doped HEMTs
|
Nawaz, M.
|
|
1999
|
43 |
3 |
p. 687-690
4 p.
|
artikel
|
| 5 |
A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors
|
Koukab, A.
|
|
1999
|
43 |
3 |
p. 641-644
4 p.
|
artikel
|
| 6 |
Cell geometry optimisation of 4H–SiC power UMOSFETs by electrothermal simulation
|
Wright, N.G.
|
|
1999
|
43 |
3 |
p. 515-520
6 p.
|
artikel
|
| 7 |
Comments on ``Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes''
|
Vandamme, L.K.J.
|
|
1999
|
43 |
3 |
p. 691-692
2 p.
|
artikel
|
| 8 |
Cryogenic operation of emitter switched thyristor structures
|
Flores, D.
|
|
1999
|
43 |
3 |
p. 633-640
8 p.
|
artikel
|
| 9 |
D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs
|
Hwang, Hann-Ping
|
|
1999
|
43 |
3 |
p. 463-468
6 p.
|
artikel
|
| 10 |
D.C. characteristic of MESFETs at High Temperatures
|
Won, Chang-Sub
|
|
1999
|
43 |
3 |
p. 537-542
6 p.
|
artikel
|
| 11 |
Derivation of the unified charge control model and parameter extraction procedure
|
Cunha, Ana Isabela Araújo
|
|
1999
|
43 |
3 |
p. 481-485
5 p.
|
artikel
|
| 12 |
Effect of chalcogenide elements on the electrical characteristics of GaAs MIS structures
|
Gaman, V.I.
|
|
1999
|
43 |
3 |
p. 583-588
6 p.
|
artikel
|
| 13 |
Effect of material parameters on the quantum efficiency of GaInAsSb detectors
|
Tian, Yuan
|
|
1999
|
43 |
3 |
p. 625-631
7 p.
|
artikel
|
| 14 |
Effects of electric field concentration on resonant tunneling of asymmetric oxide-nitride-oxide films
|
Matsuo, Naoto
|
|
1999
|
43 |
3 |
p. 653-657
5 p.
|
artikel
|
| 15 |
Electrical and optical changes in the near surface of reactively ion etched n-GaN
|
Chen, J.Y
|
|
1999
|
43 |
3 |
p. 649-652
4 p.
|
artikel
|
| 16 |
Electrical characterization of a-SiO x :H produced by plasma immersion ion implantation
|
Chen, S.-M.
|
|
1999
|
43 |
3 |
p. 599-607
9 p.
|
artikel
|
| 17 |
Electron conduction in low temperature grown GaAs
|
Khirouni, K.
|
|
1999
|
43 |
3 |
p. 589-597
9 p.
|
artikel
|
| 18 |
Erratum
|
|
|
1999
|
43 |
3 |
p. 693-696
4 p.
|
artikel
|
| 19 |
Experimental study of the spatially-modulated light detector
|
Coppée, Daniël
|
|
1999
|
43 |
3 |
p. 609-613
5 p.
|
artikel
|
| 20 |
Fabrication and characterization of high-performance planar InGaAs/InP separate absorption, grading and multiplication avalanche photodetectors
|
Ho, Wen-Jeng
|
|
1999
|
43 |
3 |
p. 659-663
5 p.
|
artikel
|
| 21 |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
|
Yeh, Kuo-Lang
|
|
1999
|
43 |
3 |
p. 671-676
6 p.
|
artikel
|
| 22 |
Interface state density in n-MOSFETs with Si-implanted gate oxide measured by subthreshold slope analysis
|
Kameda, Etsumasa
|
|
1999
|
43 |
3 |
p. 565-573
9 p.
|
artikel
|
| 23 |
Metal-to-metal antifuse with amorphous Ti-rich barium titanate film and silicon oxide film
|
Lee, Jae Sung
|
|
1999
|
43 |
3 |
p. 469-472
4 p.
|
artikel
|
| 24 |
Numerical simulation of the pseudo-MOSFET characterization technique
|
Munteanu, D.
|
|
1999
|
43 |
3 |
p. 547-554
8 p.
|
artikel
|
| 25 |
Oscillations during inductive turn-off in rectifiers
|
Mayaram, K
|
|
1999
|
43 |
3 |
p. 677-681
5 p.
|
artikel
|
| 26 |
p–n junctions formed by BF2 ion implantation and laser annealing
|
Tsukamoto, Hironori
|
|
1999
|
43 |
3 |
p. 487-492
6 p.
|
artikel
|
| 27 |
Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots
|
Macdonald, D
|
|
1999
|
43 |
3 |
p. 575-581
7 p.
|
artikel
|
| 28 |
Single-gate 0.15 and 0.12 μm CMOS with Co salicide technology
|
Yoshitomi, Takashi
|
|
1999
|
43 |
3 |
p. 543-546
4 p.
|
artikel
|
| 29 |
Study of InGaP/GaAs/InGaP MSM photodetectors using indium–tin–oxide as transparent and antireflection Schottky electrode
|
Tsai, Chang-Da
|
|
1999
|
43 |
3 |
p. 665-670
6 p.
|
artikel
|
| 30 |
Study of the current–voltage characteristics in MOS capacitors with Si-implanted gate oxide
|
Kameda, Etsumasa
|
|
1999
|
43 |
3 |
p. 555-563
9 p.
|
artikel
|
| 31 |
Temperature characteristics of the device constant (n) of a light emitting diode
|
Acharya, Y.B
|
|
1999
|
43 |
3 |
p. 645-647
3 p.
|
artikel
|
| 32 |
The doping of GaN with Mg diffusion
|
Pan, C.J.
|
|
1999
|
43 |
3 |
p. 621-623
3 p.
|
artikel
|
| 33 |
The effect of hydrogen passivation on electrical characteristics of double-polysilicon self-aligned bipolar transistors
|
Sandén, M
|
|
1999
|
43 |
3 |
p. 615-620
6 p.
|
artikel
|
| 34 |
The effect of thermal treatment on the characteristic parameters of Ni/-, Ti/- and NiTi alloy/n-GaAs Schottky diodes
|
Ayyıldız, Enise
|
|
1999
|
43 |
3 |
p. 521-527
7 p.
|
artikel
|
| 35 |
The realization of scattering matrix approach to transport modeling through spherical harmonics
|
Han, Zhiyi
|
|
1999
|
43 |
3 |
p. 493-501
9 p.
|
artikel
|
| 36 |
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
|
Moers, J
|
|
1999
|
43 |
3 |
p. 529-535
7 p.
|
artikel
|
| 37 |
Waves of switching in thyristor-like structures
|
Gribnikov, Z.S.
|
|
1999
|
43 |
3 |
p. 505-513
9 p.
|
artikel
|
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