| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active equivalent network for states at the Al/InPO4 interface
|
Al-Refaie, S.N.
|
|
1999
|
43 |
2 |
p. 325-334
10 p.
|
artikel
|
| 2 |
Analysis and optimization of the planar 6H-SiC ACCUFET
|
Shenoy, Praveen M.
|
|
1999
|
43 |
2 |
p. 213-220
8 p.
|
artikel
|
| 3 |
Analytical expressions of base transit time for SiGe HBTs with retrograde base profiles
|
Kwok, K.H.
|
|
1999
|
43 |
2 |
p. 275-283
9 p.
|
artikel
|
| 4 |
A simple analytical model of thermal oxidation of silicon
|
Rinaldi, N.F.
|
|
1999
|
43 |
2 |
p. 409-411
3 p.
|
artikel
|
| 5 |
Concepts of light emission from a silicon MOS tunnel emitter Auger transistor
|
Grekhov, I.V.
|
|
1999
|
43 |
2 |
p. 417-426
10 p.
|
artikel
|
| 6 |
Coupling between the Liouville equation and a classical Monte Carlo solver for the simulation of electron transport in resonant tunneling diodes
|
Martı́n, F.
|
|
1999
|
43 |
2 |
p. 315-323
9 p.
|
artikel
|
| 7 |
Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistors
|
Cheng, Shiou-Ying
|
|
1999
|
43 |
2 |
p. 297-304
8 p.
|
artikel
|
| 8 |
Design of dynamic-floating-gate technique for output ESD protection in deep-submicron CMOS technology
|
Chang, Hun-Hsien
|
|
1999
|
43 |
2 |
p. 375-393
19 p.
|
artikel
|
| 9 |
Effect of multiple scans and granular defects on excimer laser annealed polysilicon TFTs
|
Marmorstein, Aaron M
|
|
1999
|
43 |
2 |
p. 305-313
9 p.
|
artikel
|
| 10 |
Effect of surface treatment by KOH solution on ohmic contact formation of p-type GaN
|
Lee, Jong-Lam
|
|
1999
|
43 |
2 |
p. 435-438
4 p.
|
artikel
|
| 11 |
Effects of misfit dislocation interaction and 90°-type misfit dislocations on strain relaxation behavior in strained epilayer
|
Jin, Z
|
|
1999
|
43 |
2 |
p. 355-358
4 p.
|
artikel
|
| 12 |
Electrical behaviour of metal/tetrahedral amorphous carbon/metal structure
|
Liu, E.
|
|
1999
|
43 |
2 |
p. 427-434
8 p.
|
artikel
|
| 13 |
Electrical properties of Cr/Si(p) structures
|
Benouattas, N
|
|
1999
|
43 |
2 |
p. 439-446
8 p.
|
artikel
|
| 14 |
Empirical pseudopotential band structure of In0.53Ga0.47As and In0.52Al0.48As
|
Dittrich, R.
|
|
1999
|
43 |
2 |
p. 403-407
5 p.
|
artikel
|
| 15 |
Enhancing the maximum controllable current density of the accumulation channel driven bipolar transistor
|
Thapar, Naresh
|
|
1999
|
43 |
2 |
p. 395-402
8 p.
|
artikel
|
| 16 |
Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations
|
Bonani, F.
|
|
1999
|
43 |
2 |
p. 285-295
11 p.
|
artikel
|
| 17 |
Measurement of carrier generation lifetime in SOI devices
|
Shin, Hyungcheol
|
|
1999
|
43 |
2 |
p. 349-353
5 p.
|
artikel
|
| 18 |
Microwave characteristics of BARITT diodes based on silicon carbide
|
Aroutiounian, V.M.
|
|
1999
|
43 |
2 |
p. 343-348
6 p.
|
artikel
|
| 19 |
Modelling of collector signal delay effects in bipolar transistors
|
Rinaldi, NiccolòF.
|
|
1999
|
43 |
2 |
p. 359-365
7 p.
|
artikel
|
| 20 |
Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems
|
Igic, P.M.
|
|
1999
|
43 |
2 |
p. 255-261
7 p.
|
artikel
|
| 21 |
Observation of dopant–vacancy defects by low-frequency noise measurements in heavily doped n+/p+ silicon diodes
|
Haddab, Y
|
|
1999
|
43 |
2 |
p. 413-416
4 p.
|
artikel
|
| 22 |
On the degradation kinetics of thin oxide layers
|
Scarpa, A.
|
|
1999
|
43 |
2 |
p. 221-227
7 p.
|
artikel
|
| 23 |
On the transit time of polysilicon emitter transistors
|
Basu, Sukla
|
|
1999
|
43 |
2 |
p. 189-197
9 p.
|
artikel
|
| 24 |
Scaling of gate length in ultra-short channel heterostructure field effect transistors
|
Han, Jaeheon
|
|
1999
|
43 |
2 |
p. 335-341
7 p.
|
artikel
|
| 25 |
Simulation, fabrication and characterization of a 3.3 V flash ZE2PROM array implemented in a 0.8 μm CMOS process
|
Ranaweera, J
|
|
1999
|
43 |
2 |
p. 263-273
11 p.
|
artikel
|
| 26 |
Simulation of silicon carbide power MOSFETs at high temperature
|
Shams, S.F
|
|
1999
|
43 |
2 |
p. 367-374
8 p.
|
artikel
|
| 27 |
Soft recovery of power diodes by means of field controlled injection
|
Kaschani, K.T.
|
|
1999
|
43 |
2 |
p. 245-254
10 p.
|
artikel
|
| 28 |
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
|
Raghunathan, R.
|
|
1999
|
43 |
2 |
p. 199-211
13 p.
|
artikel
|
| 29 |
The effect of mode guiding in edge emitting electroluminescent GaInAsP/InP diodes
|
Starosta, K.
|
|
1999
|
43 |
2 |
p. 447-455
9 p.
|
artikel
|
| 30 |
Tunnel-fluctuation model of the MIS admittance
|
Bormontov, E.N.
|
|
1999
|
43 |
2 |
p. 177-187
11 p.
|
artikel
|
| 31 |
Two-dimensional simulation for the GaAs V-groove gate MESFET's
|
Wang, Y.J.
|
|
1999
|
43 |
2 |
p. 229-244
16 p.
|
artikel
|
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