| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases
|
Shigyo, Naoyuki
|
|
1999
|
43 |
11 |
p. 2061-2066
6 p.
|
artikel
|
| 2 |
A semi-empirical simulation model for polycrystalline thin film transistors
|
Wright, S.W.
|
|
1999
|
43 |
11 |
p. 2047-2055
9 p.
|
artikel
|
| 3 |
A silicon heterojunction bipolar transistor with an amorphous silicon emitter and a crystalline silicon emitter region
|
Garner, David M.
|
|
1999
|
43 |
11 |
p. 1973-1983
11 p.
|
artikel
|
| 4 |
A simpler method for extracting solar cell parameters using the conductance method
|
Ouennoughi, Z
|
|
1999
|
43 |
11 |
p. 1985-1988
4 p.
|
artikel
|
| 5 |
Characterization of mechanical damage on structural and electrical properties of silicon wafers
|
Choi, Chi-Young
|
|
1999
|
43 |
11 |
p. 2011-2020
10 p.
|
artikel
|
| 6 |
Effect of dogbone geometry on source/drain resistance in narrow-width MOSFETs
|
Scholten, A.J
|
|
1999
|
43 |
11 |
p. 1989-1996
8 p.
|
artikel
|
| 7 |
Effects of high temperature annealing of aluminum at the back of n+-p-p+ silicon solar cells upon their spectral and electrical characteristics
|
Morales-Acevedo, Arturo
|
|
1999
|
43 |
11 |
p. 2075-2079
5 p.
|
artikel
|
| 8 |
Extraction of the oxide charges at the silicon substrate interface in Silicon-On-Insulator MOSFET's
|
Pavanello, Marcelo Antonio
|
|
1999
|
43 |
11 |
p. 2039-2046
8 p.
|
artikel
|
| 9 |
Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ga0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy
|
Yoon, S.F.
|
|
1999
|
43 |
11 |
p. 2097-2101
5 p.
|
artikel
|
| 10 |
First demonstration of the gain switching characteristics of an AlGaAs–GaAs V-grooved quantum wire laser
|
Kim, T.G.
|
|
1999
|
43 |
11 |
p. 2093-2096
4 p.
|
artikel
|
| 11 |
Improvement of oxynitride reliability by two-step N2O nitridation
|
Chang-Liao, Kuei-Shu
|
|
1999
|
43 |
11 |
p. 2057-2060
4 p.
|
artikel
|
| 12 |
Indium tin oxide ohmic contact to highly doped n-GaN
|
Sheu, J.K.
|
|
1999
|
43 |
11 |
p. 2081-2084
4 p.
|
artikel
|
| 13 |
Minimum lateral extension of planar junction terminations
|
Kuhlmann, U.
|
|
1999
|
43 |
11 |
p. 2005-2010
6 p.
|
artikel
|
| 14 |
Native oxide free polycrystalline/single crystal Si interface obtained by in situ cleaning: effects on the electrical performances of polysilicon emitter transistors
|
Puglisi, R.A.
|
|
1999
|
43 |
11 |
p. 2085-2091
7 p.
|
artikel
|
| 15 |
Nitrogen in ultra-thin gate oxides: its profile and functions
|
Chen, Shou Mian
|
|
1999
|
43 |
11 |
p. 1997-2003
7 p.
|
artikel
|
| 16 |
On the subthreshold swing and short channel effects in single and double gate deep submicron SOI-MOSFETs
|
Rauly, E.
|
|
1999
|
43 |
11 |
p. 2033-2037
5 p.
|
artikel
|
| 17 |
Reliability considerations in scaled SONOS nonvolatile memory devices
|
Yang, Yang (Larry)
|
|
1999
|
43 |
11 |
p. 2025-2032
8 p.
|
artikel
|
| 18 |
Trade-off and process consideration for scalable poly-Si buffered LOCOS technology
|
Juang, M.H.
|
|
1999
|
43 |
11 |
p. 2067-2073
7 p.
|
artikel
|
| 19 |
Transparent ZnO ohmic contact on semi-insulating GaAs
|
Palumbo, V.
|
|
1999
|
43 |
11 |
p. 2021-2024
4 p.
|
artikel
|
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