| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
ABNORMAL LASING BEHAVIORS IN THIN p-CLAD InGaAs QUANTUM WELL LASERS
|
Wu, C.H.
|
|
1998
|
42 |
3 |
p. 405-410
6 p.
|
article
|
| 2 |
Analysis and suppression of latch-up during IGBT mode of DG-BRT operation
|
Yamazaki, T
|
|
1998
|
42 |
3 |
p. 393-399
7 p.
|
article
|
| 3 |
An Analytic Model of Planar Junctions with Multiple Floating Field Limiting Rings 1 1 This work was supported in part by the Korea Science and Engineering Foundation, Grant No. 95-0100-05-01-3.
|
Bae, Dong-Gun
|
|
1998
|
42 |
3 |
p. 349-354
6 p.
|
article
|
| 4 |
A new analytical model for the amorphous silicon bulk barrier phototransistor
|
Nascetti, A.
|
|
1998
|
42 |
3 |
p. 339-348
10 p.
|
article
|
| 5 |
AN INVESTIGATION OF THE BLOCKING CHARACTERISTICS OF THE PERMEABLE BASE TRANSISTOR
|
Nilsson, Hans-Erik
|
|
1998
|
42 |
3 |
p. 297-305
9 p.
|
article
|
| 6 |
Application of the proportional difference time analysis to study carrier generation rate in MOS structures
|
Changhua, Tan
|
|
1998
|
42 |
3 |
p. 369-377
9 p.
|
article
|
| 7 |
Boron penetration reduction and FN stress hardness improvement in MOS capacitors by gate oxides rapid-thermal-annealed in N2O
|
Chang-Liao, Kuei-Shu
|
|
1998
|
42 |
3 |
p. 425-427
3 p.
|
article
|
| 8 |
Calculation of the electron beam induced current at the interface of a Schottky contact in the presence of Shockley–Read–Hall recombination
|
Beggah, Y.
|
|
1998
|
42 |
3 |
p. 379-383
5 p.
|
article
|
| 9 |
Characterization of Global Inversion Layer in Thin-Gate-Oxide Deep-Submicron p-MOSFETs 1 1 The project was supported by AFOSR/JSEP under Contract F-49620-94-C-0038.
|
Yu, Bin
|
|
1998
|
42 |
3 |
p. 401-404
4 p.
|
article
|
| 10 |
Comment on “A study on barrier height in Au–Al x Ga1−x N Schottky diodes in the range 0≤x≤0.2” by M. R. H. Khan, H. Nakayama, T. Detchprohm, K. Hiramatsu and N. Sawaki in Solid-State Electronics, 1997 41, 287
|
Mönch, Winfried
|
|
1998
|
42 |
3 |
p. 470-471
2 p.
|
article
|
| 11 |
Current–temperature analysis of DC glow discharge CVD diamond films
|
Borchi, E.
|
|
1998
|
42 |
3 |
p. 429-436
8 p.
|
article
|
| 12 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 317-324
8 p.
|
article
|
| 13 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 325-329
5 p.
|
article
|
| 14 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 453-457
5 p.
|
article
|
| 15 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 363-368
6 p.
|
article
|
| 16 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 307-315
9 p.
|
article
|
| 17 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 467-469
3 p.
|
article
|
| 18 |
Discussion
|
|
|
1998
|
42 |
3 |
p. 463-465
3 p.
|
article
|
| 19 |
EFFECT OF GRAIN BOUNDARY ON MINORITY CARRIER INJECTION INTO POLYSILICON EMITTER
|
Ma, Pingxi
|
|
1998
|
42 |
3 |
p. 355-361
7 p.
|
article
|
| 20 |
Electron tunneling through thin oxide–nitride–oxide films under electric field concentration
|
Matsuo, Naoto
|
|
1998
|
42 |
3 |
p. 441-446
6 p.
|
article
|
| 21 |
Investigation of impact ionization using the balance-equation approach for multivalley nonparabolic semiconductors
|
Cao, J.C.
|
|
1998
|
42 |
3 |
p. 419-423
5 p.
|
article
|
| 22 |
Ionized-Impurity Scattering of Majority Electrons in Silicon
|
Kosina, H.
|
|
1998
|
42 |
3 |
p. 331-338
8 p.
|
article
|
| 23 |
Low-frequency noise characteristics of hot carrier-stressed buried-channel pMOSFETs
|
Jang, Sheng-Lyang
|
|
1998
|
42 |
3 |
p. 411-418
8 p.
|
article
|
| 24 |
NUMERICAL AND EXPERIMENTAL RESULTS FOR GAAS DIODES CONFIRMING THE TWO ROOTS MODEL
|
Khan, W.I.
|
|
1998
|
42 |
3 |
p. 385-388
4 p.
|
article
|
| 25 |
Physics based analytic model for C–V characteristics of GaAs planar Schottky diodes 1 This work was supported by the National Natural Science Foundation of China. 1
|
Tong, Tian
|
|
1998
|
42 |
3 |
p. 458-462
5 p.
|
article
|
| 26 |
Reduction of boron penetration for a p+ polycide gate by using cobalt silicides as a boron diffusion source
|
Juang, M.H
|
|
1998
|
42 |
3 |
p. 389-392
4 p.
|
article
|
| 27 |
Reverse currents of Schottky gates of III–V MESFET/HEMTs: field emission and tunnel currents
|
Takamiya, Saburo
|
|
1998
|
42 |
3 |
p. 447-451
5 p.
|
article
|
| 28 |
Sulphur based surface passivation for high voltage GaAs Schottky diodes
|
Wright, N.G.
|
|
1998
|
42 |
3 |
p. 437-440
4 p.
|
article
|
| 29 |
The drift-diffusion equation revisited
|
Assad, Farzin
|
|
1998
|
42 |
3 |
p. 283-295
13 p.
|
article
|
Journal description